3.3V/5V ECL 4-Input
OR/NOR
MC10EP01, MC100EP01
Description
The MC10EP01 is a 4-input OR/NOR gate. The device is
functionally equivalent to the EL01 device, LVEL01, and E101
(a quad version). With AC performance much faster than the LVEL01
device, the EP01 is ideal for applications requiring the fastest AC
performance available.
The 100 Series contains temperature compensation.
1
1
VCC = 3.0 V to 5.5 V with VEE = 0 V
NECL Mode Operating Range:
VCC = 0 V with VEE = −3.0 V to −5.5 V
Open Input Default State
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
MARKING DIAGRAMS*
8
8
1
KEP01
ALYW
G
1
SOIC−8 NB
K
5H
M
KP01
ALYWG
G
5H MG
G
• 230 ps Typical Propagation Delay
• Maximum Frequency = > 3 GHz Typical
• PECL Mode Operating Range:
•
•
8
8
SOIC−8 NB
TSSOP−8
DFN8
D SUFFIX
DT SUFFIX
MN SUFFIX
CASE 751−07 CASE 948R−02 CASE 506AA
Features
•
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1
TSSOP−8
= MC100
= MC10
= Date Code
A
L
Y
W
G
4
DFN8
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Device
Package
Shipping†
MC10EP01MNR4G
DFN8
(Pb-Free)
MC100EP01DG
SOIC−8
NB
(Pb-Free)
1000 /
Tape & Reel
98 Units / Tube
MC100EP01DTG
TSSOP−8 100 Units / Tube
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
March, 2021 − Rev. 11
1
Publication Order Number:
MC10EP01/D
MC10EP01, MC100EP01
Table 1. PIN DESCRIPTION
D0
D1
1
2
8
7
VCC
Pin
Q
D2
3
6
Q
D3
4
5
VEE
Function
D0 − D3
ECL Data Inputs
Q, Q
ECL Data Outputs
VCC
Positive Supply
VEE
Negative Supply
EP
(DFN8 only) Thermal exposed pad must be
connected to a sufficient thermal conduit. Electrically connect to the most negative supply
(GND) or leave unconnected, floating open.
Table 2. TRUTH TABLE
Figure 1. 8-Lead Pinout (Top View)
and Logic Diagram
D0*
D1*
D2*
D3*
Q
Q
L
L
L
L
L
H
H
X
X
X
H
L
X
H
X
X
H
L
X
X
H
X
H
L
X
X
X
H
H
L
H
H
H
H
H
L
*Pins will default LOW when left open.
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor
N/A
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 4 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Pb-Free Pkg
SOIC−8 NB
TSSOP−8
DFN8
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
115 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
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2
MC10EP01, MC100EP01
Table 4. MAXIMUM RATINGS
Symbol
Rating
Unit
VCC
PECL Mode Power Supply
Parameter
VEE = 0 V
Condition 1
Condition 2
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
−6
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
6
−6
V
Iout
Output Current
Continuous
Surge
50
100
mA
IBB
VBB Sink/Source
±0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
SOIC−8 NB
SOIC−8 NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8 NB
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
TSSOP−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
Tsol
Wave Solder (Pb-Free)
< 2 to 3 sec @ 260°C
265
°C
qJC
Thermal Resistance (Junction-to-Case)
(Note 2)
35 to 40
°C/W
VI ≤ VCC
VI ≥ VEE
DFN8
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
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MC10EP01, MC100EP01
Table 5. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1))
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
20
24
31
20
24
31
20
24
31
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 2)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (Single-Ended)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (Single-Ended)
1365
1690
1430
1755
1490
1815
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
150
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.
