MBRS330T3G

MBRS330T3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SMC(DO-214AB)

  • 描述:

    肖特基二极管 Single VR=30V IF=3A IR=2mA SMC

  • 详情介绍
  • 数据手册
  • 价格&库存
MBRS330T3G 数据手册
MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Features • • • • • • • • • Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse #1 SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band on Plastic Body Indicates Cathode Lead Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) SMC 2−LEAD CASE 403AC MARKING DIAGRAM AYWW B3xG G B3x x A Y WW G = Device Code = 2, 3 or 4 = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS320T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS330T3G SMC (Pb−Free) 2,500 / Tape & Reel MBRS340T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS330T3G SMC (Pb−Free) 2,500 / Tape & Reel SBRS8320T3G* SMC (Pb−Free) 2,500 / Tape & Reel SBRS8340T3G* SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2017 − Rev. 14 1 Publication Order Number: MBRS340T3/D MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Average Rectified Forward Current IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature MBRS320T3G, SBRS8320T3G MBRS330T3G, NRVBRS330T3G MBRS340T3G, SBRS8340T3G Unit 20 30 40 V 3.0 @ TL = 110°C 4.0 @ TL = 105°C A A 80 TJ − 65 to +150 ISO 7637 Pulse #1 (100 V, 10W) °C Pulses 5000 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead 11 RqJL °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.50 mA 2.0 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 TJ = 100°C TJ = 125°C 1 0.1 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 25°C TJ = −40°C TJ = −65°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.0 TJ = 25°C TJ = −40°C TJ = −65°C 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 100°C TJ = 125°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G 1.E−01 IR, REVERSE CURRENT (AMPS) 1.E−01 TJ = 125°C 1.E−02 1.E−02 TJ = 125°C 1.E−03 1.E−03 TJ = 100°C TJ = 100°C 1.E−04 1.E−04 1.E−05 1.E−06 IR, MAXIMUM REVERSE CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS (continued) TJ = 25°C 0 5 TJ = 25°C 1.E−05 10 15 20 25 30 35 40 1.E−06 5 0 10 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) Freq = 20 kHz RqJL = 11°C/W dc 4 3.5 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 90 100 110 130 120 140 150 1.8 1.6 IPK/IO = p 1.4 SQUARE WAVE dc 0.8 0.6 0.4 0.2 0 0 1 0.5 2 1.5 2.5 3 3.5 4 4.5 IO, AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation TYPICAL CAPACITANCE AT 0 V = 658 pF TJ = 25°C 500 400 300 200 100 4 40 1 600 0 35 30 IPK/IO = 5 1.2 Figure 5. Current Derating 0 25 2 TL, LEAD TEMPERATURE (°C) 700 20 Figure 4. Maximum Reverse Current 5 C, CAPACITANCE (pF) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 4.5 15 VR, REVERSE VOLTAGE (V) 8 12 16 20 24 28 32 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance www.onsemi.com 3 36 40 5 MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. HE E D A1 DIM A A1 A2 b c D E HE L c J DETAIL A TOP VIEW DETAIL A A2 L A MILLIMETERS MIN MAX 1.95 2.61 0.05 0.20 1.90 2.41 2.90 3.20 0.15 0.41 5.55 6.25 6.60 7.15 7.75 8.15 0.75 1.60 INCHES MIN MAX 0.077 0.103 0.002 0.008 0.075 0.095 0.114 0.126 0.006 0.016 0.219 0.246 0.260 0.281 0.305 0.321 0.030 0.063 b END VIEW SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 J 2X 3.790 0.149 2X 2.250 0.089 mm Ǔ ǒinches SCALE 4:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRS340T3/D
MBRS330T3G
1. 物料型号:文档列出了六种不同的肖特基整流器型号。

2. 器件简介:这些设备采用大面积金属-硅功率二极管中的肖特基势垒原理,具有外延结构、氧化物钝化和金属覆盖接触。非常适合低电压、高频率整流,或作为自由轮和极性保护二极管,在对尺寸和重量有严格要求的表面安装应用中。

3. 引脚分配:文档提供了引脚分配图和标记图,指示了阳极和阴极引脚。

4. 参数特性:包括小尺寸、紧凑的表面安装封装、高稳定性的氧化物钝化结、非常低的正向电压降(在3.0A、TJ=25°C时最大0.5V)、优秀的承受反向雪崩能量瞬变的能力、应力保护的护环、通过ISO 7637脉冲#1测试、无铅、无卤素/无溴化物,符合RoHS标准。

5. 功能详解:文档详细描述了机械特性、电气特性、热特性和典型电气特性,包括正向电压、反向电流和电容等。

6. 应用信息:这些肖特基整流器适用于需要低电压、高频率整流的场合,或作为自由轮和极性保护二极管。

7. 封装信息:提供了封装尺寸和推荐的焊接足迹。
MBRS330T3G 价格&库存

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