MC14050BDTG

DATA SHEET www.onsemi.com Hex Buffer MC14049B, MC14050B PIN ASSIGNMENT Features • • • • • • • • High Source and Sink Currents High−to−Low Level Converter Supply Voltage Range = 3.0 V to 18 V VIN can exceed VDD Meets JEDEC B Specifications Improved ESD Protection On All Inputs NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Parameter VDD 1 16 NC OUTA 2 15 OUTF INA 3 14 INF OUTB 4 13 NC INB 5 12 OUTE OUTC 6 11 INE INC 7 10 OUTD VSS 8 9 IND MARKING DIAGRAMS 16 16 14 050B ALYWG G 140xxBG AWLYWW 1 1 SOIC−16 MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol TSSOP−16 DT SUFFIX CASE 948F SOIC−16 D SUFFIX CASE 751B The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. These devices provide logic level conversion using only one supply voltage, VDD. The input−signal high level (VIH) can exceed the VDD supply voltage for logic level conversions. Two TTL/DTL loads can be driven when the devices are used as a CMOS−to−TTL/DTL converter (VDD = 5.0 V, VOL ≤ 0.4 V, IOL ≥ 3.2 mA). Note that pins 13 and 16 are not connected internally on these devices; consequently connections to these terminals will not affect circuit operation. Value Unit VDD DC Supply Voltage Range −0.5 to +18.0 V Vin Input Voltage Range (DC or Transient) −0.5 to +18.0 V Vout Output Voltage Range (DC or Transient) −0.5 to VDD + 0.5 V Iin Input Current (DC or Transient) per Pin ± 10 mA Iout Output Current (DC or Transient) per Pin ± 45 mA PD Power Dissipation, per Package (Note 1) (Plastic) (SOIC) 825 740 xx A WL, L YY, Y WW, W G or G TSSOP−16 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Indicator (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: See Figure 3. This device contains protection circuitry to protect the inputs against damage due to high static voltages or electric fields referenced to the VSS pin only. Extra precautions must be taken to avoid applications of any voltage higher than the maximum rated voltages to this high−impedance circuit. For proper operation, the ranges VSS ≤ Vin ≤ 18 V and VSS ≤ Vout ≤ VDD are recommended. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 March, 2022 − Rev. 10 1 Publication Order Number: MC14049B/D MC14049B, MC14050B LOGIC DIAGRAM MC14049B MC14050B 3 2 3 2 5 4 5 4 7 6 7 6 9 10 9 10 11 12 11 12 14 15 14 15 NC = PIN 13, 16 VSS = PIN 8 VDD = PIN 1 NC = PIN 13, 16 VSS = PIN 8 VDD = PIN 1 ORDERING INFORMATION Package Shipping† MC14049BDG SOIC−16 (Pb−Free) 48 Units / Rail MC14049BDR2G SOIC−16 (Pb−Free) 2500 Units / Tape & Reel NLV14049BDR2G* SOIC−16 (Pb−Free) 2500 Units / Tape & Reel MC14050BDG SOIC−16 (Pb−Free) 48 Units / Rail MC14050BDR2G SOIC−16 (Pb−Free) 2500 Units / Tape & Reel NLV14050BDR2G* SOIC−16 (Pb−Free) 2500 Units / Tape & Reel MC14050BDTR2G TSSOP−16 (Pb−Free) 2500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 2 MC14049B, MC14050B ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) –55_C Characteristic Output Voltage Vin = VDD Symbol +25_C VDD Vdc Min Max Min Typ (Note 2) +125_C Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 10 15 –1.6 –1.6 –4.7 − − − –1.25 –1.30 –3.75 –2.5 –2.6 –10 − − − –1.0 –1.0 –3.0 − − − IOL 5.0 10 15 3.75 10 30 − − − 3.2 8.0 24 6.0 16 40 − − − 2.6 6.6 19 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 10 20 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 1.0 2.0 4.0 − − − 0.002 0.004 0.006 1.0 2.0 4.0 − − − 30 60 120 mAdc Total Supply Current (Notes 3 & 4) (Dynamic plus Quiescent, per package) (CL = 50 pF on all outputs, all buffers switching IT 5.0 10 15 Vin = 0 Input Voltage (VO = 4.5 Vdc) (VO = 9.0 Vdc) (VO = 13.5 Vdc) “1” Level (VO = 0.5 Vdc) (VO = 1.0 Vdc) (VO = 1.