MC10EP33DTR2G

3.3V/5V ECL B4 Divider MC10EP33, MC100EP33 Description The MC10/100EP33 is an integrated B4 divider. The differential clock inputs. The VBB pin, an internally generated voltage supply, is available to this device only. For single-ended input conditions, the unused differential input is connected to VBB as a switching reference voltage. VBB may also rebias AC coupled inputs. When used, decouple VBB and VCC via a 0.01 mF capacitor and limit current sourcing or sinking to 0.5 mA. When not used, VBB should be left open. The reset pin is asynchronous and is asserted on the rising edge. Upon powerup, the internal flip-flops will attain a random state; the reset allows for the synchronization of multiple EP33’s in a system. The 100 Series contains temperature compensation. www.onsemi.com 8 8 1 1 SOIC−8 NB TSSOP−8 D SUFFIX DT SUFFIX CASE 751−07 CASE 948R−02 DFN8 MN SUFFIX CASE 506AA Features • 320 ps Propagation Delay • Maximum Frequency = > 4 GHz Typical • PECL Mode Operating Range: • • • • • VCC = 3.0 V to 5.5 V with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −5.5 V Open Input Default State 8 8 1 Safety Clamp on Inputs HEP33 ALYW G 1 8 8 Q Output Will Default LOW with Inputs Open or at VEE VBB Output These Devices are Pb-Free, Halogen Free and are RoHS Compliant 1 HP33 ALYWG G KEP33 ALYW G 1 SOIC−8 NB KP33 ALYWG G TSSOP−8 3L MG G • MARKING DIAGRAMS* 1 4 DFN8 H = MC10 A = Assembly Location K = MC100 L = Wafer Lot Y = Year W = Work Week 3L = MC100 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2021 − Rev. 12 1 Publication Order Number: MC10EP33/D MC10EP33, MC100EP33 Table 1. PIN DESCRIPTION PIN RESET 1 8 VCC R CLK 2 7 Q B4 CLK VBB 3 6 4 5 Q FUNCTION CLK*, CLK* ECL Clock Inputs Reset* ECL Asynchronous Reset VBB Reference Voltage Output Q, Q ECL Data Outputs VCC Positive Supply VEE Negative Supply EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. VEE * Pins will default LOW when left open. Table 2. TRUTH TABLE Figure 1. 8-Lead Pinout (Top View) and Logic Diagram CLK CLK RESET Q Q X Z X Z Z L L F H F Z = LOW to HIGH Transition Z = HIGH to LOW Transition F = Divide by 4 Function CLK tRR RESET Q Figure 2. Timing Diagram Table 3. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor NA ESD Protection Human Body Model Machine Model Charged Device Model > 4 kV > 200 V > 2 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb-Free Pkg SOIC−8 NB TSSOP−8 DFN8 Level 1 Level 3 Level 1 Flammability Rating Oxygen Index: 28 to 34 UL−94 V−0 @ 0.125 in Transistor Count 91 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. www.onsemi.com 2 MC10EP33, MC100EP33 Table 4. MAXIMUM RATINGS Symbol Rating Unit VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA IBB VBB Sink/Source ±0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W Tsol Wave Solder < 2 to 3 sec @ 248°C 265 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W qJC Thermal Resistance (Junction-to-Case) (Note 2) DFN8 35 to 40 °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C VI ≤ VCC VI ≥ VEE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 5. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 18 26 40 18 26 40 18 26 40 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1430 1755 1490 1815 mV VBB Output Voltage Reference 1790 1990 1855 2055 1915 2115 mV 3.3 2.0 3.3 2.0 3.3 V 150 mA VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) IIH Input HIGH Current IIL Input LOW Current 1890 2.0 150 0.5 1955 150 0.5 0.5 2015 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. www.onsemi.com 3 MC10EP33, MC100EP33 Table 6. 10EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 18 26 40 18 26 40 18 26 40 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 2) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single-Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single-Ended) 3065 3390 3130 3455 3190 3515 mV VBB Output Voltage Reference 3490 3690 3555 3755 3615 3815 mV 5.0 2.0 5.0 2.0 5.0 V 150 mA VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) IIH Input HIGH Current IIL Input LOW Current 3590 2.0 3655 150 0.5 3715 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 7. 10EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol IEE Characteristic Typ Max Min Typ 85°C Max Min Typ Max Unit 18 26 40 18 26 40 18 26 40 mA VOH Output HIGH Voltage (Note 2) −1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV VOL Output LOW Voltage (Note 2) −1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV VIH Input HIGH Voltage (Single-Ended) −1210 −885 −1145 −820 −1085 −760 mV VIL Input LOW Voltage (Single-Ended) −1935 −1610 −1870 −1545 −1810 −1485 mV VBB Output Voltage Reference −1510 −1310 −1445 −1245 −1385 −1185 mV 0.0 V 150 mA VIHCMR Power Supply Current Min 25°C Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) IIH Input HIGH Current IIL Input LOW Current −1410 VEE+2.0 0.0 VEE+2.0 150 0.5 −1345 0.0 VEE+2.0 150 