MC100EP31DTG

MC10EP31, MC100EP31 3.3V / 5V ECL D Flip‐Flop with Set and Reset Description The MC10/100EP31 is a D flip-flop with set and reset. The device is pin and functionally equivalent to the EL31 and LVEL31 devices. With AC performance much faster than the EL31 and LVEL31 devices, the EP31 is ideal for applications requiring the fastest AC performance available. Both set and reset inputs are asynchronous, level triggered signals. Data enters the master portion of the flip-flop when CLK is low and is transferred to the slave, and thus the outputs, upon a positive transition of the CLK. The 100 Series contains temperature compensation. Features www.onsemi.com 8 8 1 1 SOIC−8 NB TSSOP−8 D SUFFIX DT SUFFIX CASE 751−07 CASE 948R−02 • 340 ps Typical Propagation Delay • Maximum Frequency = > 3 GHz Typical • PECL Mode Operating Range: DFN8 MN SUFFIX CASE 506AA MARKING DIAGRAMS* VCC = 0 V with VEE = −3.0 V to −5.5 V Open Input Default State • • Q Output Will Default LOW with Inputs Open or at VEE • These Devices are Pb-Free, Halogen Free and are RoHS Compliant HEP31 ALYW G 1 1 5O MG G 8 8 HP31 ALYWG G 1 KP31 ALYWG G 1 4 8 8 KEP31 ALYW G 1 1 SOIC−8 NB H K 5O 3J M = MC10 = MC100 = MC10 = MC100 = Date Code TSSOP−8 A L Y W G 3J MG G VCC = 3.0 V to 5.5 V with VEE = 0 V • NECL Mode Operating Range: 4 DFN8 = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 11 1 Publication Order Number: MC10EP31/D MC10EP31, MC100EP31 Table 1. PIN DESCRIPTION SET 1 8 VCC Pin S D 2 7 D Q Flip Flop CLK 3 6 Q R RESET 4 5 Function CLK* ECL Clock Inputs Reset* ECL Asynchronous Reset Set* ECL Asynchronous Set D* ECL Data Input Q, Q ECL Data Outputs VCC Positive Supply VEE Negative Supply EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. VEE *Pins will default LOW when left open. Figure 1. 8-Lead Pinout (Top View) and Logic Diagram Table 2. TRUTH TABLE D SET RESET CLK Q L H X X X L L H L H L L L H H Z Z X X X L H H L UNDEF Z = LOW to HIGH Transition Table 3. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor N/A ESD Protection Human Body Model Machine Model Charged Device Model > 4 kV > 200 V > 2 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 NB TSSOP−8 DFN8 Flammability Rating Pb-Free Pkg Level 1 Level 3 Level 1 Oxygen Index: 28 to 34 Transistor Count UL 94 V−0 @ 0.125 in 75 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. www.onsemi.com 2 MC10EP31, MC100EP31 Table 4. MAXIMUM RATINGS Symbol Rating Unit VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C qJC Thermal Resistance (Junction-to-Case) (Note 2) 35 to 40 °C/W VI ≤ VCC VI ≥ VEE DFN8 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) www.onsemi.com 3 MC10EP31, MC100EP31 Table 5. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 26 34 44 26 35 45 28 37 47 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1430 1755 1490 1815 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. Table 6. 10EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 26 34 44 26 35 45 28 37 47 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 2) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single-Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single-Ended) 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. Table 7. 10EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol IEE Characteristic Power Supply Current 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 26 34 44 26 35 45 28 37 47 mA VOH Output HIGH Voltage (Note 2) −1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV VOL Output LOW Voltage (Note 2) −1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV VIH Input HIGH Voltage (Single-Ended) −1210 −885 −1145 −820 −1085 −760 mV VIL Input LOW Voltage (Single-Ended) −1935 −1610 −1870 −1545 −1810 −1485 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 4 MC10EP31, MC100EP31 Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 26 34 44 26 35 45 28 37 47 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 2) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single-Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single-Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 26 34 44 26 35 45 28 37 47 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 2) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single-Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single-Ended) 3055 3375 3055 3375 3055 3375 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 26 34 44 26 35 45 28 37 47 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 2) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single-Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single-Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 5 MC10EP31, MC100EP31 Table 11. AC CHARACTERISTICS (VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 1)) −40°C Characteristic Symbol Min Typ 25°C Max Min 85°C Max Min Typ >3 Max >3 Unit fmax Maximum Frequency (Figure 2) tPLH, tPHL Propagation Delay to Output Differential CLK to Q, Q S, R to Q, Q 250 300 tRR Set/Reset Recovery 225 225 225 ps tS tH Setup Time Hold Time 100 150 100 150 100 150 ps tPW Minimum Pulse width SET, RESET 550 tJITTER Cycle-to-Cycle Jitter (Figure 2) tr tf >3 Typ GHz ps 330 380 400 450 270 330 340 400 410 470 300 360 370 430 440 500 ps Output Rise/Fall Times Q, Q (20% − 80%) 450 550 0.2