MBT35200MT1

MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique 35 VOLTS 2.0 AMPS PNP TRANSISTOR Site and Control Change Requirements • Pb−Free Packages are Available* MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −2.0 Adc Collector Current − Peak ICM −5.0 A Electrostatic Discharge ESD Rating Collector Current − Continuous CASE 318G TSOP−6 STYLE 6 COLLECTOR 1, 2, 5, 6 3 BASE HBM Class 3 MM Class C 4 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Thermal Resistance, Junction−to−Lead #1 RqJL Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Notes 2 & 3) Junction and Storage Temperature Range TJ, Tstg Max Unit 625 5.0 mW mW/°C 200 1.0 8.0 120 80 MARKING DIAGRAM G4 MG G °C/W 1 °C/W G4 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) °C/W ORDERING INFORMATION W mW/°C W 1.75 −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 9 Package Shipping† TSOP−6 3,000 / Tape & Reel MBT35200MT1G TSOP−6 (Pb−Free) 3,000 / Tape & Reel SMBT35200MT1G TSOP−6 (Pb−Free) 3,000 / Tape & Reel Device MBT35200MT1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 4 1 Publication Order Number: MBT35200MT1/D MBT35200MT1, SMBT35200MT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −35 −45 − −55 −65 − −5.0 −7.0 − − −0.03 −0.1 − −0.03 −0.1 − −0.01 −0.1 100 100 100 200 200 200 − 400 − − − − −0.125 −0.175 −0.260 −0.15 −0.20 −0.31 − −0.68 −0.85 − −0.81 −0.875 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −35 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −35 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = −1.0 A, VCE = −1.5 V) (IC = −1.5 A, VCE = −1.5 V) (IC = −2.0 A, VCE = −3.0 V) hFE Collector −Emitter Saturation Voltage (Note 1) (IC = −0.8 A, IB = −0.008 A) (IC = −1.2 A, IB = −0.012 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 1) (IC = −1.2 A, IB = −0.012 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 1) (IC = −2.0 A, VCE = −3.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W) ton − 35 − nS Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W) toff − 225 − nS 1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 MHz 0.1 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) MBT35200MT1, SMBT35200MT1G IC/IB = 100 50 10 0.01 0.001 0.001 0.01 0.1 100°C 0.15 25°C 0.10 -55°C 0.05 0 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.0 100°C VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 0.20 0.001 1.4 1.2 25°C 1.0 0.8 -55°C 0.4 0.2 0 -55°C 0.8 25°C 0.6 100°C 0.4 0.2 0 0.001 0.01 0.1 0.001 1.0 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.1 750 1.0 700 0.9 C ibo , INPUT CAPACITANCE (pF) V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS) IC/IB = 50 1.0 1.6 0.6 0.25 -55°C 0.8 25°C 0.7 0.6 100°C 0.5 0.4 650 600 550 500 450 400 350 300 0.3 0.001 0.01 0.1 0 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (VOLTS) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 3 4.5 5.0 MBT35200MT1, SMBT35200MT1G 10 200 IC , COLLECTOR CURRENT (AMPS) Cobo, OUTPUT CAPACITANCE (pF) 225 175 150 125 100 75 50 1 s 100 ms 10 ms DC 0.1 SINGLE PULSE AT Tamb = 25°C 0.01 0 5.0 0 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 100 ms 1.0 25 1.0 1 ms VCB, COLLECTOR BASE VOLTAGE (VOLTS) 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Output Capacitance Figure 8. Safe Operating Area 10 15 20 25 30 0.1 35 100 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 9. Normalized Thermal Response http://onsemi.com 4 10 100 1000 MBT35200MT1, SMBT35200MT1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE U D H 6 5 ÉÉ E1 1 NOTE 5 2 L2 4 GAUGE PLANE E 3 L b DETAIL Z e 0.05 M A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. SEATING PLANE DIM A A1 b c D E E1 e L L2 M c A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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