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MC100EP140D

MC100EP140D

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOICN-8_4.9X3.9MM

  • 描述:

    PHASE DETECTOR, ECL100K, PDSO8

  • 详情介绍
  • 数据手册
  • 价格&库存
MC100EP140D 数据手册
MC100EP140 3.3VECL Phase−Frequency Detector Description The MC100EP140 is a three state phase frequency−detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. Since the part is designed with fully differential internal gates, the noise is reduced throughout the circuit, especially at high speeds. The basic operation of a Phase/Frequency Detector (PFD) is to “compare” an incoming signal (feedback) to a set reference signal. When the Reference (R) and Feedback (FB) inputs are unequal in frequency and/or phase, the differential UP (U) and DOWN (D) outputs will provide pulse streams which, when subtracted and integrated, provide an error voltage for control of a VCO. Detector states of operation are shown in the Figure 2 and the State Table. The typical output amplitude of the EP140 is 400 mV, allowing faster switching time and greater bandwidth. For proper operation, the input edge rate of the R and FB inputs should be less than 5 ns. More information on Phase Lock Loop operation and application can be found in AND8040. The pinout is shown in Figure 1, the logic diagram in Figure 3, and the typical termination in Figure 5. Features • • • • • • • • • • • November, 2006 − Rev. 9 MARKING DIAGRAMS* 8 8 1 A L Y W G SOIC−8 D SUFFIX CASE 751 1 KP140 ALYW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 500 ps Typical Propagation Delay Maximum Frequency > 2.1 GHz Typical Fully Differential Internally Advanced High Band Output Swing of 400 mV Transfer Gain: 1.0 mV/Degree at 1.4 GHz 1.2 mV/Degree at 1.0 GHz Rise and Fall Time: 100 ps Typical The 100 Series Contains Temperature Compensation PECL Mode Operating Range: VCC = 3.0 V to 3.6 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −3.6 V Open Input Default State Pb−Free Packages are Available © Semiconductor Components Industries, LLC, 2006 http://onsemi.com 1 Publication Order Number: MC100EP140/D MC100EP140 VCC R FB VEE 8 7 6 5 1 2 3 4 U U D D Table 1. PIN DESCRIPTION PIN FUNCTION D, D Differential Down Outputs U, U Differential Up Outputs R* ECL Reference Input FB* ECL Feedback Input VCC Positive Supply VEE Negative Supply * Pins will default LOW when left open. Figure 1. 8−Lead Pinout (Top View) Table 2. STATE TABLE R 1 FB R Pump Down U=L D=H PHASE DETECTOR STATE 2 3 Pump Up U=L D=L FB U=H D=L R L L L L H L H 1−2 H L L L 2 L L L L 2 L L L L 2−3 H L H L 3−2 H H L L 2 L L L L U U C R U FF C A Reset D VEE B Reset FB D R B S D FF D L C A A S U PUMP UP 2−3−2 U Reset FB 2−1 FB A R OUTPUT PUMP DOWN 2−1−2 2 Figure 2. Phase Detector Logic Model R INPUT D Reset B B D Figure 3. Logic Diagram http://onsemi.com 2 D D MC100EP140 Table 3. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor 37.5 kW ESD Protection Human Body Model Machine Model Charged Device Model > 2 kV > 200 V > 2 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 Flammability Rating Oxygen Index: 28 to 34 Pb Pkg Pb−Free Pkg Level 1 Level 1 UL 94 V−0 @ 0.125 in Transistor Count 457 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. Table 4. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC PECL Mode Power Supply VEE = 0 V 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V V Iout Output Current Continuous Surge 50 100 mA mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm SOIC−8 SOIC−8 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board SOIC−8 41 to 44 °C/W Tsol Wave Solder 265 265 °C VI v VCC VI w VEE Pb Pb−Free Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 5. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 45 65 85 50 70 90 53 73 93 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 3) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 3) 1755 1880 2005 1755 1880 2005 1755 1880 2005 mV VIH Input HIGH Voltage (Single−Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single−Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −0.3 V. 3. All loading with 50 W to VCC − 2.0 V. http://onsemi.com 3 MC100EP140 Table 6. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −3.6 V to −3.0 V (Note 4) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 45 65 85 50 70 90 53 73 93 mA Output HIGH Voltage (Note 5) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 5) −1545 −1420 −1295 −1545 −1420 −1295 −1545 −1420 −1295 mV VIH Input HIGH Voltage (Single−Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single−Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 mA IIL Input LOW Current IEE Power Supply Current VOH 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Input and output parameters vary 1:1 with VCC. 5. All loading with 50 W to VCC − 2.0 V. Table 7. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −3.6 V or VCC = 3.0 V to 3.6 V; VEE = 0 V (Note 6) −40°C Symbol Characteristic Min fmax Maximum Frequency (Figure 4) tPLH, tPHL Propagation Delay to Output Differential tJITTER Cycle−to−Cycle Jitter (Figure 4) VPP Input Voltage Swing tr tf Output Rise/Fall Times (20% − 80%) Typ 25°C Max Min >2 R to U, FB to D FB to U, R to D 300 400 Q, Q Typ 85°C Max Min >2 450 600 6002 800 .2 2 475 650 625 850 .2
MC100EP140D
物料型号:MC100EP140

器件简介:MC100EP140是一款三态相位频率检测器,适用于需要最小相位和频率差异锁定的锁相环应用。该器件设计有全差分内部门,可降低噪声,特别是在高速应用中。

引脚分配:文档中提供了引脚分配图,包括VCC、VEE、FB、R、U、D等引脚,其中U和D为差分上升和下降输出,R为ECL参考输入,FB为ECL反馈输入。

参数特性:典型传播延迟为500皮秒,最大频率大于2.1 GHz,具有400毫伏的高级高带宽输出摆动,传输增益在1.4 GHz时为1.0 mV/度,在1.0 GHz时为1.2 mV/度,上升和下降时间典型值为100皮秒。

功能详解:相位/频率检测器(PFD)的基本操作是“比较”一个输入信号(反馈)与一个设定的参考信号。当参考(R)和反馈(FB)输入在频率和/或相位上不相等时,差分上升(U)和下降(D)输出将提供脉冲流,这些脉冲流在减去并积分后,提供用于控制压控振荡器(VCO)的误差电压。

应用信息:有关锁相环操作和应用的更多信息可以在AND8040中找到。

封装信息:提供SOIC-8封装,有铅和无铅两种选项。
MC100EP140D 价格&库存

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