MBRS260T3G,
NRVBS260T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
www.onsemi.com
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
Features
•
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Over−Voltage Protection
Low Forward Voltage Drop
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These are Pb−Free Devices
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B26G
G
Mechanical Characteristics
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
B26
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
MBRS260T3G,
NRVBS260T3G*,
NRVBS260T3G−VF01*
Package
Shipping†
SMB
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
January, 2018 − Rev. 9
1
Publication Order Number:
MBRS260T3/D
MBRS260T3G, NRVBS260T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 95°C)
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
A
2.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
Storage Temperature Range
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
60
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
V/ms
10,000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
Value
Unit
RqJL
RqJA
24
80
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
vF
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
IR
(VR = 60 V)
Value
Unit
TJ = 25°C
TJ = 125°C
0.51
0.63
0.475
0.55
TJ = 25°C
TJ = 125°C
0.2
20
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
MBRS260T3G, NRVBS260T3G
TYPICAL CHARACTERISTICS
10
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TA = 150°C
TA = 125°C
1
TA = 25°C
TA = 75°C
TA = −40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
TA = 125°C
1
0.8
TA = 25°C
TA = 75°C
TA = −40°C
0.1
0.0
0.1
0.0
TA = 150°C
Figure 1. Typical Forward Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.8
Figure 2. Maximum Forward Voltage
1.0E−01
100
IR, REVERSE CURRENT (A)
TA = 150°C
25°C
f = 1 MHz
TA = 125°C
1.0E−03
C, CAPACITANCE (pF)
1.0E−02
TA = 75°C
1.0E−04
TA = 25°C
1.0E−05
1.0E−06
1.0E−07
10
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
50
0
60
PFO, AVERAGE POWER DISSIPATION (W)
IF, AVERAGE FORWARD CURRENT (A)
RqJL = 24°C/W
2.5
2
SQUARE WAVE
1.5
1
0.5
0
60
70
80
90 100 110 120 130
TL, LEAD TEMPERATURE (°C)
30
40
50
60
2.5
3
Figure 4. Typical Capacitance
3.5
dc
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
3
10
140
150
2
1.8
1.6
dc
1.4
1.2
1
SQUARE WAVE
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating − Junction to Lead
Figure 6. Forward Power Dissipation
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3
RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBRS260T3G, NRVBS260T3G
1.0E+00
50%
20%
1.0E−01 10%
5.0%
1.0E−02 2.0%
1.0%
1.0E−03
Rtjl(t) = Rtjl*r(t)
1.0E−04
1.0E+00
1.0E−01
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
t, TIME (s)
Figure 7. Thermal Response − Junction to Case
50%
20%
10%
5.0%
1.0E−02 2.0%
1.0E−03 1.0%
Rtjl(t) = Rtjl*r(t)
1.0E−04
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 8. Thermal Response − Junction to Ambient
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4
MBRS260T3G, NRVBS260T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS260T3/D
