MC14175BCPG

MC14175B Quad Type D Flip-Flop The MC14175B quad type D flip−flop is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. Each of the four flip−flops is positive−edge triggered by a common clock input (C). An active−low reset input (R) asynchronously resets all flip−flops. Each flip−flop has independent Data (D) inputs and complementary outputs (Q and Q). These devices may be used as shift register elements or as type T flip−flops for counter and toggle applications. http://onsemi.com Features • • • • • • • • • SOIC−16 D SUFFIX CASE 751B Complementary Outputs Static Operation All Inputs and Outputs Buffered Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Output Compatible with Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Functional Equivalent to TTL 74175 These Devices are Pb−Free and are RoHS Compliant NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable* PIN ASSIGNMENT MAXIMUM RATINGS (Voltages Referenced to VSS) Parameter Value Unit VDD −0.5 to +18.0 V Vin, Vout −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin Iin, Iout ±10 mA Power Dissipation per Package (Note 1) PD 500 mW Ambient Temperature Range TA −55 to +125 °C −65 to +150 °C 260 °C Input or Output Voltage Range (DC or Transient) Storage Temperature Range Lead Temperature (8−Second Soldering) R 1 16 VDD Q0 2 15 Q3 Q0 3 14 Q3 D0 4 13 D3 D1 5 12 D2 Q1 6 11 Q2 Q1 7 10 Q2 VSS 8 9 C MARKING DIAGRAMS Symbol DC Supply Voltage Range SOEIAJ−16 F SUFFIX CASE 966 16 16 14175BG AWLYWW 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS ≤ (Vin or Vout) ≤ VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. MC14175B ALYWG 1 SOIC−16 A WL, L YY, Y WW, W G SOEIAJ−16 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MC14175BDG SOIC−16 (Pb−Free) 48 Units/Rail MC14175BDR2G SOIC−16 (Pb−Free) 2500/Tape & Reel NLV14175BDR2G* SOIC−16 (Pb−Free) 2500/Tape & Reel MC14175BFELG 2000/Tape & Reel Device SOEIAJ−16 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 9 1 Publication Order Number: MC14175B/D MC14175B TRUTH TABLE Inputs Outputs Clock Data Reset Q Q X 0 1 X X 1 1 1 0 0 1 Q 0 1 0 Q 1 No Change X = Don’t Care 9 CLOCK 1 RESET 4 D0 5 D1 12 D2 13 D3 Q0 2 Q0 3 Q1 7 Q1 6 Q2 10 Q2 11 Q3 15 Q3 14 VDD = PIN 16 VSS = PIN 8 Figure 1. Block Diagram Figure 2. Timing Diagram Figure 3. Functional Block Diagram http://onsemi.com 2 MC14175B ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) −55_C 25_C VDD 125_C Symbol Vdc Min Max Min Typ (Note 2) VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 –3.0 –0.64 –1.6 –4.2 − − − − –2.4 –0.51 –1.3 –3.4 –4.2 –0.88 –2.25 –8.8 − − − − –1.7 –0.36 –0.9 –2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Input Current Iin 15 − ±0.1 − ±0.00001 ±0.1 − ±1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 5.0 10 20 − − − 0.005 0.010 0.015 5.0 10 20 − − − 150 300 600 mAdc IT 5.0 10 15 Characteristic Output Voltage Vin = VDD or 0 “0” Level “1” Level Vin = 0 or VDD Input Voltage “0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) “1” Level (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Source Sink Total Supply Current (Notes 3 & 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) Max Min Max Unit VIL Vdc VIH Vdc IOH mAdc IT = (1.7 mA/kHz) f + IDD IT = (3.4 mA/kHz) f + IDD IT = (5.0 mA/kHz) f + IDD mAdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL – 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.004. http://onsemi.com 3 MC14175B SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) All Types Characteristic Symbol Output Rise and Fall Time tTLH, tTHL = (1.35 ns/pF) CL + 32 ns tTLH, tTHL = (0.6 ns/pF) CL + 20 ns tTLH, tTHL = (0.4 ns/pF) CL + 20 ns tTLH, tTHL Propagation Delay Time — Clock to Q, Q tPLH, tPHL = (0.9 ns/pF) CL + 175 ns tPLH, tPHL = (0.36 ns/pF) CL + 72 ns tPLH, tPHL = (0.26 ns/pF) CL + 57 ns tPLH, tPHL Propagation Delay Time — Reset to Q, Q tPHL = (0.9 ns/pF) CL + 280 ns tPHL = (0.36 ns/pF) CL + 112 ns tPHL = (0.26 ns/pF) CL + 87 ns tPHL, tPLH VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 220 90 70 400 160 120 5.0 10 15 − − − 325 130 100 500 200 150 Unit ns ns ns Clock Pulse Width tWH 5.0 10 15 250 100 75 110 45 35 − − − ns Reset Pulse Width tWL 5.0 10 15 200 80 60 100 40 30 − − − ns fcl 5.0 10 15 − − − 4.5 11 14 2.0 5.0 6.5 mHz tTLH, tTHL 5.0 10 15 − − − − − − 15 5.0 4.0 ms Data Setup Time tsu 5.0 10 15 120 50 40 60 25 20 − − − ns Data Hold Time th 5.0 10 15 80 40 30 40 20 15 − − − ns trem 5.0 10 15 250 100 80 125 50 40 − − − ns Clock Pulse Frequency Clock Pulse Rise and Fall Time Reset Removal Time 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K DATE 29 DEC 2006 SCALE 1:1 −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE CATHODE ANODE NO CONNECTION CATHODE CATHODE NO CONNECTION ANODE CATHODE STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. COLLECTOR, DYE #1 BASE, #1 EMITTER, #1 COLLECTOR, #1 COLLECTOR, #2 BASE, #2 EMITTER, #2 COLLECTOR, #2 COLLECTOR, #3 BASE, #3 EMITTER, #3 COLLECTOR, #3 COLLECTOR, #4 BASE, #4 EMITTER, #4 COLLECTOR, #4 STYLE 4: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. STYLE 5: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. DRAIN, DYE #1 DRAIN, #1 DRAIN, #2 DRAIN, #2 DRAIN, #3 DRAIN, #3 DRAIN, #4 DRAIN, #4 GATE, #4 SOURCE, #4 GATE, #3 SOURCE, #3 GATE, #2 SOURCE, #2 GATE, #1 SOURCE, #1 STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE ANODE STYLE 7: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. SOURCE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE P‐CH SOURCE P‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) GATE N‐CH COMMON DRAIN (OUTPUT) COMMON DRAIN (OUTPUT) SOURCE N‐CH COLLECTOR, DYE #1 COLLECTOR, #1 COLLECTOR, #2 COLLECTOR, #2 COLLECTOR, #3 COLLECTOR, #3 COLLECTOR, #4 COLLECTOR, #4 BASE, #4 EMITTER, #4 BASE, #3 EMITTER, #3 BASE, #2 EMITTER, #2 BASE, #1 EMITTER, #1 SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42566B SOIC−16 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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