MC14011UBDR2G

MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. http://onsemi.com Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Linear and Oscillator Applications • Capable of Driving Two Low−Power TTL Loads or One SOIC−14 D SUFFIX CASE 751A Low−Power Schottky TTL Load Over the Rated Temperature Range • Double Diode Protection on All Inputs • Pin−for−Pin Replacements for Corresponding CD4000 Series UB • • Suffix Devices NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant 1 Value Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin ± 10 mA PD Power Dissipation, per Package (Note 1) 500 mW VDD Vin, Vout Iin, Iout Parameter DC Supply Voltage Range Input or Output Voltage Range (DC or Transient) 14 140xxUG AWLYWW MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol MARKING DIAGRAM xx A WL, L YY, Y WW, W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Package: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 10 1 Publication Order Number: MC14001UB/D MC14001UB, MC14011UB LOGIC DIAGRAMS MC14001UB Quad 2−Input NOR Gate 1 2 5 6 8 9 12 13 MC14011UB Quad 2−Input NAND Gate 1 3 3 2 5 4 4 6 8 10 10 9 12 11 11 13 VDD = PIN 14 VSS = PIN 7 FOR ALL DEVICES PIN ASSIGNMENTS MC14001UB Quad 2−Input NOR Gate MC14011UB Quad 2−Input NAND Gate IN 1A 1 14 VDD IN 1A 1 14 VDD IN 2A 2 13 IN 2D IN 2A 2 13 IN 2D OUTA 3 12 IN 1D OUTA 3 12 IN 1D OUTB 4 11 OUTD OUTB 4 11 OUTD IN 1B 5 10 OUTC IN 1B 5 10 OUTC IN 2B 6 9 IN 2C IN 2B 6 9 IN 2C VSS 7 8 IN 1C VSS 7 8 IN 1C http://onsemi.com 2 MC14001UB, MC14011UB ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) − 55_C 25_C 125_C Min Max Min Typ (Note 2) Max Min Max Unit Output Voltage Vin = VDD or 0 “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc Vin = 0 or VDD “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.0 2.0 2.5 − − − 2.25 4.50 6.75 1.0 2.0 2.5 − − − 1.0 2.0 2.5 5.0 10 15 4.0 8.0 12.5 − − − 4.0 8.0 12.5 2.75 5.50 8.25 − − − 4.0 8.0 12.5 − − − 5.0 5.0 10 15 –1.0 –0.25 –0.62 –1.8 − − − − –0.75 –0.2 –0.4 –1.5 –1.7 –0.36 –0.9 –3.5 − − − − –0.55 –0.14 –0.15 –1.0 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.1 3.4 0.88 2.25 8.8 − − − 0.36 0.7 2.4 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 0.25 0.5 1.0 − − − 0.0005 0.0010 0.0015 0.25 0.5 1.0 − − − 7.5 15 30 mAdc IT 5.0 10 15 Symbol Characteristic Input Voltage (VO = 4.5 Vdc) (VO = 9.0 Vdc) (VO = 13.5 Vdc) (VO = 0.5 Vdc) (VO = 1.0 Vdc) (VO = 1.5 Vdc) “1” Level Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) VIH VDD Vdc Vdc IOH Source (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Sink Total Supply Current (Notes 3, 4) (Dynamic plus Quiescent, Per Gate CL = 50 pF) Vdc mAdc IT = (0.3 mA/kHz) f + IDD/N IT = (0.6 mA/kHz) f + IDD/N IT = (0.8 mA/kHz) f + IDD/N mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL − 50) Vfk where: IT is in mH (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates per