5.0 V ECL Differential
Receiver
MC10EL16, MC100EL16
Description
The MC10EL/100EL16 is a differential receiver. The device is
functionally equivalent to the E116 device with higher performance
capabilities. With output transition times significantly faster than the
E116, the EL16 is ideally suited for interfacing with high frequency
sources.
The VBB pin, an internally generated voltage supply, is available to
this device only. For single-ended input conditions, the unused
differential input is connected to VBB as a switching reference voltage.
VBB may also rebias AC coupled inputs. When used, decouple VBB
and VCC via a 0.01 mF capacitor and limit current sourcing or sinking
to 0.5 mA. When not used, VBB should be left open.
Under open input conditions (pulled to VEE) internal input clamps
will force the Q output LOW.
The 100 Series contains temperature compensation.
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190 ps Propagation Delay
PECL Mode Operating Range: VCC = 4.2 V to 5.7 V with VEE = 0 V
NECL Mode Operating Range: VCC = 0 V with VEE = −4.2 V to −5.7 V
Internal Input Pulldown Resistors
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
NC
1
8
VCC
D
2
7
Q
1
1
SOIC−8 NB
D SUFFIX
CASE 751−07
TSSOP−8
DT SUFFIX
CASE 948R−02
MARKING DIAGRAMS*
8
8
8
KEL16
ALYW
G
HEL16
ALYW
G
Features
•
•
•
•
•
8
8
1
1
1
TSSOP−8
SOIC−8 NB
H
K
A
L
Y
W
G
KL16
ALYWG
G
= MC10
= MC100
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
D
3
6
Q
ORDERING INFORMATION
Device
VBB
4
5
MC10EL16DG
VEE
MC10EL16DR2G
Figure 1. Logic Diagram and Pinout Assignment
MC100EL16DG
SOIC−8 NB 98 Units / Tube
(Pb-Free)
2500 /
MC100EL16DR2G SOIC−8 NB
Tape & Reel
(Pb-Free)
2500 /
MC100EL16DTR2G TSSOP−8
Tape & Reel
(Pb-Free)
Table 1. PIN DESCRIPTION
PIN
FUNCTION
D, D
Q, Q
VBB
VCC
VEE
NC
ECL Data Inputs
ECL Data Outputs
Reference Voltage Output
Positive Supply
Negative Supply
No Connect
© Semiconductor Components Industries, LLC, 2016
April, 2021 − Rev. 10
Shipping†
SOIC−8 NB 98 Units / Tube
(Pb-Free)
2500 /
SOIC−8 NB
(Pb-Free) Tape & Reel
Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
1
Publication Order Number:
MC10EL16/D
MC10EL16, MC100EL16
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 KW
Internal Input Pullup Resistor
N/A
ESD Protection
Human Body Model
Machine Model
Charge Device Model
> 500 V
> 100 V
> 2 KV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
SOIC−8 NB
TSSOP−8
Pb-Free Pkg
Level 1
Level 3
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
47
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Rating
Units
VCC
PECL Mode Power Supply
Parameter
VEE = 0 V
Condition 1
Condition 2
8
V
VEE
NECL Mode Power Supply
VCC = 0 V
−8
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
6
−6
V
Iout
Output Current
Continuous
Surge
50
100
mA
IBB
VBB Sink/Source
±0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
SOIC−8 NB
SOIC−8 NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8 NB
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
TSSOP−8
41 to 44 ±5%
°C/W
Tsol
Wave Solder (Pb-Free)
< 2 to 3 sec @ 260°C
265
°C
VI ≤ VCC
VI ≥ VEE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
MC10EL16, MC100EL16
Table 4. 10EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1))
−40°C
Symbol
Characteristic
Min
Typ
25°C
Max
Min
Typ
85°C
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
18
22
18
22
18
22
mA
VOH
Output HIGH Voltage (Note 2)
3920
4010
4110
4020
4105
4190
4090
4185
4280
mV
VOL
Output LOW Voltage (Note 2)
3050
3200
3350
3050
3210
3370
3050
3227
3405
mV
VIH
Input HIGH Voltage (Single-Ended)
3770
4110
3870
4190
3940
4280
mV
VIL
Input LOW Voltage (Single-Ended)
3050
3500
3050
3520
3050
3555
mV
VBB
Output Voltage Reference
3.57
3.7
3.65
3.75
3.69
3.81
V
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 3)
2.5
4.6
2.5
4.6
2.5
4.6
V
150
mA
VIHCMR
IIH
Input HIGH Current
IIL
Input LOW Current
150
150
0.5
0.5
0.3
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input
signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V.
