MBRS2H100T3G

MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G SBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package www.onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. MARKING DIAGRAMS SMA CASE 403D A210 AYWWG SMB CASE 403A AYWW B210G G Features • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Overvoltage Protection Low Forward Voltage Drop NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* Mechanical Characteristics • • • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B These Devices are Pb−Free and are RoHS Compliant Device Meets MSL1 Requirements A210 = MBRA2H100T3G NRVBA2H100T3G B210 = MBRS2H100T3G NBRS2H100T3G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† SMA (Pb−Free) 5,000 / Tape & Reel MBRS2H100T3G, SMB NBRS2H100T3G*, NBRS2H100T3G−VF01*, (Pb−Free) SBRA2H100T3G 2,500 / Tape & Reel Device MBRA2H100T3G, NRVBA2H100T3G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 January, 2018 − Rev. 10 1 Publication Order Number: MBRS2H100/D MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 150°C) Symbol Value Unit VRRM VRWM VR 100 V IO A 2.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C 130 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (Note 2) MBRA2H100T3G, NRVBA2H100T3G MBRS2H100T3G, NBRS2H100T3G YJCL Thermal Resistance, Junction−to−Ambient (Note 2) MBRA2H100T3G, NRVBA2H100T3G MBRS2H100T3G, NBRS2H100T3G RqJA Thermal Resistance, Junction−to−Ambient (Note 3) MBRA2H100T3G, NRVBA2H100T3G MBRS2H100T3G, NBRS2H100T3G RqJA Value Unit °C/W 14 12 °C/W 75 71 °C/W 275 230 2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board. 3. Mounted with minimum recommended pad size 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Value Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 4) (iF = 2.0 A) vF Maximum Instantaneous Reverse Current (Note 4) (VR = 100 V) IR 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 TJ = 25°C TJ = 125°C 0.79 0.65 0.008 1.5 Unit V mA MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G TYPICAL CHARACTERISTICS 100 150°C IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 25°C 125°C 10 1 125°C 150°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 1.1 0.3 1.2 0.5 0.7 0.9 1.1 1.3 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 10 IR, REVERSE CURRENT (mA) 150°C 1 125°C 0.1 0.01 0.001 25°C 0.0001 150°C 1 125°C 0.1 0.01 25°C 0.001 0.00001 0 10 20 30 40 50 60 70 80 90 0 100 10 20 VR, REVERSE VOLTAGE (V) 30 40 50 60 80 70 90 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 4.0 450 IF(AV), AVERAGE FORWARD CURRENT (A) 400 C, CAPACITANCE (pF) 25°C 1 0.1 0.1 IR, REVERSE CURRENT (mA) 10 TJ = 25°C f = 1 MHz 350 300 250 200 150 100 RqJL = 14°C/W dc 3.0 Square Wave 2.0 1.0 50 0 0 0 10 20 30 40 50 60 70 80 90 100 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating − Lead www.onsemi.com 3 170 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G 4.0 RqJA = 71°C/W dc 3.0 RqJA = 100°C/W dc 2.0 Square Wave 1.0 0 0 20 40 60 80 100 120 160 175 140 PFO, AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 5 TJ = 175°C 4 Square Wave 3 dc 2 1 0 0 1 R(t) (C/W) 4 5 Figure 8. Maximum Forward Power Dissipation Figure 7. Current Derating, Ambient 10 3 IO, AVERAGE FORWARD CURRENT (A) TA, AMBIENT TEMPERATURE (°C) 100 2 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRS2H100T3G/NBRS2H100T3G 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 PULSE TIME (s) Figure 10. Thermal Response, Junction−to−Ambient (min pad) − MBRS2H100T3G/NBRS2H100T3G www.onsemi.com 4 1000 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G TYPICAL CHARACTERISTICS 100 R(t) (C/W) 10 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.0001 0.00001 0.001 0.01 1.0 0.1 10 100 1000 PULSE TIME (s) Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100T3G/NRVBA2H100T3G 1000 50% (DUTY CYCLE) 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.0001 0.00001 0.001 0.01 1.0 0.1 10 100 PULSE TIME (s) Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100T3G/NRVBA2H100T3G 2.5 2.0 oz Power Based on TA = 25°C POWER DISSIPATION (W) R(t) (C/W) 100 2.0 1.0 oz 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 COPPER AREA (sq mm) Figure 13. PD, Junction−to−Ambient (URS copper area) www.onsemi.com 5 1000 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G PACKAGE DIMENSIONS SMA CASE 403D ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. HE E DIM A A1 b c D E HE L bD POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.000 0.157 2.000 0.079 2.000 0.079 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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