MC14029BCPG

MC14029B Binary/Decade Up/Down Counter The MC14029B Binary/Decade up/down counter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. The counter consists of type D flip−flop stages with a gating structure to provide toggle flip−flop capability. The counter can be used in either Binary or BCD operation. This complementary MOS counter finds primary use in up/down and difference counting and frequency synthesizer applications where low power dissipation and/or high noise immunity is desired. It is also useful in A/D and D/A conversion and for magnitude and sign generation. Features • • • • • • • • • Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Internally Synchronous for High Speed Logic Edge−Clocked Design − Count Occurs on Positive Going Edge of Clock Asynchronous Preset Enable Operation Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over the Rated Temperature Range Pin for Pin Replacement for CD4029B NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant www.onsemi.com SOIC−16 D SUFFIX CASE 751B MARKING DIAGRAM 16 14029BG AWLYWW 1 A WL YY, Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Indicator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. MAXIMUM RATINGS (Voltages Referenced to VSS) Parameter Symbol VDD DC Supply Voltage Range Value Unit −0.5 to +18.0 V Vin, Vout Input or Output Voltage Range (DC or Transient) −0.5 to VDD + 0.5 V Iin, Iout Input or Output Current (DC or Transient) per Pin ±10 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 10 1 Publication Order Number: MC14029B/D MC14029B PIN ASSIGNMENT PE 1 16 VDD Q3 2 15 CLK P3 3 14 Q2 P0 4 13 P2 Cin 5 12 P1 Q0 6 11 Q1 Cout 7 10 U/D VSS 8 9 B/D TRUTH TABLE Carry In Up/Down Preset Enable Action 1 X 0 No Count 0 1 0 Count Up 0 0 0 Count Down X X 1 Preset X = Don’t Care ORDERING INFORMATION Package Shipping† MC14029BDR2G SOIC−16 (Pb−Free) 2500 Units / Tape & Reel NLV14029BDR2G* SOIC−16 (Pb−Free) 2500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 2 MC14029B ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) −55_C 25_C VDD Vdc Min Max Min Typ (Note 2) 125_C Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 –3.0 –0.64 –1.6 –4.2 − − − − –2.4 –0.51 –1.3 –3.4 –4.2 –0.88 –2.25 –8.8 − − − − –1.7 –0.36 –0.9 –2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance, (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 5.0 10 20 − − − 0.005 0.010 0.015 5.0 10 20 − − − 150 300 600 mAdc IT 5.0 10 15 Characteristic Output Voltage Vin = VDD or 0 Symbol Vin = 0 or VDD Input Voltage (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) “1” Level VIH (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Vdc Vdc IOH Source Sink Total Supply Current (Notes 3 & 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) mAdc IT = (0.58 mA/kHz) f + IDD IT = (1.20 mA/kHz) f + IDD IT = (1.70 mA/kHz) f + IDD mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.001. www.onsemi.com 3 MC14029B SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) All Types Characteristic Symbol Output Rise and Fall Time tTLH, tTHL = (1.5 ns/pF) CL + 25 ns tTLH, tTHL = (0.75 ns/pF) CL + 12.5 ns tTLH, tTHL = (0.55 ns/pF) CL + 9.5 ns