2. All loading with 50 W to VCC − 2.0 V.
Table 6. 10EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1))
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
20
24
31
20
24
31
20
24
31
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
3865
3990
4115
3930
4055
4180
3990
4115
4240
mV
VOL
Output LOW Voltage (Note 2)
3065
3190
3315
3130
3255
3380
3190
3315
3440
mV
VIH
Input HIGH Voltage (Single-Ended)
3790
4115
3855
4180
3915
4240
mV
VIL
Input LOW Voltage (Single-Ended)
3065
3390
3130
3455
3190
3515
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
150
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V.
2. All loading with 50 W to VCC − 2.0 V.
Table 7. 10EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1))
−40°C
Symbol
IEE
Characteristic
Power Supply Current
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
20
24
31
20
24
31
20
24
31
mA
VOH
Output HIGH Voltage (Note 2)
−1135
−1010
−885
−1070
−945
−820
−1010
−885
−760
mV
VOL
Output LOW Voltage (Note 2)
−1935
−1810
−1685
−1870
−1745
−1620
−1810
−1685
−1560
mV
VIH
Input HIGH Voltage (Single-Ended)
−1210
−885
−1145
−820
−1085
−760
mV
VIL
Input LOW Voltage (Single-Ended)
−1935
−1610
−1870
−1545
−1810
−1485
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
0.5
150
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC.
2. All loading with 50 W to VCC − 2.0 V.
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MC10EP01, MC100EP01
Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1))
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
15
24
32
17
26
36
19
28
38
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
2155
2280
2405
2155
2280
2405
2155
2280
2405
mV
VOL
Output LOW Voltage (Note 2)
1355
1480
1605
1355
1480
1605
1355
1480
1605
mV
VIH
Input HIGH Voltage (Single-Ended)
2075
2420
2075
2420
2075
2420
mV
VIL
Input LOW Voltage (Single-Ended)
1355
1675
1355
1675
1355
1675
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
150
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.
2. All loading with 50 W to VCC − 2.0 V.
Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1))
−40°C
Symbol
Characteristic
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
15
24
32
17
26
36
19
28
38
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
3855
3980
4105
3855
3980
4105
3855
3980
4105
mV
VOL
Output LOW Voltage (Note 2)
3055
3180
3305
3055
3180
3305
3055
3180
3305
mV
VIH
Input HIGH Voltage (Single-Ended)
3775
4120
3775
4120
3775
4120
mV
VIL
Input LOW Voltage (Single-Ended)
3055
3375
3055
3375
3055
3375
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
150
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V.
2. All loading with 50 W to VCC − 2.0 V.
Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1))
−40°C
25°C
85°C
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
15
24
32
17
26
36
19
28
38
mA
Output HIGH Voltage (Note 2)
−1145
−1020
−895
−1145
−1020
−895
−1145
−1020
−895
mV
VOL
Output LOW Voltage (Note 2)
−1945
−1820
−1695
−1945
−1820
−1695
−1945
−1820
−1695
mV
VIH
Input HIGH Voltage (Single-Ended)
−1225
−880
−1225
−880
−1225
−880
mV
VIL
Input LOW Voltage (Single-Ended)
−1945
−1625
−1945
−1625
−1945
−1625
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
Symbol
Characteristic
IEE
Power Supply Current
VOH
150
0.5
150
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC.
2. All loading with 50 W to VCC − 2.0 V.
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MC10EP01, MC100EP01
Table 11. AC CHARACTERISTICS (VCC = 3.0 V to 5.5 V; VEE = 0 V or VCC = 0 V; VEE = −3.0 V to −5.5 V (Note 1))
−40°C
Symbol
Min
Characteristic
fmax
Maximum Frequency
(See Figure 2. Fmax/JITTER)
tPLH,
tPHL
Propagation Delay
D to Q, Q
tJITTER
tr
tf
25°C
Typ
Max
Min
>3
150
Cycle-to-Cycle Jitter
(See Figure 2. Fmax/JITTER)
Output Rise/Fall Times
Q, Q (20%−80%)
50
85°C
Typ
Max
Min
>3
260
330
0.2
3
270
330
0.2
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