5 V ECL 2‐Input AND/NAND
MC10EL04, MC100EL04
Description
The MC10EL/100EL04 is a 2-input AND/NAND gate. The device
is functionally equivalent to the E104 device with higher performance
capabilities. With propagation delays and output transition times
significantly faster than the E104, the EL04 is ideally suited for those
applications which require the ultimate in AC performance.
The 100 Series contains temperature compensation.
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8
Features
1
• 240 ps Propagation Delay
• ESD Protection:
> 1 kV Human Body Model
♦ > 100 V Machine Model
PECL Mode Operating Range: VCC = 4.2 V to 5.7 V
with VEE = 0 V
NECL Mode Operating Range: VCC = 0 V
with VEE = −4.2 V to −5.7 V
Internal Input Pulldown Resistors
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
Moisture Sensitivity:
♦ Level 1 for SOIC−8 NB
♦ For Additional Information, see Application Note AND8003/D
Flammability Rating: UL 94 V−0 @ 0.125, Oxygen Index 28 to 34
Transistor Count = 45 Devices
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
SOIC−8 NB
D SUFFIX
CASE 751−07
♦
•
•
•
•
•
•
•
•
MARKING DIAGRAMS*
8
HEL04
ALYW
1
8
KEL04
ALYW
1
SOIC−8 NB
H = MC10
K = MC100
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2016
March, 2021 − Rev. 8
1
Package
Shipping
MC10EL04DG
SOIC−8 NB
(Pb-Free)
98 Units/Tube
MC100EL04DG
SOIC−8 NB
(Pb-Free)
98 Units/Tube
Publication Order Number:
MC10EL04/D
MC10EL04, MC100EL04
NC
1
8
VCC
Table 1. PIN DESCRIPTION
PIN
D0, D1
Q, Q
VCC
VEE
NC
D0
2
7
Q
D1
3
6
Q
NC
4
5
VEE
FUNCTION
ECL Data Inputs
ECL Data Outputs
Positive Supply
Negative Supply
No Connect
Figure 1. Logic Diagram and Pinout
Table 2. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VCC
PECL Mode Power Supply
VEE = 0 V
8
V
VEE
NECL Mode Power Supply
VCC = 0 V
−8
V
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
VEE = 0 V
VCC = 0 V
6
−6
V
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction-to-Ambient)
0 lfpm
500 lfpm
SOIC−8 NB
SOIC−8 NB
190
130
°C/W
qJC
Thermal Resistance (Junction-to-Case)
Standard Board
SOIC−8 NB
41 to 44
°C/W
Tsol
Wave Solder (Pb-Free)
< 2 to 3 sec @ 260°C
265
°C
VI ≤ VCC
VI ≥ VEE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. 10EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
25°C
Typ
Max
14
17
Min
85°C
Typ
Max
14
17
Min
Typ
Max
Unit
14
17
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
3920
4010
4110
4020
4105
4190
4090
4185
4280
mV
VOL
Output LOW Voltage (Note 2)
3050
3200
3350
3050
3210
3370
3050
3227
3405
mV
VIH
Input HIGH Voltage
3770
4110
3870
4190
3940
4280
mV
VIL
Input LOW Voltage
3050
3500
3050
3520
3050
3555
mV
IIH
Input HIGH Current
D0
D1
IIL
Input LOW Current
250
150
0.5
250
150
0.5
250
150
0.3
mA
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC.
VEE can vary +0.25 V / −0.5 V for +25°C and +85°C or VEE can vary +0.06 V / −0.5 V for −40°C.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
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2
MC10EL04, MC100EL04
Table 4. 10EL SERIES NECL DC CHARACTERISTICS (VCC = 0.0 V; VEE = −5.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
25°C
Typ
Max
14
17
Min
85°C
Typ
Max
14
17
Min
Typ
Max
Unit
14
17
mA
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 2)
−1080
−990
−890
−980
−895
−810
−910
−815
−720
mV
VOL
Output LOW Voltage (Note 2)
−1950
−1800
−1650
−1950
−1790
−1630
−1950
−1773
−1595
mV
VIH
Input HIGH Voltage
−1230
−890
−1130
−810
−1060
−720
mV
VIL
Input LOW Voltage
−1950
−1500
−1950
−1480
−1950
−1445
mV
IIH
Input HIGH Current
D0
D1
IIL
Input LOW Current
250
150
0.5
250
150
0.5
250
150
0.3
mA
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC.