tTLH, tTHL Propagation Delay Time Clk to Q tPLH, tPHL = (1.7 ns/pF) CL + 230 ns tPLH, tPHL = (0.66 ns/pF) CL + 97 ns tPLH, tPHL = (0.5 ns/pF) CL + 75 ns tPLH, tPHL Clk to Cout tPLH, tPHL = (1.7 ns/pF) CL + 230 ns tPLH, tPHL = (0.66 ns/pF) CL + 97 ns tPLH, tPHL = (0.5 ns/pF) CL + 75 ns tPLH, tPHL Cin to Cout tPLH, tPHL = (1.7 ns/pF) CL + 95 ns tPLH, tPHL = (0.66 ns/pF) CL + 47 ns tPLH, tPHL = (0.5 ns/pF) CL + 35 ns tPLH, tPHL PE to Q tPLH, tPHL = (1.7 ns/pF) CL + 230 ns tPLH, tPHL = (0.66 ns/pF) CL + 97 ns tPLH, tPHL = (0.5 ns/pF) CL + 75 ns tPLH, tPHL PE to Cout tPLH, tPHL = (1. 7 ns/pF) CL + 465 ns tPLH, tPHL = (0.66 ns/pF) CL + 192 ns tPLH, tPHL = (0.5 ns/pF) CL + 125 ns tPLH, tPHL VDD Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 200 100 80 Unit ns ns 5.0 10 15 − − − 200 100 90 400 200 180 5.0 10 15 − − − 250 130 85 500 260 190 5.0 10 15 − − − 175 50 50 360 120 100 5.0 10 15 − − − 235 100 80 470 200 160 5.0 10 15 − − − 320 145 105 640 290 210 tW(cl) 5.0 10 15 180 80 60 90 40 30 − − − ns fcl 5.0 10 15 − − − 4.0 8.0 10 2.0 4.0 5.0 MHz Preset Removal Time The Preset Signal must be low prior to a positive−going transition of the clock. trem 5.0 10 15 160 80 60 80 40 30 − − − ns Clock Rise and Fall Time tr(cl) tf(cl) 5.0 10 15 − − − − − − 15 5 4 ms Carry In Setup Time tsu 5.0 10 15 150 60 40 75 30 20 − − − ns Up/Down Setup Time 5.0 10 15 340 140 100 170 70 50 − − − ns Binary/Decade Setup Time 5.0 10 15 320 140 100 160 70 50 − − − ns 5.0 10 15 130 70 50 65 35 25 − − − ns Clock Pulse Width Clock Pulse Frequency Preset Enable Pulse Width ns ns ns ns tW 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. www.onsemi.com 4 MC14029B VDD Q0 PE Cin B/D U/D CLK P0 P1 P2 P3 PULSE GENERATOR 0.01 mF CERAMIC ID 500 pF Q1 Q2 CL CL Q3 CL Cout CL CL 20 ns 20 ns 90% 50% CLK 10% VARIABLE WIDTH VDD VSS Figure 1. Power Dissipation Test Circuit and Waveform VDD PE Cin B/D U/D CLK P0 P1 P2 P3 PROGRAMMABLE PULSE GENERATOR Q0 Q1 Q2 CL CL Q3 CL CL Cout CL VSS tW tsu CARRY IN OR UP/DOWN OR BINARY/DECADE trem 1/fcl VDD 50% CLOCK VSS VDD 50% VSS VDD tW PRESET ENABLE 20 ns Cout ONLY 90% 10% Q0 OR CARRY OUT 10% VSS tTLH 90% VOL tPLH tTHL tPHL tPLH Figure 2. Switching Time Test Circuit and Waveforms www.onsemi.com 5 VOH MC14029B TIMING DIAGRAM CLOCK CARRY IN UP/DOWN BINARY/DECADE PE P0 P1 P2 P3 Q0 Q1 Q2 Q3 CARRY OUT COUNT 0 1 2 3 4 5 6 Q3 Q2 Q1 Q0 Cout Cin MC14029B U/D MSD PE B/D P3 P2 P1 P0 CLK “1" 7 8 9 8 7 6 5 4 Q3 Q2 Q1 Q0 Cout Cin U/D MC14029B PE B/D P3 P2 P1 P0 CLK VDD “2" 3 2 1 0 0 9 Q3 Q2 Q1 Q0 Cout Cin MC14029B U/D LSD PE B/D P3 P2 P1 P0 CLK VDD VDD VDD “3" INPUT CLOCK CLOCK Cout1 (LSD) Cout2 Cout3 (MSD) 122 123 0 1 9 10 11 99 100 101 119 120 121 122 COUNT 123 PE *tW ^ 900 ns @ VDD = 5 V Figure 3. Divide by N BCD Down Counter and Timing Diagram (Shown for N = 123) www.onsemi.com 6 6 7 0 OUTPUT www.onsemi.com 7 CLOCK UP/DOWN CARRY IN PRESET ENABLE BINARY/DECADE 15 10 5 1 9 P0 6 Q0 CLK Q1 CLK Q0 11 P1 TE Q1 PE P1 12 TE Q0 PE P0 4 Q1 P2 14 CLK Q2 TE Q2 PE P2 13 Q2 P3 2 CLK Q3 TE Q3 PE P3 3 Q3 CARRY OUT 7 MC14029B LOGIC DIAGRAM MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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