MBRS540T3

MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES, 40 VOLTS Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection Pb−Free Package is Available SMC CASE 403 PLASTIC Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Rating: Machine Model, C (> 400 V) Human Body Model, 3B (> 8000 V) Device Meets MSL 1 Requirements AYWW B540G G B540 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 105°C) IF(AV) 5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 KHz, TC = 80°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 190 A Storage Temperature Range Tstg −65 to +150 °C TJ −65 to +150 °C dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) ORDERING INFORMATION Device MBRS540T3 MBRS540T3G Package Shipping† SMC 2500/Tape & Reel SMC (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 5 1 Publication Order Number: MBRS540T3/D MBRS540T3 THERMAL CHARACTERISTICS Symbol Characteristic Value Unit °C/W Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) RqJL 12 RqJA 111 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (iF = 5.0 A, TC= 25°C) VF 0.50 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 100°C) iR 0.3 15 mA 2. Rating applies when surface mounted on the minimum pad size recommended. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (A) 1 10 TJ = 125°C 0.1 0.10 TJ = 100°C 0.20 TJ = 25°C 0.30 TJ = −55°C 0.40 0.50 TJ = 125°C 0.60 TJ = 100°C TJ = −55°C TJ = 25°C 0.20 0.30 0.40 0.50 0.60 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 0.70 100E−3 TJ = 125°C 10E−3 IR, REVERSE CURRENT (A) 1 0.1 0.10 1E−3 TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 IR, MAXIMUM REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 125°C 10E−3 TJ = 100°C 1E−3 TJ = 25°C 100E−6 100E−9 TJ = −55°C 10E−9 1E−9 100E−12 0 10 20 30 VR, REVERSE VOLTAGE (V) 40 TJ = −55°C 10E−6 1E−6 0 Figure 3. Typical Reverse Current 10 20 30 VR, REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current http://onsemi.com 2 40 MBRS540T3 TYPICAL CHARACTERISTICS IO, AVERAGE FORWARD CURRENT (A) 8 PFO, AVERAGE POWER DISSIPATION (W) 9 freq = 20 kHz dc 7 6 5 4 3 2 1 SQUARE WAVE Ipk/IO = p Ipk/IO = 5 Ipk/IO = 10 Ipk/IO = 20 0 25 45 65 85 105 125 145 TL, LEAD TEMPERATURE (°C) 4.5 4 SQUARE WAVE 3.5 3 2.5 2 Ipk/IO = p 1.5 Ipk/IO = 5 1 Ipk/IO = 10 0.5 0 Ipk/IO = 20 0 TJ, DERATED OPERATING TEMPERATURE (°C) TJ = 25 °C 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) 2 3 4 5 6 7 8 9 Figure 6. Forward Power Dissipation C, CAPACITANCE (pF) 100 1 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating 1000 dc 35 40 125 RqJA = 12 °C/W 115 105 RqJA = 47 °C/W 95 RqJA = 81 °C/W 85 RqJA = 111 °C/W 75 RqJA = 136 °C/W 65 55 0 Figure 7. Capacitance 5 35 10 15 20 25 30 VR, DC REVERSE VOLTAGE (V) 40 Figure 8. Typical Operating Temperature Derating http://onsemi.com 3 45 MBRS540T3 r(t), TRANSIENT THERMAL RESPONSE (C/W) 1000 100 D = 0.5 10 0.2 0.1 P(pk) 0.05 0.02 1 0.01 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (s) r(t), TRANSIENT THERMAL RESPONSE (C/W) Figure 9. Thermal Response − MBRS540T3 on min pad 100 D = 0.5 0.2 10 0.1 P(pk) 0.05 1 0.02 0.01 0.1 0.00001 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.1 0.01 1 t, TIME (s) Figure 10. Thermal Response − MBRS540T3 on 1” pad http://onsemi.com 4 10 100 1000 MBRS540T3 PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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