Table 5. 10EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1))
−40°C
Symbol
Characteristic
Typ
Max
18
22
−1080
−990
−890
Output LOW Voltage (Note 2)
−1950
−1800
−1650
VIH
Input HIGH Voltage (Single-Ended)
−1230
−890
VIL
Input LOW Voltage (Single-Ended)
−1950
−1500
VBB
Output Voltage Reference
−1.43
−1.30
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 3)
−2.5
−0.4
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
VOL
VIHCMR
IIH
Input HIGH Current
IIL
Input LOW Current
Min
25°C
Min
85°C
Typ
Max
18
22
−980
−895
−810
−1950
−1790
Typ
Max
Unit
18
22
mA
−910
−815
−720
mV
−1630
−1950
−1773
−1595
mV
−1130
−810
−1060
−720
mV
−1950
−1480
−1950
−1445
mV
−1.35
−1.25
−1.31
−1.19
V
−2.5
−0.4
−2.5
−0.4
V
150
mA
150
0.5
Min
150
0.5
0.3
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.25 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input
signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V.
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3
MC10EL16, MC100EL16
Table 6. 100EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V (Note 1))
−40°C
Symbol
Characteristic
Min
25°C
Typ
Max
18
22
Min
85°C
Typ
Max
18
22
Min
Typ
Max
Unit
21
26
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
3915
3995
4120
3975
4045
4120
3975
4050
4120
mV
VOL
Output LOW Voltage (Note 2)
3170
3305
3445
3190
3295
3380
3190
3295
3380
mV
VIH
Input HIGH Voltage (Single-Ended)
3835
4120
3835
4120
3835
4120
mV
VIL
Input LOW Voltage (Single-Ended)
3190
3525
3190
3525
3190
3525
mV
VBB
Output Voltage Reference
3.62
3.74
3.62
3.74
3.62
3.74
V
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 3)
2.5
4.6
2.5
4.6
2.5
4.6
V
150
mA
VIHCMR
IIH
Input HIGH Current
IIL
Input LOW Current
150
150
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input
signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin and 1 V.
Table 7. 100EL SERIES NECL DC CHARACTERISTICS (VCC = 0 V; VEE = −5.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
25°C
Typ
Max
18
22
Min
85°C
Typ
Max
18
22
Min
Typ
Max
Unit
21
26
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
−1085
−1005
−880
−1025
−955
−880
−1025
−955
−880
mV
VOL
Output LOW Voltage (Note 2)
−1830
−1695
−1555
−1810
−1705
−1620
−1810
−1705
−1620
mV
VIH
Input HIGH Voltage (Single-Ended)
−1165
−880
−1165
−880
−1165
−880
mV
VIL
Input LOW Voltage (Single-Ended)
−1810
−1475
−1810
−1475
−1810
−1475
mV
VBB
Output Voltage Reference
−1.38
−1.26
−1.38
−1.26
−1.38
−1.26
V
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 3)
−2.5
−0.4
−2.5
−0.4
−2.5
−0.4
V
150
mA
VIHCMR
IIH
Input HIGH Current
IIL
Input LOW Current
150
0.5
150
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal. Normal operation is obtained if the HIGH level falls within the specified range and the peak-to-peak voltage lies between VPPmin
and 1 V.
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4
MC10EL16, MC100EL16
Table 8. AC CHARACTERISTICS (VCC = 5.0 V; VEE = 0 V or VCC = 0 V; V EE= −5.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
fmax
Maximum Toggle Frequency
tPLH
tPHL
Propagation Delay to Output
(Diff)
(SE)
tSKEW
Duty Cycle Skew (Diff) (Note 2)
tJITTER
Random Clock Jitter (RMS)
VPP
tr
tf
25°C
Typ
Max
Min
85°C
Typ
Max
Min
Typ
Max
1.75
125
75
250
250
375
425
5
20
175
125
250
250
325
375
5
20
205
155
280
280
355
405
5
20
0.7
Input Swing (Note 3)
150
Output Rise/Fall Times Q (20%−80%)
100
1000
150
350
100
190
Unit
GHz
ps
ps
ps
190
1000
150
350
100
190
1000
mV
350
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. 10 Series: VEE can vary +0.25 V / −0.5 V.
