MC14044BCPG

DATA SHEET www.onsemi.com CMOS MSI Quad R−S Latches SOIC−16 D SUFFIX CASE 751B MC14043B, MC14044B The MC14043B and MC14044B quad R−S latches are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. Each latch has an independent Q output and set and reset inputs. The Q outputs are gated through three−state buffers having a common enable input. The outputs are enabled with a logical “1” or high on the enable input; a logical “0” or low disconnects the latch from the Q outputs, resulting in an open circuit at the Q outputs. Features • Double Diode Input Protection • Three−State Outputs with Common Enable • Outputs Capable of Driving Two Low−power TTL Loads or One • • • Low−Power Schottky TTL Load Over the Rated Temperature Range Supply Voltage Range = 3.0 Vdc to 18 Vdc NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MARKING DIAGRAM 16 140xxBG AWLYWW 1 xx A WL, L YY, Y WW, W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Indicator ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol VDD Parameter Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin ± 10 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Vin, Vout Iin, Iout DC Supply Voltage Range Value Input or Output Voltage Range (DC or Transient) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 March, 2022 − Rev. 11 1 Publication Order Number: MC14043B/D MC14043B, MC14044B PIN ASSIGNMENT MC14043B MC14044B Q3 1 16 VDD Q3 1 16 VDD Q0 2 15 R3 NC 2 15 S3 R0 3 14 S3 S0 3 14 R3 S0 4 13 NC R0 4 13 Q0 12 R2 E 5 12 S2 E 5 S1 6 11 R2 R1 6 11 S2 R1 7 10 Q2 S1 7 10 Q2 VSS 8 9 Q1 VSS 8 9 Q1 NC = NO CONNECTION Figure 1. MC14043B S0 R0 S1 R1 S2 R2 S3 4 MC14044B 2 R0 Q0 3 S0 6 9 R1 Q1 7 12 VDD = PIN 16 VSS = PIN 8 NC = PIN 13 10 Q2 S1 R2 11 S2 14 TRUTH TABLE 1 Q3 S R E Q X X 0 High Impedance 15 R3 5 ENABLE R3 0 0 1 1 0 1 0 1 4 13 Q0 3 6 9 Q1 7 12 VDD = PIN 16 VSS = PIN 8 NC = PIN 2 10 Q2 11 14 TRUTH TABLE 1 Q3 S R E Q X X 0 High Impedance 15 S3 1 No Change 1 0 1 1 1 1 5 ENABLE X = Don’t Care 0 0 1 1 0 1 0 1 1 0 1 1 1 0 1 No Change X = Don’t Care Figure 2. www.onsemi.com 2 MC14043B, MC14044B ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) − 55_C Characteristic Output Voltage Vin = VDD or 0 Symbol 25_C VDD Vdc Min Max Min Typ (Note 2) 125_C Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 –3.0 –0.64 –1.6 –4.2 − − − − –2.4 –0.51 –1.3 –3.4 –4.2 –0.88 –2.25 –8.8 − − − − –1.7 –0.36 –0.9 –2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 1.0 2.0 4.0 − − − 0.002 0.004 0.006 1.0 2.0 4.0 − − − 30 60 120 mAdc Total Supply Current (Notes 3 & 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs all buffers switching) IT 5.0 10 15 Three−State Output Leakage Current ITL 15 Vin = 0 or VDD Input Voltage (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) “1” Level VIH (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Vdc Vdc IOH Source Sink mAdc IT = (0.58 mA/kHz) f + IDD IT = (1.15 mA/kHz) f + IDD IT = (1.73 mA/kHz) f + IDD ±0.1 − − ±0.0001 ±0.1 mAdc − ±3.0 mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL − 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.004. www.onsemi.com 3 MC14043B, MC14044B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) Characteristic Symbol VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 175 75 60 350 175 120 Unit Output Rise Time tTLH = (1.35 ns/pF) CL + 32.5 ns tTLH = (0.60 ns/pF) CL + 20 ns tTLH = (0.40 ns/pF) CL + 20 ns tTLH Output Fall Time tTHL = (1.35 ns/pF) CL + 32.5 ns tTHL = (0.60 ns/pF) CL + 20 ns tTHL = (0.40 ns/pF) CL + 20 ns tTHL Propagation Delay Time tPLH = (0.90 ns/pF) CL + 130 ns tPLH = (0.36 ns/pF) CL + 57 ns tPLH = (0.26 ns/pF) CL + 47 ns tPLH tPHL = (0.90 ns/pF) CL + 130 ns tPHL = (0.90 ns/pF) CL + 57 ns tPHL = (0.26 ns/pF) CL + 47 ns tPHL 5.0 10 15 − − − 175 75 60 350 175 120 ns Set, Set Pulse Width tW 5.0 10 15 200 100 70 80 40 30 − − − ns Reset, Reset Pulse Width tW 5.0 10 15 200 100 70 80 40 30 − − − ns tPLZ, tPHZ, tPZL, tPZH 5.0 10 15 − − − 150 80 55 300 160 110 ns Three−State Enable/Disable Delay ns ns ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. AC WAVEFORMS MC14043B MC14044B 20 ns 20 ns VDD 90% SET 10% 50% VSS 20 ns RESET SET 50% 20 ns 10% tPHL 20 ns VDD 90% 10% VSS 20 ns 20 ns 90% VDD 10% VSS VDD 90% 50% 10% tTHL Q 20 ns VSS tTLH 90% 50% 50% RESET tTLH VOH Q 50% VOL tTHL 90% 10% tPLH tPLH Figure 3. www.onsemi.com 4 tPHL VOH VOL MC14043B, MC14044B THREE−STATE ENABLE/DISABLE DELAYS Set, Reset, Enable, and Switch Conditions for 3−State Tests MC14043B VDD MC14044B S1 S2 Q S R S R tPZH Open Closed A VDD VSS VSS VDD tPZL Closed Open B VSS VDD VDD VSS tPHZ Open Closed A VDD VSS VSS VDD tPLZ Closed Open B VSS VDD VDD VSS Test Enable S1 TO OUTPUT UNDER TEST 1k CL 50 pF S2 VSS Figure 4. VDD ENABLE 50% VSS tPZH VDD 90% QA 10% tPZL tPHZ VOL tPLZ VOH QB 10% VSS Figure 5. ORDERING INFORMATION Package Shipping† MC14043BDG SOIC−16 (Pb−Free) 48 Units / Rail NLV14043BDG* SOIC−16 (Pb−Free) 48 Units / Rail MC14043BDR2G SOIC−16 (Pb−Free) 2500 Units / Tape & Reel NLV14043BDR2G* SOIC−16 (Pb−Free) 2500 Units / Tape & Reel MC14044BDG SOIC−16 (Pb−Free) 48 Units / Rail MC14044BDR2G SOIC−16 (Pb−Free) 2500 Units / Tape & Reel NLV14044BDR2G* SOIC−16 (Pb−Free) 2500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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