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Source Sink VIH IOH Vdc Vdc mAdc IT = (1.8 mA/kHz) f + IDD IT = (3.5 mA/kHz) f + IDD IT = (5.3 mA/kHz) f + IDD mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at +25_C 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL − 50) Vfk Where: IT is in mA (per Package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency and k = 0.002. www.onsemi.com 3 MC14049B, MC14050B AC SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = + 25_C) Symbol Characteristic Output Rise Time tTLH = (0.7 ns/pF) CL + 65 ns tTLH = (0.25 ns/pF) CL + 37.5 ns tTLH = (0.2 ns/pF) CL + 30 ns tTLH Output Fall Time tTHL = (0.2 ns/pF) CL + 30 ns tTHL = (0.06 ns/pF) CL + 17 ns tTHL = (0.04 ns/pF) CL + 13 ns tTHL Propagation Delay Time tPLH = (0.33 ns/pF) CL + 63.5 ns tPLH = (0.19 ns/pF) CL + 30.5 ns tPLH = (0.06 ns/pF) CL + 27 ns tPLH Propagation Delay Time tPHL = (0.2 ns/pF) CL + 30 ns tPHL = (0.1 ns/pF) CL + 15 ns tPHL = (0.05 ns/pF) CL + 12.5 ns tPHL VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 160 80 60 5.0 10 15 − − − 40 20 15 60 40 30 5.0 10 15 − − − 80 40 30 140 80 60 5.0 10 15 − − − 40 20 15 80 40 30 Unit ns ns ns ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labeled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. MC14049B VDD MC14050B VDD 1 1 IOH 8 MC14049B VDD 1 IOL VOH VSS 8 1 IOL VOL VSS 8 VDS = VOH - VDD IOH VOL VSS 8 VOH VSS VDD = VOL 160 I OL, OUTPUT SINK CURRENT (mAdc) 0 I OH , OUTPUT SOURCE CURRNT (mAdc) MC14050B VDD VGS = 5.0 Vdc -10 VGS = 15 Vdc 120 -20 VGS = 10 Vdc -30 -40 VGS = 15 Vdc -50 -10 MAXIMUM CURRENT LEVEL -8.0 -6.0 -4.0 -2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (Vdc) MAXIMUM CURRENT LEVEL 40 VGS = 5.0 Vdc 0 0 VGS = 10 Vdc 80 0 Figure 1. Typical Output Source Characteristics 2.0 4.0 6.0 8.0 VDS, DRAIN-TO-SOURCE VOLTAGE (Vdc) Figure 2. Typical Output Sink Characteristics www.onsemi.com 4 10 PD , MAXIMUM POWER DISSIPATION (mW) PER PACKAGE MC14049B, MC14050B 1200 1100 1000 900 825 800 740 700 600 (P) PDIP 500 400 300 (D) SOIC 200 100 0 25 175 mW (P) 120 mW (D) 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 175 Figure 3. Ambient Temperature Power Derating 20 ns 20 ns VDD 10% # Vin Vout VSS tPLH CL tTHL tPHL 10% tTLH Figure 4. Switching Time Test Circuit and Waveforms www.onsemi.com 5 tTLH tPHL 90% 50% OUTPUT MC14050B #Invert on MC14049B only VOH 90% 50% 10% OUTPUT MC14049B 8 VSS tPLH tPHL 1 PULSE GENERATOR VDD 90% 50% INPUT VOL VOH VOL tTHL MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16 DATE 19 OCT 2006 1 SCALE 2:1 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S K S ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 8 1 0.25 (0.010) M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 16 XXXX XXXX ALYW 1 1 0.65 PITCH 16X 0.36 DOCUMENT NUMBER: DESCRIPTION: 16X 1.26 98ASH70247A TSSOP−16 DIMENSIONS: MILLIMETERS XXXX A L Y W G or G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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