MC100EPT25
-3.3V / -5V Differential
ECL to +3.3V LVTTL
Translator
Description
The MC100EPT25 is a Differential ECL to LVTTL translator. This
device requires +3.3 V, −3.3 V to −5.2 V, and ground. The small
outline 8-lead package and the single gate of the EPT25 make it ideal
for applications which require the translation of a clock or data signal.
The VBB output allows the EPT25 to also be used in a single-ended
input mode. In this mode the VBB output is tied to the D input for
a inverting buffer or the D input for a non-inverting buffer. If used, the
VBB pin should be bypassed to ground with at least a 0.01 mF
capacitor.
www.onsemi.com
8
8
1
1
SOIC−8 NB
D SUFFIX
CASE
751−07
TSSOP−8
DT SUFFIX
CASE
948R−02
DFN−8
MN SUFFIX
CASE 506AA
Features
• 1.1 ns Typical Propagation Delay
• Maximum Frequency > 275 MHz Typical
• Operating Range:
8
8
♦ VCC = 3.0 V to 3.6 V; VEE = −5.5 V to −3.0 V; GND = 0 V
24 mA TTL Outputs
Q Output Will Default LOW with Inputs Open or at VEE
VBB Output
Open Input Default State
Safety Clamp on Inputs
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
1
KPT25
ALYW
G
1
A
L
Y
W
M
G
3V MG
G
•
•
•
•
•
•
MARKING DIAGRAMS*
KA25
ALYWG
G
1
4
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Package
Shipping†
MC100EPT25DG
SOIC−8 NB
(Pb-Free)
98 Units/Tube
MC100EPT25DR2G
SOIC−8 NB
(Pb-Free)
2500/Tape & Reel
MC100EPT25DTG
TSSOP−8
(Pb-Free)
100 Units/Tube
MC100EPT25DTR2G
TSSOP−8
(Pb-Free)
2500/Tape & Reel
MC100EPT25MNR4G
DFN−8
(Pb-Free)
1000/Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 17
1
Publication Order Number:
MC100EPT25/D
MC100EPT25
Table 1. PIN DESCRIPTION
VEE
D
D
1
8
LVTTL
2
3
7
6
VCC
PIN
Q
NC
LVECL/ECL
VBB
4
5
GND
Figure 1. 8-Lead Pinout (Top View) and Logic Diagram
FUNCTION
Q
LVTTL Output
D*, D*
Differential ECL Input Pair
VCC
Positive Supply
VBB
Output Reference Voltage
GND
Ground
VEE
Negative Supply
NC
No Connect
EP
(DFN8 only) Thermal exposed pad
must be connected to a sufficient
thermal conduit. Electrically connect
to the most negative supply (GND) or
leave unconnected, floating open.
* Pins will default LOW when left open.
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor
N/A
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 4 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
SOIC−8 NB
TSSOP−8
DFN−8
Pb-Free Pkg
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL−94 V−0 @ 0.125 in
Transistor Count
111 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
www.onsemi.com
2
MC100EPT25
Table 3. MAXIMUM RATINGS
Symbol
Rating
Unit
VCC
Positive Power Supply
Parameter
GND = 0 V
Condition 1
VEE = −5.0 V
Condition 2
3.8
V
VEE
Negative Power Supply
GND = 0 V
VCC = +3.3 V
−6
V
VIN
Input Voltage
GND = 0 V
0 to VEE
V
IBB
VBB Sink/Source
± 0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
SOIC−8 NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8 NB
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
TSSOP−8
185
140
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
TSSOP−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
DFN−8
129
84
°C/W
Tsol
Wave Solder (Pb-Free)
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