MBRS2040LT3G,
NRVBS2040LT3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
www.onsemi.com
. . . employing the Schottky Barrier principle in a metal−to−silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
40 VOLTS
Features
•
•
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over−Voltage Protection
Low Forward Voltage Drop
ESD Ratings:
♦ Human Body Model = 3B (> 16000 V)
♦ Machine Model = C (> 400 V)
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These are Pb−Free Devices
Mechanical Characteristics
•
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8″
Weight: 95 mg (approximately)
Maximum Temperature of 260°C / 10 Seconds for Soldering
Cathode Polarity Band
Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3”
Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Marking: BKJL
SMB
CASE 403A
MARKING DIAGRAM
AYWW
BKJLG
G
BKJL
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRS2040LT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS2040LT3G*
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2017 − Rev. 5
1
Publication Order Number:
MBRS2040LT3/D
MBRS2040LT3G, NRVBS2040LT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 103°C)
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 104°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
2.0
4.0
70
A
A
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +125
°C
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 2)
Symbol
Value
Unit
RθJL
RθJA
22.5
78
°C/W
1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
(IF = 2.0 A)
(IF = 4.0 A)
VF
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(VR = 40 V)
(VR = 20 V)
IR
Value
Unit
TJ = 25°C
TJ = 125°C
0.43
0.50
0.34
0.45
TJ = 25°C
TJ = 100°C
0.8
0.1
20
6.0
Volts
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
MBRS2040LT3G, NRVBS2040LT3G
100
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
100
10
TJ = 100°C
1.0
TJ = 25°C
TJ = 125°C
TJ = -40°C
0.1
0
0.2
0.4
0.6
0.8
TJ = 25°C
TJ = 100°C
0.1
0.2
0
0.4
0.6
0.8
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E-3
I R, MAXIMUM REVERSE CURRENT (AMPS)
I R, REVERSE CURRENT (AMPS)
TJ = 125°C
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10E-3
TJ = 125°C
TJ = 100°C
1.0E-3
100E-6
TJ = 125°C
10E-3
TJ = 100°C
1.0E-3
100E-6
TJ = 25°C
10E-6
1.0E-6
TJ = 25°C
10E-6
1.0E-6
10
3.5
20
30
30
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
SQUARE WAVE
Ipk/Io = p
1.5
Ipk/Io = 5
1.0
Ipk/Io = 10
0.5
Ipk/Io = 20
0
20
20
VR, REVERSE VOLTAGE (VOLTS)
3.0
2.0
10
VR, REVERSE VOLTAGE (VOLTS)
dc
2.5
0
40
PFO , AVERAGE POWER DISSIPATION (WATTS)
0
I O , AVERAGE FORWARD CURRENT (AMPS)
10
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E-3
0
100
40
60
80
100
120
1.2
SQUARE WAVE
1.0
Ipk/Io = p
dc
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
140
40
0.5
1.0
1.5
2.0
2.5
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
3.0
MBRS2040LT3G, NRVBS2040LT3G
TJ , DERATED OPERATING TEMPERATURE ( °C)
C, CAPACITANCE (pF)
1000
TJ = 25°C
100
10
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
5.0
10
15
20
25
30
35
125
Rtja = 22.5°C/W
115
105
40
95
42°C/W
61°C/W
85
78°C/W
75
92°C/W
65
5.0
0
10
15
20
30
25
35
40
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1.0
50%
20%
10%
0.1
5.0%
2.0%
0.01
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
1.0
0.1
10
100
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T, TIME (s)
Figure 9. Thermal Response Junction to Lead
1.0
50%
20%
0.1
10%
5.0%
2.0%
0.01
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient
www.onsemi.com
4
10
100
1,000
MBRS2040LT3G, NRVBS2040LT3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS2040LT3/D