MC10EP01DTG

3.3V/5V ECL 4-Input OR/NOR MC10EP01, MC100EP01 Description The MC10EP01 is a 4-input OR/NOR gate. The device is functionally equivalent to the EL01 device, LVEL01, and E101 (a quad version). With AC performance much faster than the LVEL01 device, the EP01 is ideal for applications requiring the fastest AC performance available. The 100 Series contains temperature compensation. 1 1 VCC = 3.0 V to 5.5 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −5.5 V Open Input Default State These Devices are Pb-Free, Halogen Free and are RoHS Compliant MARKING DIAGRAMS* 8 8 1 KEP01 ALYW G 1 SOIC−8 NB K 5H M KP01 ALYWG G 5H MG G • 230 ps Typical Propagation Delay • Maximum Frequency = > 3 GHz Typical • PECL Mode Operating Range: • • 8 8 SOIC−8 NB TSSOP−8 DFN8 D SUFFIX DT SUFFIX MN SUFFIX CASE 751−07 CASE 948R−02 CASE 506AA Features • www.onsemi.com 1 TSSOP−8 = MC100 = MC10 = Date Code A L Y W G 4 DFN8 = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION Device Package Shipping† MC10EP01MNR4G DFN8 (Pb-Free) MC100EP01DG SOIC−8 NB (Pb-Free) 1000 / Tape & Reel 98 Units / Tube MC100EP01DTG TSSOP−8 100 Units / Tube (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 March, 2021 − Rev. 11 1 Publication Order Number: MC10EP01/D MC10EP01, MC100EP01 Table 1. PIN DESCRIPTION D0 D1 1 2 8 7 VCC Pin Q D2 3 6 Q D3 4 5 VEE Function D0 − D3 ECL Data Inputs Q, Q ECL Data Outputs VCC Positive Supply VEE Negative Supply EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. Table 2. TRUTH TABLE Figure 1. 8-Lead Pinout (Top View) and Logic Diagram D0* D1* D2* D3* Q Q L L L L L H H X X X H L X H X X H L X X H X H L X X X H H L H H H H H L *Pins will default LOW when left open. Table 3. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor N/A ESD Protection Human Body Model Machine Model Charged Device Model > 4 kV > 200 V > 2 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb-Free Pkg SOIC−8 NB TSSOP−8 DFN8 Level 1 Level 3 Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 115 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. www.onsemi.com 2 MC10EP01, MC100EP01 Table 4. MAXIMUM RATINGS Symbol Rating Unit VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA IBB VBB Sink/Source ±0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C qJC Thermal Resistance (Junction-to-Case) (Note 2) 35 to 40 °C/W VI ≤ VCC VI ≥ VEE DFN8 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) www.onsemi.com 3 MC10EP01, MC100EP01 Table 5. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 24 31 20 24 31 20 24 31 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1430 1755 1490 1815 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. Table 6. 10EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 24 31 20 24 31 20 24 31 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 2) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single-Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single-Ended) 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. Table 7. 10EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol IEE Characteristic Power Supply Current 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 24 31 20 24 31 20 24 31 mA VOH Output HIGH Voltage (Note 2) −1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV VOL Output LOW Voltage (Note 2) −1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV VIH Input HIGH Voltage (Single-Ended) −1210 −885 −1145 −820 −1085 −760 mV VIL Input LOW Voltage (Single-Ended) −1935 −1610 −1870 −1545 −1810 −1485 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 4 MC10EP01, MC100EP01 Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 15 24 32 17 26 36 19 28 38 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 2) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single-Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single-Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 15 24 32 17 26 36 19 28 38 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 2) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single-Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single-Ended) 3055 3375 3055 3375 3055 3375 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1)) −40°C 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 15 24 32 17 26 36 19 28 38 mA Output HIGH Voltage (Note 2) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 2) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single-Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single-Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 mA IIL Input LOW Current Symbol Characteristic IEE Power Supply Current VOH 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 5 MC10EP01, MC100EP01 Table 11. AC CHARACTERISTICS (VCC = 3.0 V to 5.5 V; VEE = 0 V or VCC = 0 V; VEE = −3.0 V to −5.5 V (Note 1)) −40°C Symbol Min Characteristic fmax Maximum Frequency (See Figure 2. Fmax/JITTER) tPLH, tPHL Propagation Delay D to Q, Q tJITTER tr tf 25°C Typ Max Min >3 150 Cycle-to-Cycle Jitter (See Figure 2. Fmax/JITTER) Output Rise/Fall Times Q, Q (20%−80%) 50 85°C Typ Max Min >3 260 330 0.2 3 270 330 0.2