MBRS3200T3G,
NRVBS3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
•
•
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage − 200 V
175°C Operating Junction Temperature
Guard−Ring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements: AEC−Q101
Qualified and PPAP Capable*
These are Pb−Free Devices
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B320G
G
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings:
♦ Machine Model = A
♦ Human Body Model = 1C
B320
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRS3200T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
NRVBS3200T3G*
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
June, 2017 − Rev. 7
1
Publication Order Number:
MBRS3200T3/D
MBRS3200T3G, NRVBS3200T3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
200
V
Average Rectified Forward Current (TL = 150 °C)
IF(AV)
3.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Operating Junction Temperature
TJ
A
100
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RqJL
RqJA
13
62
°C/W
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 3.0 A, TJ = 25°C)
(IF = 4.0 A, TJ = 25°C)
(IF = 3.0 A, TJ = 150°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
IR
V
0.84
0.86
0.59
1.0
5.0
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TA = 150°C
10
TA = 175°C
TA = 25°C
1
0.1
100
TA = 100°C
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
TA = 100°C
TA = 175°C
10
TA = 25°C
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
TA = 150°C
0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, FORWARD VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRS3200T3G, NRVBS3200T3G
1.0E−02
1.0E−02
TA = 175°C
TA = 150°C
TA = 100°C
1.0E−06
1.0E−07
1.0E−09
0
TA = 100°C
1.0E−05
1.0E−06
1.0E−08
TA = 150°C
1.0E−04
1.0E−04
1.0E−05
TA = 175°C
1.0E−03
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
1.0E−03
TA = 25°C
1.0E−07
TA = 25°C
20
40
1.0E−08
60
80
100
120 140 160 180 200
1.0E−09
0
20
40
60
Figure 3. Typical Reverse Current
120 140 160 180 200
IF, AVERAGE FORWARD CURRENT (A)
7
TC = 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
100
0
20
40
60
80
120 140 160 180 200
100
RqJL = 13°C/W
6
dc
5
SQUARE WAVE
4
3
2
1
0
80
90
100 110 120 130 140 150 160 170 180
VR, REVERSE VOLTAGE (V)
TL, LEAD TEMPERATURE (°C)
Figure 5. Typical Capacitance
Figure 6. Current Derating − Lead
Pfo, AVERAGE POWER DISSIPATION (W)
C, CAPACITANCE (pF)
100
Figure 4. Maximum Reverse Current
1000
10
80
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
5
4.5
4
SQUARE WAVE
3.5
dc
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
IO, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
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3
6
MBRS3200T3G, NRVBS3200T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS3200T3/D