100 Series: VEE can vary +0.8 V / −0.5 V.
2. Duty cycle skew is the difference between a tPLH and tPHL propagation delay through a device.
3. VPP(min) is minimum input swing for which AC parameters guaranteed. The device has a DC gain of ≈ 40.
Q
Zo = 50 W
D
Receiver
Device
Driver
Device
Q
D
Zo = 50 W
50 W
50 W
VTT
VTT = VCC − 2.0 V
Figure 2. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D − Termination of ECL Logic Devices)
Resource Reference of Application Notes
AN1405/D
− ECL Clock Distribution Techniques
AN1406/D
− Designing with PECL (ECL at +5.0 V)
AN1503/D
− ECLinPS I/O SPiCE Modeling Kit
AN1504/D
− Metastability and the ECLinPS Family
AN1568/D
− Interfacing Between LVDS and ECL
AN1672/D
− The ECL Translator Guide
AND8001/D
− Odd Number Counters Design
AND8002/D
− Marking and Date Codes
AND8020/D
− Termination of ECL Logic Devices
AND8066/D
− Interfacing with ECLinPS
AND8090/D
− AC Characteristics of ECL Devices
ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
8
1
SCALE 1:1
−X−
DATE 16 FEB 2011
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
8
8
1
1
IC
4.0
0.155
XXXXX
A
L
Y
W
G
IC
(Pb−Free)
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
XXXXXX
AYWW
1
1
Discrete
XXXXXX
AYWW
G
Discrete
(Pb−Free)
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1.270
0.050
SCALE 6:1
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
8
8
XXXXX
ALYWX
G
XXXXX
ALYWX
1.52
0.060
0.6
0.024
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
7.0
0.275
DIM
A
B
C
D
G
H
J
K
M
N
S
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
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the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−8 NB
CASE 751−07
ISSUE AK
DATE 16 FEB 2011
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
STYLE 2:
PIN 1. COLLECTOR, DIE, #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. BASE, #2
6. EMITTER, #2
7. BASE, #1
8. EMITTER, #1
STYLE 3:
PIN 1. DRAIN, DIE #1
2. DRAIN, #1
3. DRAIN, #2
4. DRAIN, #2
5. GATE, #2
6. SOURCE, #2
7. GATE, #1
8. SOURCE, #1
STYLE 4:
PIN 1. ANODE
2. ANODE
3. ANODE
4. ANODE
5. ANODE
6. ANODE
7. ANODE
8. COMMON CATHODE
STYLE 5:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. DRAIN
5. GATE
6. GATE
7. SOURCE
8. SOURCE
STYLE 6:
PIN 1. SOURCE
2. DRAIN
3. DRAIN
4. SOURCE
5. SOURCE
6. GATE
7. GATE
8. SOURCE
STYLE 7:
PIN 1. INPUT
2. EXTERNAL BYPASS
3. THIRD STAGE SOURCE
4. GROUND
5. DRAIN
6. GATE 3
7. SECOND STAGE Vd
8. FIRST STAGE Vd
STYLE 8:
PIN 1. COLLECTOR, DIE #1
2. BASE, #1
3. BASE, #2
4. COLLECTOR, #2
5. COLLECTOR, #2
6. EMITTER, #2
7. EMITTER, #1
8. COLLECTOR, #1
STYLE 9:
PIN 1. EMITTER, COMMON
2. COLLECTOR, DIE #1
3. COLLECTOR, DIE #2
4. EMITTER, COMMON
5. EMITTER, COMMON
6. BASE, DIE #2
7. BASE, DIE #1
