MBRS140LT3

MBRS140LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop Pb−Free Package is Available Mechanical Characteristics: • • • • • • SMB CASE 403A PLASTIC Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MARKING DIAGRAM AYWW B14LG G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Tstg, TC −55 to +150 °C TJ −55 to +125 °C dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 110°C) Storage / Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2007 October, 2007 − Rev. 3 B14L = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 1 Device MBRS140LT3 MBRS140LT3G Package Shipping † SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBRS140LT3/D MBRS140LT3 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Lead (Note 1) RqJL 24 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Characteristic 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol TJ = 25°C TJ = 125°C Unit vF 0.5 0.6 0.425 0.58 V TJ = 25°C TJ = 100°C 0.4 0.02 10 5.0 Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 (iF = 1.0 A) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3) see Figure 4 (VR = 40 V) (VR = 20 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 IR mA MBRS140LT3 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 1.0 TJ = 125°C 25°C 100°C −40 °C 0.1 0.1 0.3 0.5 0.7 0.9 100°C 25°C 0.1 0.3 0.1 0.5 0.9 0.7 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) TJ = 125°C 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E−3 TJ = 125°C 100°C 1.0E−3 TJ = 125°C 10E−3 100°C 1.0E−3 25°C 100E−6 100E−6 10E−6 25°C 10 0 20 30 40 1.0E−6 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 1.6 dc FREQ = 20 kHz 1.4 1.2 SQUARE WAVE 1.0 Ipk/Io = p 0.8 Ipk/Io = 5.0 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 10E−6 PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 1.0E−6 100 45 65 85 105 125 0.9 0.8 SQUARE WAVE 0.7 Ipk/Io = p 0.6 Ipk/Io = 5.0 0.5 Ipk/Io = 10 0.4 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 dc 1.6 MBRS140LT3 TJ , DERATED OPERATING TEMPERATURE (° C) 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 1.0E+00 1.0E−01 1.0E−02 5.0 10 15 20 25 30 35 125 24°C/W 115 44°C/W 63°C/W 80°C/W 105 40 Rtja = 94°C/W 95 85 75 65 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 50% 20% 10% 5.0% 2.0% 1.0% 1.0E−03 Rtjl(t) = Rtjl*r(t) 1.0E−04 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (s) 1.0E+00 1.0E−01 1.0E−02 Figure 9. Thermal Response, Junction−to−Lead 50% 20% 10% 5.0% 2.0% 1.0% 1.0E−03 Rtjl(t) = Rtjl*r(t) 1.0E−04 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 10. Thermal Response, Junction−to−Ambient http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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