0.5 −1285 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. www.onsemi.com 4 MC10EP33, MC100EP33 Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 18 26 40 23 26 45 23 26 45 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 2) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single-Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single-Ended) 1355 1675 1355 1675 1355 1675 mV VBB Output Voltage Reference 1775 1975 1775 1975 1775 1975 mV 3.3 2.0 3.3 2.0 3.3 V 150 mA VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) IIH Input HIGH Current IIL Input LOW Current 1875 2.0 1875 150 0.5 1875 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 18 26 40 23 26 45 23 26 45 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 2) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single-Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single-Ended) 3055 3375 3055 3375 3055 3375 mV VBB Output Voltage Reference 3475 3675 3475 3675 3475 3675 mV 5.0 2.0 5.0 2.0 5.0 V 150 mA VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) IIH Input HIGH Current IIL Input LOW Current 3575 2.0 150 0.5 3575 150 0.5 0.5 3575 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. www.onsemi.com 5 MC10EP33, MC100EP33 Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 18 26 40 23 26 45 23 26 45 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 2) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single-Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single-Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV VBB Output Voltage Reference −1525 −1325 −1525 −1325 −1525 −1325 mV 0.0 V 150 mA VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) IIH Input HIGH Current IIL Input LOW Current −1425 VEE+2.0 0.0 −1425 VEE+2.0 150 0.5 0.0 −1425 VEE+2.0 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 11. AC CHARACTERISTICS (VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 1)) −40°C Min Symbol Characteristic VOPP Output Voltage Amplitude (See Figure 4) fin < 4.0 GHz fin < 4.5 GHz tPLH, tPHL Propagation Delay to CLK/Q Output Differential RESET/Q tRR Set/Rest Recovery tPW Minimum Pulse width tJITTER Random Clock Jitter (RMS) VPP Input Voltage Swing (Differential Configuration) tr tf Output Rise/Fall Times Q, Q (20%−80%) RESET Typ 25°C Max Min 700 600 Typ 85°C Max Min 700 600 Typ Max mV 700 600 300 380 440 300 380 440 320 400 460 370 420 470 370 420 470 400 450 500 150 100 200 100 200 100 550 480 550 480 550 480 0.2 2 150 800 1200 90 170 200 0.2 2 150 800 1200 100 180 250 Unit ps ps ps 0.2 2 ps 150 800 1200 mV 120 200 280 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 6 MC10EP33, MC100EP33 Zo = 50 W Q D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 3. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices) 900 VOPP, OUTPUT VOLTAGE (mV) 800 700 600 500 400 300 200 100 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 fin, INPUT FREQUENCY (MHz) Figure 4. Input Frequency (fin) versus Output Voltage (VOPP) www.onsemi.com 7 MC10EP33, MC100EP33 ORDERING INFORMATION Package Shipping† MC10EP33DG SOIC−8 NB (Pb-Free) 98 Units / Tube MC10EP33DR2G SOIC−8 NB (Pb-Free) 2500 / Tape & Reel MC10EP33DTG TSSOP−8 (Pb-Free) 100 Units / Tube MC100EP33DG SOIC−8 NB (Pb-Free) 98 Units / Tube MC100EP33DTG TSSOP−8 (Pb-Free) 100 Units / Tube MC100EP33DTR2G TSSOP−8 (Pb-Free) 2500 / Tape & Reel MC100EP33MNR4G DFN8 (Pb-Free) 1000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 2x2, 0.5P CASE 506AA ISSUE F DATE 04 MAY 2016 1 SCALE 4:1 D PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C A B L1 ÇÇ ÇÇ ÇÇ DETAIL A E OPTIONAL CONSTRUCTIONS ÉÉ ÇÇ ÉÉ ÇÇ EXPOSED Cu TOP VIEW A DETAIL B 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L DIM A A1 A3 b D D2 E E2 e K L L1 ÉÉ ÉÉ ÇÇ A3 MOLD CMPD A1 DETAIL B 0.08 C (A3) NOTE 4 SIDE VIEW DETAIL A ALTERNATE CONSTRUCTIONS A1 C D2 8X 4 1 SEATING PLANE RECOMMENDED SOLDERING FOOTPRINT* L 5 8 e/2 e 8X 0.90 b 0.05 C 8X 0.50 2.30 1 0.10 C A B 8X 0.30 NOTE 3 BOTTOM VIEW 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. GENERIC MARKING DIAGRAM* 1 1.30 PACKAGE OUTLINE E2 K MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.30 REF 0.25 0.35 −−− 0.10 XXMG G XX = Specific Device Code M = Date Code G = Pb−Free Device *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON18658D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8, 2.0X2.0, 0.5MM PITCH PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2016 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP 8 CASE 948R−02 ISSUE A DATE 04/07/2000 SCALE 2:1 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF T U S V 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S 0.25 (0.010) B −U− A −V− S M M F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E DOCUMENT NUMBER: DESCRIPTION: 98AON00236D TSSOP 8 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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