MC10H116FNG

MC10H116 Triple Line Receiver Description The MC10H116 is a triple differential amplifier designed for use in sensing differential signals over long lines and is a functional/pinout duplication of the MC10116, with 100% improvement in propagation delay and no increase in power supply current. For termination information see AND8020. www.onsemi.com Features • Propagation Delay, 1.0 ns Typical • Power Dissipation 85 mW Typ/Pkg (same as MECL 10K™) • Improved Noise Margin 150 mV (Over Operating Voltage and 1 • • • 4 2 5 3 9 6 10 7 12 14 13 15 11 VBB* VCC1 = Pin 1 VCC2 = Pin 16 VEE = Pin 8 When input pin with bubble goes positive it’s respective output pin with bubble goes positive. *VBB to be used to supply bias to the MC10H116 only and bypassed (when used) with 0.01ĂmF to 0.1 mF capacitor to ground (0 V). VBB can source < 1.0 mA. The MC10H116 is designed to be used in sensing differential signals over long lines. The bias supply (VBB) is made available to make the device useful as a Schmitt trigger, or in other applications where a stable reference voltage is necessary. Active current sources provide these receivers with excellent common−mode noise rejection. If any amplifier in a package is not used, one input of that amplifier must be connected to VBB to prevent unbalancing the current−source bias network. The MC10H116 does not have internal−input pull− down resistors. This provides high impedance to the amplifier input and facilitates differential connections. Applications: • Low Level Receiver • Voltage Level • Schmitt Trigger Interface 1 1 PDIP−16 P SUFFIX CASE 648−08 Temperature Range) Voltage Compensated MECL 10K Compatible These Devices are Pb-Free, Halogen Free and are RoHS Compliant 16 20 16 PLCC−20 FN SUFFIX CASE 775−02 SOIC−16 D SUFFIX CASE 751B−05 MARKING DIAGRAMS* 120 16 1 MC10H116P AWLYYWWG A WL YY WW 10H116G AWLYYWW 16 10H116G AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week *For additional marking information, refer to Application Note AND8002/D. Figure 1. Logic Diagram ORDERING INFORMATION VCC1 1 16 VCC2 AOUT 2 15 COUT AOUT 3 14 COUT AIN 4 13 CIN AIN 5 12 CIN BOUT 6 11 VBB BOUT 7 10 BIN VEE 8 9 BIN Pin assignment is for Dual−in−Line Package. For PLCC pin assignment, see TND309, the Pin Conversion Tables, page 9. Figure 2. Dip Pin Assignment © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 11 1 Device Package Shipping† MC10H116DG SOIC−16 (Pb-Free) 48 Units/Tube MC10H116DR2G SOIC−16 (Pb-Free) 2500/Tape & Reel MC10H116FNG PLCC−20 (Pb-Free) 46 Units/Tube MC10H116FNR2G PLCC−20 (Pb-Free) 500/Tape & Reel MC10H116PG PDIP−16 (Pb-Free) 25 Units/Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MC10H116/D MC10H116 Table 1. MAXIMUM RATINGS Symbol Rating Unit VEE Power Supply (VCC = 0) Characteristic −8.0 to 0 Vdc VI Input Voltage (VCC = 0) 0 to VEE Vdc Iout Output Current Continuous Surge TA Operating Temperature Range Tstg Storage Temperature Range Plastic Ceramic mA 50 100 0 to +75 °C °C −55 to +150 −55 to +165 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. ELECTRICAL CHARACTERISTICS (VEE = −5.2 V ±5%) (Note 2) 0° Symbol 75° Min Max Min Max Min Max Unit Power Supply Current − 23 − 21 − 23 mA IinH Input Current High − 150 − 95 − 95 mA ICBO Input Leakage Current − 1.5 − 1.0 − 1.0 mA VBB Reference Voltage −1.38 −1.27 −1.35 −1.25 −1.31 −1.19 Vdc VOH High Output Voltage −1.02 −0.84 −0.98 −0.81 −0.92 −0.735 Vdc VOL Low Output Voltage −1.95 −1.63 −1.95 −1.63 −1.95 −1.60 Vdc VIH High Input Voltage (Note 1) −1.17 −0.84 −1.13 −0.81 −1.07 −0.735 Vdc VIL Low Input Voltage (Note 1) −1.95 −1.48 −1.95 −1.48 −1.95 −1.45 Vdc − − −2.85 to −0.8 − − Vdc − − 150 typ − − mVPP IE VCMR VPP Characteristic 25° Common Mode Range (Note 4) Input Sensitivity (Note 3) 1. When VBB is used as the reference voltage. 