VEE can vary +0.25 V / −0.5 V for +25°C and +85°C or VEE can vary +0.06 V / −0.5 V for −40°C.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 5. 100EL SERIES PECL DC CHARACTERISTICS (VCC = 5.0 V; VEE = 0.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
Typ
25°C
Max
Min
Typ
85°C
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
14
17
14
17
16
20
mA
VOH
Output HIGH Voltage (Note 2)
3915
3995
4120
3975
4045
4120
3975
4050
4120
mV
VOL
Output LOW Voltage (Note 2)
3170
3305
3445
3190
3295
3380
3190
3295
3380
mV
VIH
Input HIGH Voltage
3835
4120
3835
4120
3835
4120
mV
VIL
Input LOW Voltage
3190
3525
3190
3525
3190
3525
mV
IIH
Input HIGH Current
D0
D1
IIL
Input LOW Current
250
150
0.5
250
150
0.5
250
150
0.5
mA
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 6. 100EL SERIES NECL DC CHARACTERISTICS (VCC = 0.0 V; VEE = −5.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
Typ
25°C
Max
Min
Typ
85°C
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
14
17
14
17
16
20
mA
VOH
Output HIGH Voltage (Note 2)
−1085
−1005
−880
−1025
−955
−880
−1025
−955
−880
mV
VOL
Output LOW Voltage (Note 2)
−1830
−1695
−1555
−1810
−1705
−1620
−1810
−1705
−1620
mV
VIH
Input HIGH Voltage
−1165
−880
−1165
−880
−1165
−880
mV
VIL
Input LOW Voltage
−1810
−1475
−1810
−1475
−1810
−1475
mV
IIH
Input HIGH Current
D0
D1
IIL
Input LOW Current
250
150
0.5
250
150
0.5
250
150
0.5
mA
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.8 V / −0.5 V.
2. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
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3
MC10EL04, MC100EL04
Table 7. AC CHARACTERISTICS (VCC = 5.0 V; VEE = 0.0 V or VCC = 0.0 V; VEE= −5.0 V (Note 1))
−40°C
Symbol
Characteristic
Min
fmax
Maximum Toggle Frequency
tPLH
tPHL
Propagation Delay to
Output
tJITTER
Cycle-to-Cycle Jitter
tr
tf
Typ
25°C
Max
Min
TBD
70
235
100
225
Typ
Max
Min
TBD
410
130
TBD
Output Rise/Fall Times Q (20%−80%)
85°C
100
Max
TBD
240
370
155
TBD
350
Typ
265
GHz
395
TBD
225
350
100
225
Unit
ps
ps
350
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
1. 10 Series: VEE can vary +0.25 V / −0.5 V for +25°C and +85°C. or VEE can vary +0.06 V / −0.5 V for −40°C.
100 Series: VEE can vary +0.8 V / −0.5 V.
Q
Zo = 50 W
D
Receiver
Device
Driver
Device
Q
D
Zo = 50 W
50 W
50 W
VTT
VTT = VCC − 2.0 V
Figure 2. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D − Termination of ECL Logic Devices)
Resource Reference of Application Notes
AN1405/D
− ECL Clock Distribution Techniques
AN1406/D
− Designing with PECL (ECL at +5.0 V)
AN1503/D
− ECLinPS I/O SPiCE Modeling Kit
AN1504/D
− Metastability and the ECLinPS Family
AN1568/D
− Interfacing Between LVDS and ECL
AN1672/D
− The ECL Translator Guide
AND8001/D
− Odd Number Counters Design
AND8002/D
− Marking and Date Codes
AND8020/D
− Termination of ECL Logic Devices
AND8066/D
− Interfacing with ECLinPS
AND8090/D
− AC Characteristics of ECL Devices
ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
8
1
SCALE 1:1
−X−
DATE 16 FEB 2011
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
8
8
1
1
IC
4.0
0.155
XXXXX
A
L
Y
W
G
IC
(Pb−Free)
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
XXXXXX
AYWW
1
1
Discrete
XXXXXX
AYWW
G
Discrete
(Pb−Free)
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1.270
0.050
SCALE 6:1
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
8
8
XXXXX
ALYWX
G
XXXXX
ALYWX
1.52
0.060
0.6
0.024
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
7.0
0.275
DIM
A
B
C
D
G
H
J
K
M
N
S
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−8 NB
CASE 751−07
ISSUE AK
DATE 16 FEB 2011
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
STYLE 2:
PIN 1. COLLECTOR, DIE, #1
2. COLLECTOR, #1
3. COLLECTOR, #2
4. COLLECTOR, #2
5. BASE, #2
6. EMITTER, #2
7. BASE, #1
8. EMITTER, #1
STYLE 3:
PIN 1. DRAIN, DIE #1
2. DRAIN, #1
3. DRAIN, #2
4. DRAIN, #2
5. GATE, #2
6. SOURCE, #2
7. GATE, #1
8. SOURCE, #1
STYLE 4:
PIN 1. ANODE
2. ANODE
3. ANODE
4. ANODE
5. ANODE
6. ANODE
7. ANODE
8. COMMON CATHODE
STYLE 5:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. DRAIN
5. GATE
6. GATE
7. SOURCE
8. SOURCE
STYLE 6:
PIN 1. SOURCE
2. DRAIN
3. DRAIN
4. SOURCE
5. SOURCE
6. GATE
7. GATE
8. SOURCE
STYLE 7:
PIN 1. INPUT
2. EXTERNAL BYPASS
3. THIRD STAGE SOURCE
4. GROUND
5. DRAIN
6. GATE 3
7. SECOND STAGE Vd
8. FIRST STAGE Vd
STYLE 8:
PIN 1. COLLECTOR, DIE #1
2. BASE, #1
3. BASE, #2
4. COLLECTOR, #2
5. COLLECTOR, #2
6. EMITTER, #2
7. EMITTER, #1
8. COLLECTOR, #1
STYLE 9:
PIN 1. EMITTER, COMMON
2. COLLECTOR, DIE #1
3. COLLECTOR, DIE #2
4. EMITTER, COMMON
5. EMITTER, COMMON
6. BASE, DIE #2
7. BASE, DIE #1
8. EMITTER, COMMON
STYLE 10:
PIN 1. GROUND
2. BIAS 1
3. OUTPUT
4. GROUND
5. GROUND
6. BIAS 2
7. INPUT
8. GROUND
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 13:
PIN 1. N.C.
