Surface Mount
Schottky Power Rectifier
MBRS130T3G,
NRVBS130T3G,
NRVBS130N
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
Features
•
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These are Pb−Free Devices
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B13G
G
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Cathode Polarity Band
A
Y
WW
G
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRS130T3G
SMB
(Pb−Free)
2500 /
Tape & Reel
NRVBS130T3G*
SMB
(Pb−Free)
2500 /
Tape & Reel
NRVBS130NT3G*
SMB
(Pb−Free)
2500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2019 − Rev. 10
1
Publication Order Number:
MBRS130T3/D
MBRS130T3G, NRVBS130T3G, NRVBS130N
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(TL = 115°C)
IF(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
40
A
TJ
−65 to +125
°C
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead
(TL = 25°C)
RqJL
12
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
VF
0.6
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
mA
1.0
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBRS130T3G, NRVBS130T3G, NRVBS130N
1
0.7
0.5
TC = 100°C
I R , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.1
TC = 25°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1
0.9
1.1
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
TJ = 125°C
100°C
75°C
25°C
0
4
8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
200
180
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
C, CAPACITANCE (pF)
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Capacitance
10
RATED VOLTAGE APPLIED
RqJC = 12°C/W
TJ = 125°C
9
8
7
6
5
4
DC
3
SQUARE WAVE
2
1
0
30
40
50
60
70
80
90 100
TC, CASE TEMPERATURE (°C)
110
120
130
5
DC
SQUARE
WAVE
TJ = 125°C
4
π
5
3
CAPACITANCE
LOAD
2
IPK
IAV
10
= 20
1
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating (Case)
Figure 5. Power Dissipation
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3
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
SCALE 1:1
DATE 19 JUL 2012
SCALE 1:1
Polarity Band
Non−Polarity Band
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
GENERIC
MARKING DIAGRAM*
A1
SOLDERING FOOTPRINT*
2.261
0.089
AYWW
XXXXXG
G
AYWW
XXXXXG
G
Polarity Band
Non−Polarity Band
XXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
2.743
0.108
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42669B
SMB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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