MBRS3201PT3G

MBRS3201P 200V, 3A Schottky Fast Soft-Recovery Power Rectifier SMC Power Surface Mount Package www.onsemi.com Features • Lower Forward Voltage than any Ultrafast Rectifier: • • • • VF < 0.59 V at 150°C Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns Soft Recovery Characteristics: Softness Factor (tb/ta) ≥ 1 Highly Stable Over Temperature These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SCHOTTKY RECTIFIER 3 AMPS, 200 VOLTS SMC 2−LEAD CASE 403AC Benefits • • • • Significantly Reduced EMI Eliminates the Need of Snubber Circuits Low Switching and Heat Losses Improved Thermal Management MARKING DIAGRAM Applications • Engine and Convenience Control Systems • Motor Controls • Battery Chargers and Switching Power Supplies AYWW B3xG G Mechanical Characteristics • • • • • • • Small Compact Surface Mount Package with J-Bend Leads Rectangular Package for Automated Handling Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: ♦ Machine Model = A ♦ Human Body Model = 1C Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds Cathode Polarity Band B321 A Y WW G = Specific Device Code = Assembly Location* = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† MBRS3201PT3G SMC 2−Lead (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2017 − Rev. 2 1 Publication Order Number: MBRS3201P/D MBRS3201P MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 70°C) IF(AV) 3 A Nonrepetitive Peak Surge Current IFSM 100 A TJ −55 to +150 °C Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Lead Characteristic RqJL 12 °C/W Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF = 3 A, TJ = 25°C) (IF = 3 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Rated VR) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) IR Maximum Reverse Recovery Time (IF = 1 A, di/dt = 100 A/ms, VR = 30 V) trr V 0.84 0.59 1.0 5.0 mA mA ns 35 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 10 25°C 150°C 1.0 100°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 100°C 0.1 0.2 1.2 25°C 150°C 1.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 1.1 1.2 MBRS3201P TYPICAL CHARACTERISTICS 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) 1E−1 IR, REVERSE CURRENT (A) 1E−2 1E−3 1.0E−02 150°C 1E−4 TC = 150°C 1.0E−03 1E−5 100°C TC = 25°C 1.0E−04 1E−6 1E−7 1.0E−05 25°C 1E−8 1E−9 0 20 40 60 80 1.0E−06 0 100 120 140 160 180 200 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current C, CAPACITANCE (pF) 1000 100 10 1.0 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) 4.0 IF, AVERAGE FORWARD CURRENT (A) PFO, AVERAGE POWER DISSIPATION (W) Figure 5. Typical Capacitance 3.5 3.0 2.5 SQUARE 2.0 DC 1.5 1.0 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 7 6 DC 5 4 SQUAREWAVE 3 2 1 0 80 90 100 110 120 130 140 IO, AVERAGE FORWARD CURRENT TL, LEAD TEMPERATURE (°C) Figure 6. Power Dissipation Figure 7. Derating Curve www.onsemi.com 3 150 160 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B DATE 27 JUL 2017 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. HE E D A1 DIM A A1 A2 b c D E HE L c DETAIL A TOP VIEW DETAIL A A2 L A b END VIEW SIDE VIEW INCHES MIN MAX 0.077 0.103 0.002 0.008 0.075 0.095 0.114 0.126 0.006 0.016 0.219 0.246 0.260 0.281 0.305 0.321 0.030 0.063 GENERIC MARKING DIAGRAM* AYWW XXXXG G RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 2X MILLIMETERS MIN MAX 1.95 2.61 0.05 0.20 1.90 2.41 2.90 3.20 0.15 0.41 5.55 6.25 6.60 7.15 7.75 8.15 0.75 1.60 XXXX A Y WW G 3.790 0.149 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 2X 2.250 0.089 mm Ǔ ǒinches SCALE 4:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON97675F SMC 2−LEAD *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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