MBRS190T3

Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 MBRS1100: 100 V, 1.0 A Schottky Rectifier For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage - 100 Volts 150°C Operating Junction Temperature Guardring for Stress Protection • • • • Mechanical Characteristics: Case: Epoxy, Molded Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Part Electrical Specifications Product Compliance Status VRRM Min (V) VF Max (V) IRM Max (uA) IO(rec) Max (A) IFSM Max (A) MBRS1100T3G Pb-free Active 100 0.75 500 1 50 Halide free Package Availability Type SMB-2 Pb-free Standard ✓ ✓ For more information please contact your local sales support at www.onsemi.com trr Max (ns) Cj Max (pF) Package Type SMB-2