MBRS410ET3

MBRS410ET3 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 4.0 AMPERES, 10 VOLTS Features • • • • • • • • • Very Low VF Accompanied by Low IR 1st in the Market Place with a 10 VR Schottky Rectifier Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Designed for Low Leakage Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • Case: Epoxy, Molded • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band on Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V Average Rectified Forward Current (@ TL = 130°C) IO 4.0 A IFSM 250 A TJ −65 to +150 °C Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature MARKING DIAGRAM AYWW B4E1G G B4E1 = Specific Device Code A = Assembly Location* Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION MAXIMUM RATINGS Rating SMC 2−LEAD CASE 403AC Device Package Shipping† MBRS410ET3 SMC 2500/Tape & Reel SMC (Pb−Free) 2500/Tape & Reel MBRS410ET3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 August, 2017 −Rev. 5 1 Publication Order Number: MBRS410ET3/D MBRS410ET3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Thermal Resistance, Junction−to−Ambient Symbol 5 mm x 5 mm (Note 2) 1 Inch x 1/2 inch RqJL 12 7.0 RqJA 109 59 VF TJ = 25°C TJ = 100°C 0.475 0.500 0.525 0.370 0.395 0.430 TJ = 25°C TJ = 100°C 50 150 2000 4000 Unit °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A) (IF = 4.0 A) (IF = 8.0 A) Maximum Instantaneous Reverse Current (Note 1) IR (Rated dc Voltage, VR = 5.0 V) (Rated dc Voltage, VR = 10 V) V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Mounted with Minimum Recommended Pad Size, PC Board FR4. TYPICAL ELECTRICAL CHARACTERISTICS 100 25°C VF @ 125°C IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 −40°C 100°C 10 75°C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 VF @ 125°C 100°C 10 75°C 1 0.1 0.7 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−02 10,000 1.0E−03 100°C 1.0E−04 75°C 1.0E−05 25°C 1.0E−06 1.0E−07 0 2 25°C f = 1 MHz C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) IR @ 125°C 4 6 8 10 1000 0 2 4 6 8 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance www.onsemi.com 2 10 MBRS410ET3 TYPICAL ELECTRICAL CHARACTERISTICS (continued) IF, AVERAGE FORWARD CURRENT (A) 8 RATED VOLTAGE APPLIED RqJL = 12 °C/W TJ = 125°C dc 7 6 5 PFO, AVERAGE POWER DISSIPATION (W) 9 SQUARE WAVE 4 3 2 1 0 100 110 120 130 140 150 160 TL, LEAD TEMPERATURE (°C) 3.5 dc 3 TJ = 125°C 2.5 2 SQUARE WAVE 1.5 1 0.5 0 0 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 5. Current Derating, Junction−to−Lead 100 1 2 3 4 5 6 7 8 9 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation D = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Thermal Response, Junction−to−Ambient (min pad) 100 D = 0.5 10 0.2 0.1 0.05 1 0.02 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad) www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B DATE 27 JUL 2017 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. HE E D A1 DIM A A1 A2 b c D E HE L c DETAIL A TOP VIEW DETAIL A A2 L A b END VIEW SIDE VIEW INCHES MIN MAX 0.077 0.103 0.002 0.008 0.075 0.095 0.114 0.126 0.006 0.016 0.219 0.246 0.260 0.281 0.305 0.321 0.030 0.063 GENERIC MARKING DIAGRAM* AYWW XXXXG G RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 2X MILLIMETERS MIN MAX 1.95 2.61 0.05 0.20 1.90 2.41 2.90 3.20 0.15 0.41 5.55 6.25 6.60 7.15 7.75 8.15 0.75 1.60 XXXX A Y WW G 3.790 0.149 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 2X 2.250 0.089 mm Ǔ ǒinches SCALE 4:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON97675F SMC 2−LEAD *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 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