8. EMITTER, COMMON
STYLE 10:
PIN 1. GROUND
2. BIAS 1
3. OUTPUT
4. GROUND
5. GROUND
6. BIAS 2
7. INPUT
8. GROUND
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 14:
PIN 1. N−SOURCE
2. N−GATE
3. P−SOURCE
4. P−GATE
5. P−DRAIN
6. P−DRAIN
7. N−DRAIN
8. N−DRAIN
STYLE 15:
PIN 1. ANODE 1
2. ANODE 1
3. ANODE 1
4. ANODE 1
5. CATHODE, COMMON
6. CATHODE, COMMON
7. CATHODE, COMMON
8. CATHODE, COMMON
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
STYLE 17:
PIN 1. VCC
2. V2OUT
3. V1OUT
4. TXE
5. RXE
6. VEE
7. GND
8. ACC
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
STYLE 19:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. MIRROR 2
7. DRAIN 1
8. MIRROR 1
STYLE 20:
PIN 1. SOURCE (N)
2. GATE (N)
3. SOURCE (P)
4. GATE (P)
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 21:
PIN 1. CATHODE 1
2. CATHODE 2
3. CATHODE 3
4. CATHODE 4
5. CATHODE 5
6. COMMON ANODE
7. COMMON ANODE
8. CATHODE 6
STYLE 22:
PIN 1. I/O LINE 1
2. COMMON CATHODE/VCC
3. COMMON CATHODE/VCC
4. I/O LINE 3
5. COMMON ANODE/GND
6. I/O LINE 4
7. I/O LINE 5
8. COMMON ANODE/GND
STYLE 23:
PIN 1. LINE 1 IN
2. COMMON ANODE/GND
3. COMMON ANODE/GND
4. LINE 2 IN
5. LINE 2 OUT
6. COMMON ANODE/GND
7. COMMON ANODE/GND
8. LINE 1 OUT
STYLE 24:
PIN 1. BASE
2. EMITTER
3. COLLECTOR/ANODE
4. COLLECTOR/ANODE
5. CATHODE
6. CATHODE
7. COLLECTOR/ANODE
8. COLLECTOR/ANODE
STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT
STYLE 26:
PIN 1. GND
2. dv/dt
3. ENABLE
4. ILIMIT
5. SOURCE
6. SOURCE
7. SOURCE
8. VCC
STYLE 29:
PIN 1. BASE, DIE #1
2. EMITTER, #1
3. BASE, #2
4. EMITTER, #2
5. COLLECTOR, #2
6. COLLECTOR, #2
7. COLLECTOR, #1
8. COLLECTOR, #1
STYLE 30:
PIN 1. DRAIN 1
2. DRAIN 1
3. GATE 2
4. SOURCE 2
5. SOURCE 1/DRAIN 2
6. SOURCE 1/DRAIN 2
7. SOURCE 1/DRAIN 2
8. GATE 1
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
STYLE 27:
PIN 1. ILIMIT
2. OVLO
3. UVLO
4. INPUT+
5. SOURCE
6. SOURCE
7. SOURCE
8. DRAIN
STYLE 28:
PIN 1. SW_TO_GND
2. DASIC_OFF
3. DASIC_SW_DET
4. GND
5. V_MON
6. VBULK
7. VBULK
8. VIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP 8
CASE 948R−02
ISSUE A
DATE 04/07/2000
SCALE 2:1
8x
0.15 (0.006) T U
0.10 (0.004)
S
2X
L/2
L
8
5
1
PIN 1
IDENT
0.15 (0.006) T U
K REF
T U
S
V
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
S
0.25 (0.010)
B
−U−
A
−V−
S
M
M
F
DETAIL E
C
0.10 (0.004)
−T− SEATING
PLANE
D
−W−
G
DETAIL E
DOCUMENT NUMBER:
DESCRIPTION:
98AON00236D
TSSOP 8
DIM
A
B
C
D
F
G
K
L
M
MILLIMETERS
MIN
MAX
2.90
3.10
2.90
3.10
0.80
1.10
0.05
0.15
0.40
0.70
0.65 BSC
0.25
0.40
4.90 BSC
0_
6_
INCHES
MIN
MAX
0.114
0.122
0.114
0.122
0.031
0.043
0.002
0.006
0.016
0.028
0.026 BSC
0.010
0.016
0.193 BSC
0_
6_
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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