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 14:
PIN 1. N−SOURCE
2. N−GATE
3. P−SOURCE
4. P−GATE
5. P−DRAIN
6. P−DRAIN
7. N−DRAIN
8. N−DRAIN
STYLE 15:
PIN 1. ANODE 1
2. ANODE 1
3. ANODE 1
4. ANODE 1
5. CATHODE, COMMON
6. CATHODE, COMMON
7. CATHODE, COMMON
8. CATHODE, COMMON
STYLE 16:
PIN 1. EMITTER, DIE #1
2. BASE, DIE #1
3. EMITTER, DIE #2
4. BASE, DIE #2
5. COLLECTOR, DIE #2
6. COLLECTOR, DIE #2
7. COLLECTOR, DIE #1
8. COLLECTOR, DIE #1
STYLE 17:
PIN 1. VCC
2. V2OUT
3. V1OUT
4. TXE
5. RXE
6. VEE
7. GND
8. ACC
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. CATHODE
8. CATHODE
STYLE 19:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. MIRROR 2
7. DRAIN 1
8. MIRROR 1
STYLE 20:
PIN 1. SOURCE (N)
2. GATE (N)
3. SOURCE (P)
4. GATE (P)
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
STYLE 21:
PIN 1. CATHODE 1
2. CATHODE 2
3. CATHODE 3
4. CATHODE 4
5. CATHODE 5
6. COMMON ANODE
7. COMMON ANODE
8. CATHODE 6
STYLE 22:
PIN 1. I/O LINE 1
2. COMMON CATHODE/VCC
3. COMMON CATHODE/VCC
4. I/O LINE 3
5. COMMON ANODE/GND
6. I/O LINE 4
7. I/O LINE 5
8. COMMON ANODE/GND
STYLE 23:
PIN 1. LINE 1 IN
2. COMMON ANODE/GND
3. COMMON ANODE/GND
4. LINE 2 IN
5. LINE 2 OUT
6. COMMON ANODE/GND
7. COMMON ANODE/GND
8. LINE 1 OUT
STYLE 24:
PIN 1. BASE
2. EMITTER
3. COLLECTOR/ANODE
4. COLLECTOR/ANODE
5. CATHODE
6. CATHODE
7. COLLECTOR/ANODE
8. COLLECTOR/ANODE
STYLE 25:
PIN 1. VIN
2. N/C
3. REXT
4. GND
5. IOUT
6. IOUT
7. IOUT
8. IOUT
STYLE 26:
PIN 1. GND
2. dv/dt
3. ENABLE
4. ILIMIT
5. SOURCE
6. SOURCE
7. SOURCE
8. VCC
STYLE 29:
PIN 1. BASE, DIE #1
2. EMITTER, #1
3. BASE, #2
4. EMITTER, #2
5. COLLECTOR, #2
6. COLLECTOR, #2
7. COLLECTOR, #1
8. COLLECTOR, #1
STYLE 30:
PIN 1. DRAIN 1
2. DRAIN 1
3. GATE 2
4. SOURCE 2
5. SOURCE 1/DRAIN 2
6. SOURCE 1/DRAIN 2
7. SOURCE 1/DRAIN 2
8. GATE 1
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42564B
SOIC−8 NB
STYLE 27:
PIN 1. ILIMIT
2. OVLO
3. UVLO
4. INPUT+
5. SOURCE
6. SOURCE
7. SOURCE
8. DRAIN
STYLE 28:
PIN 1. SW_TO_GND
2. DASIC_OFF
3. DASIC_SW_DET
4. GND
5. V_MON
6. VBULK
7. VBULK
8. VIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
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TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative