MBRS130LT3G

MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS Features • • • • • • • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) Small Compact Surface Mountable Package with J−Bend Leads Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices SMB CASE 403A MARKING DIAGRAM AYWW 1BL3G G Mechanical Characteristics • Case: Epoxy, Molded • Weight: 100 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band 1BL3 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† MBRS130LT3G SMB (Pb−Free) 2,500 / Tape & Reel SBRS8130LT3G* SMB (Pb−Free) 2,500 / Tape & Reel SBRS8130LT3G−VF01* SMB (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 May, 2017 − Rev. 10 1 Publication Order Number: MBRS130LT3/D MBRS130LT3G, SBRS8130LT3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current TL = 120°C TL = 110°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A 1.0 2.0 A 40 Operating Junction Temperature TJ −65 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead YJL Thermal Resistance, Junction−to−Ambient (TA = 25°C, Min Pad, 1 oz copper) Junction−to−Ambient (TA = 25°C, 1” Pad, 1 oz copper) RqJA Value Unit °C/W 12 °C/W 228.8 71.3 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR Value Unit V 0.395 0.445 mA 1.0 10 10 TJ = 100°C 1 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. 10 TJ = 100°C 1 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 0.7 IR, IREVERSE CURRENT (mA) IR, IREVERSE CURRENT (mA) MBRS130LT3G, SBRS8130LT3G 100 10 TJ = 100°C 1.0 25°C 0.1 0.01 0.001 100 10 TJ = 100°C 1.0 25°C 0.1 0.01 0.001 0 3 6 9 12 15 18 21 24 27 0 30 3 6 VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE POWER DISSIPATION (W) DC 1.4 SQUARE WAVE 1 0.8 0.6 0.4 0.2 105 110 115 120 125 130 TC, CASE TEMPERATURE (°C) 24 27 30 0.7 0.6 0.5 SQUARE 0.4 0.3 DC 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Typical Power Dissipation NOTE: TYPICAL CAPACITANCE AT 0 V = 290 pF 350 300 250 200 150 100 50 0 4 21 0.8 400 0 18 0.9 Figure 5. Current Derating (Case) C, CAPACITANCE (pF) IF(AV), AVERAGE FORWARD CURRENT (A) 1.8 0 100 15 Figure 4. Typical Maximum Reverse Leakage Curent 2 1.2 12 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Leakage Current 1.6 9 8 12 16 20 24 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance www.onsemi.com 3 28 32 EFFECTIVE TRANSIENT THERMAL RESISTANCE MBRS130LT3G, SBRS8130LT3G 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.01 t, TIME (s) 0.001 0.1 1 10 100 1000 1 10 100 1000 EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response, Min Pad 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.0001 0.00001 0.001 0.1 0.01 t, TIME (s) Figure 9. Thermal Response, 1 Inch Pad 2.0 250 1.8 225 1.6 POWER DISSIPATION (W) 275 qJA (°C/W) 200 175 150 125 100 1.0 oz 75 2.0 oz 50 2.0 oz Power based on TA = 25°C 1.0 oz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25 0 0 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 COPPER AREA (mm2) COPPER AREA (mm2) Figure 10. Thermal Resistance vs. Copper Area Figure 11. Power Dissipation vs. Copper Area www.onsemi.com 4 MBRS130LT3G, SBRS8130LT3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRS130LT3/D