MBRS3100T3G,
NRVBS3100T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SMC 2−LEAD
CASE 403AC
MARKING DIAGRAM
AYWW
B310G
G
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
B310
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
** The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRS3100T3G
SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
NRVBS3100T3G*
SMC 2−Lead
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
August, 2017 − Rev.7
1
Publication Order Number:
MBRS3100T3/D
MBRS3100T3G, NRVBS3100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
IF(AV)
Non−repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Operating Junction Temperature Range (Note 1)
TJ
3.0
130
−65 to +175
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Symbol
Value
Unit
RqJL
11
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25°C)
(iF = 6.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 125°C)
(iF = 6.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
0.79
0.90
0.62
0.70
0.05
5.0
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBRS3100T3G, NRVBS3100T3G
TYPICAL CHARACTERISTICS
10
75°C
125°C
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
25°C
1
0.1
0.2
0.3
0.4
0.6
0.5
0.7
0.8
75°C
0.3
0.4
0.5
0.6
0.7
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
TJ = 25°C
C, CAPACITANCE (pF)
1E−05
75°C
1E−06
25°C
1E−07
0
20
40
60
80
100
20
40
60
80
Figure 4. Typical Capacitance
6
5
dc
4
SQUARE WAVE
2
1
100
0
Figure 3. Typical Reverse Current
RATED VOLTAGE APPLIED
RqJL = 11 °C/W
TJ = 150°C
90
10
VR, REVERSE VOLTAGE (V)
7
3
100
VR, REVERSE VOLTAGE (V)
110
120
130
140
150
160
170
Pfo, AVERAGE POWER DISSIPATION
(W)
IR, REVERSE CURRENT (A)
1
1000
1E−04
IF, AVERAGE FORWARD
CURRENT (A)
0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
125°C
0
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1E−03
1E−08
25°C
1
0.1
0.9
125°C
180
100
4.5
dc
4
3.5
3
SQUARE WAVE
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating − Lead
Figure 6. Forward Power Dissipation
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3
6
MBRS3100T3G, NRVBS3100T3G
PACKAGE DIMENSIONS
SMC 2−LEAD
CASE 403AC
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
DETERMINED BY DIMENSION L.
HE
E
D
A1
DIM
A
A1
A2
b
c
D
E
HE
L
c
DETAIL AJ
TOP VIEW
DETAIL A
A2
L
A
MILLIMETERS
MIN
MAX
1.95
2.61
0.05
0.20
1.90
2.41
2.90
3.20
0.15
0.41
5.55
6.25
6.60
7.15
7.75
8.15
0.75
1.60
INCHES
MIN
MAX
0.077
0.103
0.008
0.002
0.095
0.075
0.126
0.114
0.016
0.006
0.246
0.219
0.281
0.260
0.305
0.321
0.063
0.030
b
END VIEW
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
8.750
0.344
J
2X
3.790
0.149
2X
2.250
0.089
mm Ǔ
ǒinches
SCALE 4:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS3100T3/D
