MBT6429DW1T1G
Amplifier Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
(3)
(2)
(1)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
45
Vdc
Collector −Base Voltage
VCBO
55
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Collector Current − Continuous
(4)
(5)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
PD
Max
Unit
SC−88
(SOT−363)
CASE 419B
1
mW
150
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
(6)
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended foot print.
1T M G
G
1
1T
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBT6429DW1T1G
Package
Shipping†
SC−88
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
1
Publication Order Number:
MBT6429DW1T1/D
MBT6429DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
45
−
55
−
−
0.1
−
0.01
−
0.01
500
500
500
500
−
1250
−
−
−
−
0.2
0.6
0.56
0.66
100
700
−
3.0
−
8.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MHz
pF
pF
MBT6429DW1T1G
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
RS ≈ 0
IC = 10 mA
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
20
3.0 mA
10
1.0 mA
7.0
5.0
RS ≈ 0
f = 10 Hz
10
100 Hz
7.0
10 kHz
1.0 kHz
5.0
300 mA
3.0
10
20
50 100 200
3.0
0.01 0.02
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
Figure 2. Effects of Frequency
IC = 10 mA
3.0 mA
1.0 mA
300 mA
0.3
100 mA
0.2
RS ≈ 0
0.1
10
20
10 mA
50 100 200
10
16
3.0
1.0
0.7
0.5
5.0
20
BANDWIDTH = 1.0 Hz
2.0
0.05 0.1 0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Effects of Collector Current
NF, NOISE FIGURE (dB)
In, NOISE CURRENT (pA)
10
7.0
5.0
100 kHz
BANDWIDTH = 10 Hz to 15.7 kHz
12
500 mA
8.0
IC = 1.0 mA
100 mA
10 mA
4.0
30 mA
0
10
500 1k 2k 5k 10k 20k 50k 100k
f, FREQUENCY (Hz)
20
Figure 4. Noise Current
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
20
BANDWIDTH = 1.0 Hz
IC = 10 mA
16
100 mA
100
70
50
NF, NOISE FIGURE (dB)
VT, TOTAL NOISE VOLTAGE (nV)
300
200
3.0 mA
1.0 mA
30
300 mA
20
10
7.0
5.0
30 mA
10 mA
IC = 10 mA
3.0 mA
1.0 mA
12
300 mA
8.0
100 mA
30 mA
4.0
10 mA
BANDWIDTH = 1.0 Hz
0
3.0
10
20
10
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Total Noise Voltage
20
50 100 200 500 1k 2k 5k 10k 20k 50k 100k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
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3
h FE, DC CURRENT GAIN (NORMALIZED)
MBT6429DW1T1G
4.0
3.0
VCE = 5.0 V
2.0
TA = 125°C
25°C
1.0
-55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.2
0.3
0.5
IC, COLLECTOR CURRENT (mA)
0.1
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
RθVBE, BASE-EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
-0.4
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
0.6
VBE @ VCE = 5.0 V
0.4
0.2
-0.8
-1.2
TJ = 25°C to 125°C
-1.6
-2.0
-55°C to 25°C
VCE(sat) @ IC/IB = 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
-2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
8.0
C, CAPACITANCE (pF)
6.0
TJ = 25°C
Cob
4.0
3.0
Ceb
Cib
Ccb
2.0
1.0
0.8
0.1
0.2
1.0
2.0
5.0
0.5
10
20
VR, REVERSE VOLTAGE (VOLTS)
50 100
Figure 10. Temperature Coefficients
50
100
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 9. “On” Voltages
20
Figure 11. Capacitance
500
300
200
100
VCE = 5.0 V
TJ = 25°C
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 12. Current−Gain − Bandwidth Product
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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