2. Each MECL 10H™ series circuit has been designed to meet the specifications shown in the test table, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained. Outputs are terminated through a 50 ohm resistor to −2.0 V. 3. Differential input not to exceed 1.0 Vdc. 4. 150 mVp−p differential input required to obtain full logic swing on output. Table 3. AC CHARACTERISTICS 0° Symbol 75° Min Max Min Max Min Max Unit Propagation Delay 0.4 1.3 0.4 1.3 0.45 1.45 ns tr Rise Time 0.5 1.5 0.5 1.6 0.5 1.7 ns tf Fall Time 0.5 1.5 0.5 1.6 0.5 1.7 ns tpd Characteristic 25° NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. MECL is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP−16 CASE 648−08 ISSUE V 16 1 SCALE 1:1 D A 16 9 E H E1 1 NOTE 8 b2 8 c B TOP VIEW END VIEW WITH LEADS CONSTRAINED NOTE 5 A2 A e/2 NOTE 3 L A1 C D1 e SEATING PLANE M eB END VIEW 16X b SIDE VIEW 0.010 M C A M B M NOTE 6 DATE 22 APR 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY. 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). DIM A A1 A2 b b2 C D D1 E E1 e eB L M INCHES MIN MAX −−−− 0.210 0.015 −−−− 0.115 0.195 0.014 0.022 0.060 TYP 0.008 0.014 0.735 0.775 0.005 −−−− 0.300 0.325 0.240 0.280 0.100 BSC −−−− 0.430 0.115 0.150 −−−− 10 ° MILLIMETERS MIN MAX −−− 5.33 0.38 −−− 2.92 4.95 0.35 0.56 1.52 TYP 0.20 0.36 18.67 19.69 0.13 −−− 7.62 8.26 6.10 7.11 2.54 BSC −−− 10.92 2.92 3.81 −−− 10 ° GENERIC MARKING DIAGRAM* 16 STYLE 1: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. CATHODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE 15. ANODE 16. ANODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. COMMON DRAIN 2. COMMON DRAIN 3. COMMON DRAIN 4. COMMON DRAIN 5. COMMON DRAIN 6. COMMON DRAIN 7. COMMON DRAIN 8. COMMON DRAIN 9. GATE 10. SOURCE 11. GATE 12. SOURCE 13. GATE 14. SOURCE 15. GATE 16. SOURCE 98ASB42431B PDIP−16 XXXXXXXXXXXX XXXXXXXXXXXX AWLYYWWG 1 XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 20 LEAD PLCC CASE 775−02 ISSUE G 20 1 DATE 06 APR 2021 SCALE 1:1 B 0.007 (0.180) Y BRK −N− M T L-M 0.007 (0.180) U M N S T L-M S G1 0.010 (0.250) S N S D −L− −M− Z W 20 D 1 X V S T L-M S N S VIEW D−D A 0.007 (0.180) M T L-M S N S R 0.007 (0.180) M T L-M S N S Z C H −T− VIEW S G1 0.010 (0.250) S T L-M SEATING PLANE DESCRIPTION: N S F 0.007 (0.180) M T L-M S N S VIEW S S N S NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. DIMENSIONS IN INCHES. 3. DATUMS −L−, −M−, AND −N− DETERMINED WHERE TOP OF LEAD SHOULDER EXITS PLASTIC BODY AT MOLD PARTING LINE. 4. DIMENSION G1, TRUE POSITION TO BE MEASURED AT DATUM −T−, SEATING PLANE. 5. DIMENSIONS R AND U DO NOT INCLUDE MOLD FLASH. ALLOWABLE MOLD FLASH IS 0.010 (0.250) PER SIDE. 6. DIMENSIONS IN THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM BY UP TO 0.012 (0.300). DIMENSIONS R AND U ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 7. DIMENSION H DOES NOT INCLUDE DAMBAR PROTRUSION OR INTRUSION. THE DAMBAR PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE GREATER THAN 0.037 (0.940). THE DAMBAR INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE SMALLER THAN 0.025 (0.635). DOCUMENT NUMBER: S K 0.004 (0.100) J T L-M M K1 E G 0.007 (0.180) 98ASB42594B 20 LEAD PLCC GENERIC MARKING DIAGRAM* DIM A B C E F G H J K R U V W X Y Z G1 K1 INCHES MIN MAX 0.385 0.395 0.385 0.395 0.165 0.180 0.090 0.110 0.013 0.021 0.050 BSC 0.026 0.032 0.020 −−− 0.025 −−− 0.350 0.356 0.350 0.356 0.042 0.048 0.042 0.048 0.042 0.056 −−− 0.020 2_ 10 _ 0.310 0.330 0.040 −−− MILLIMETERS MIN MAX 9.78 10.03 9.78 10.03 4.20 4.57 2.29 2.79 0.33 0.53 1.27 BSC 0.66 0.81 0.51 −−− 0.64 −−− 8.89 9.04 8.89 9.04 1.07 1.21 1.07 1.21 1.07 1.42 −−− 0.50 2_ 10 _ 7.88 8.38 1.02 −−− 1 20 XXXXXXXXX XXXXXXXXG AWLYYWW XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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