package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) Characteristic Symbol Output Rise Time tTLH = (3.0 ns/pF) CL + 30 ns tTLH = (1.5 ns/pF) CL + 15 ns tTLH = (1.1 ns/pF) CL + 10 ns tTLH Output Fall Time tTHL = (1.5 ns/pF) CL + 25 ns tTHL = (0.75 ns/pF) CL + 12.5 ns tTHL = (0.55 ns/pF) CL + 9.5 ns tTHL Propagation Delay Time tPLH, tPHL = (1.7 ns/pF) CL + 30 ns tPLH, tPHL = (0.66 ns/pF) CL + 22 ns tPLH, tPHL = (0.50 ns/pF) CL + 15 ns VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 180 90 65 360 180 130 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 90 50 40 180 100 80 ns ns tPLH, tPHL ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. http://onsemi.com 3 Unit MC14001UB, MC14011UB ORDERING INFORMATION Package Shipping† MC14001UBDG SOIC−14 (Pb−Free) 55 Units / Rail NLV14001UBDG* SOIC−14 (Pb−Free) 55 Units / Rail MC14001UBDR2G SOIC−14 (Pb−Free) 2500 / Tape & Reel NLV14001UBDR2G* SOIC−14 (Pb−Free) 2500 / Tape & Reel MC14011UBDG SOIC−14 (Pb−Free) 55 Units / Rail NLV14011UBDG* SOIC−14 (Pb−Free) 55 Units / Rail MC14011UBDR2G SOIC−14 (Pb−Free) 2500 / Tape & Reel NLV14011UBDR2G* SOIC−14 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. 20 ns VDD INPUT 14 PULSE GENERATOR INPUT OUTPUT 20 ns VDD 90% 50% 10% 0V tPLH tPHL * CL 7 VSS *All unused inputs of AND, NAND gates must be connected to VDD. All unused inputs of OR, NOR gates must be connected to VSS. tTHL Figure 1. Switching Time Test Circuit and Waveforms http://onsemi.com 4 VOH 90% 50% 10% OUTPUT INVERTING VOL tTLH MC14001UB, MC14011UB MC14001UB CIRCUIT SCHEMATIC VDD 14 3 MC14011UB CIRCUIT SCHEMATIC (1/4 of Device Shown) 10 14 VDD 1 8 2 9 3, 4, 10, 11 1, 6, 8, 13 2, 5, 9, 12 6 13 5 12 12 10 8.0 8.0 6.0 5.0 Vdc 15 Vdc b a a 4.0 b 4.0 10 Vdc 2.0 2.0 -4.0 VGS = -5.0 Vdc a b 0 2.0 4.0 6.0 8.0 10 12 14 16 Vin, INPUT VOLTAGE (Vdc) a c -10 Vdc 5.0 Vdc 4.0 10 c b a TA = -55°C b TA = +25°C c TA = +125°C -8.0 b a 6.0 Figure 3. Typical Voltage Transfer Characteristics versus Temperature a -6.0 a TA = +125°C b TA = -55°C 8.0 0 I D, DRAIN CURRENT (mAdc) I D, DRAIN CURRENT (mAdc) 0 10 Vdc 10 2.0 Figure 2. Typical Voltage and Current Transfer Characteristics -2.0 12 0 2.0 4.0 6.0 8.0 10 12 14 16 Vin, INPUT VOLTAGE (Vdc) 0 VDD = 15 Vdc Unused input connected to b VSS. a 14 a b 6.0 0 16 VDD = 15 Vdc TA = +25°C Unused input connected to VSS. a One input only 10 Vdc b Both inputs 14 Vout , OUTPUT VOLTAGE (Vdc) 11 Vout , OUTPUT VOLTAGE (Vdc) 16 7 VSS I D, DRAIN CURRENT (mAdc) 4 7 VSS b c -15 Vdc b 8.0 15 Vdc b c a VGS = 10 Vdc b c 6.0 a TA = -55°C b TA = +25°C c TA = +125°C 4.0 a 2.0 b 5.0 Vdc c -10 -10 a -8.0 -6.0 -4.0 VDS, DRAIN VOLTAGE (Vdc) a 0 -2.0 0 0 Figure 4. Typical Output Source Characteristics 2.0 4.0 6.0 VDS, DRAIN VOLTAGE (Vdc) 8.0 Figure 5. Typical Output Sink Characteristics http://onsemi.com 5 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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