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MC14551BD

MC14551BD

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOIC-16_9.9X3.9MM

  • 描述:

    SINGLE-ENDED MUX, 4 FUNC, 2 CH

  • 数据手册
  • 价格&库存
MC14551BD 数据手册
MC14551B Quad 2-Channel Analog Multiplexer/Demultiplexer The MC14551B is a digitally−controlled analog switch. This device implements a 4PDT solid state switch with low ON impedance and very low OFF Leakage current. Control of analog signals up to the complete supply voltage range can be achieved. http://onsemi.com Features MARKING DIAGRAMS • Triple Diode Protection on All Control Inputs • Supply Voltage Range = 3.0 Vdc to 18 Vdc • Analog Voltage Range (VDD − VEE) = 3.0 to 18 V • • • • • 16 Note: VEE must be v VSS Linearized Transfer Characteristics Low Noise — 12 nV√Cycle, f ≥ 1.0 kHz typical For Low RON, Use The HC4051, HC4052, or HC4053 High−Speed CMOS Devices Switch Function is Break Before Make These Devices are Pb−Free and are RoHS Compliant ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PDIP−16 P SUFFIX CASE 648 1 MC14551BCP AWLYYWWG 1 16 SOIC−16 D SUFFIX CASE 751B 1 14551BG AWLYWW 1 MAXIMUM RATINGS Parameter Symbol Value Unit VDD – 0.5 to + 18.0 V Vin, Vout – 0.5 to VDD + 0.5 V Input Current (DC or Transient), per Control Pin Iin ± 10 mA Switch Through Current Isw ± 25 mA Power Dissipation, per Package (Note 1) PD 500 mW Ambient Temperature Range TA – 55 to + 125 _C Storage Temperature Range Tstg – 65 to + 150 _C TL 260 DC Supply Voltage Range (Referenced to VEE, VSS ≥ VEE) Input or Output Voltage (DC or Transient) (Referenced to VSS for Control Input and VEE for Switch I/O) Lead Temperature (8–Second Soldering) _C 16 SOEIAJ−16 F SUFFIX CASE 966 1 MC14551B ALYWG 1 A WL, L YY, Y WW, W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Temperature Derating: Plastic “P and D/DW” Packages: − 7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS v (Vin or Vout) v VDD for control inputs and VEE ≤ (Vin or Vout) ≤ VDD for Switch I/O. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS, VEE or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 7 1 Publication Order Number: MC14551B/D MC14551B PIN ASSIGNMENT W1 1 16 VDD X0 2 15 W0 X1 3 14 W X 4 13 Z Y 5 12 Z1 Y0 6 11 Z0 VEE 7 10 Y1 VSS 8 9 9 SWITCHES IN/OUT CONTROL VDD = Pin 16 VSS = Pin 8 VEE = Pin 7 15 1 2 3 6 10 11 12 CONTROL W W0 W1 X0 X1 Y0 Y1 Z0 Z1 Control ON 0 W0 X0 Y0 Z0 1 W1 X1 Y1 Z1 X 14 4 COMMONS OUT/IN Y 5 Z 13 NOTE: Control Input referenced to VSS, Analog Inputs and Outputs reference to VEE. VEE must be v VSS. ORDERING INFORMATION Package Shipping† MC14551BCPG PDIP−16 (Pb−Free) 25 Units / Rail MC14551BDG SOIC−16 (Pb−Free) 48 Units / Rail MC14551BDR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel SOEIAJ−16 (Pb−Free) 50 Units / Rail Device MC14551BFG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MC14551B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS – 55_C Characteristic VDD Test Conditions 125_C 25_C Symbol Min Max Min Typ (Note 2) Max Min Max Unit SUPPLY REQUIREMENTS (Voltages Referenced to VEE) Power Supply Voltage Range − VDD – 3.0 ≥ VSS ≥ VEE VDD 3.0 18 3.0 − 18 3.0 18 V Quiescent Current Per Package 5.0 10 15 Control Inputs: Vin = VSS or VDD, Switch I/O: VEE v VI/O v VDD, and DVswitch v 500 mV (Note 3 ) IDD − − − 5.0 10 20 − − − 0.005 0.010 0.015 5.0 10 20 − − − 150 300 600 mA Total Supply Current (Dynamic Plus Quiescent, Per Package) 5.0 10 15 TA = 25_C only (The channel component, (Vin – Vout)/Ron, is not included.) ID(AV) Typical mA (0.07 mA/kHz) f + IDD (0.20 mA/kHz) f + IDD (0.36 mA/kHz) f + IDD CONTROL INPUT (Voltages Referenced to VSS) Low−Level Input Voltage 5.0 10 15 Ron = per spec, Ioff = per spec VIL − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 V High−Level Input Voltage 5.0 10 15 Ron = per spec, Ioff = per spec VIH 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − V Input Leakage Current 15 Vin = 0 or VDD Iin − ± 0.1 − ± 0.00001 ± 0.1 − ± 1.0 mA Input Capacitance − Cin − − − 5.0 7.5 − − pF SWITCHES IN/OUT AND COMMONS OUT/IN — W, X, Y, Z (Voltages Referenced to VEE) Recommended Peak−to− Peak Voltage Into or Out of the Switch − Channel On or Off Recommended Static or Dynamic Voltage Across the Switch (Note 3) (Figure 3) − Channel On Output Offset Voltage − VI/O 0 VDD 0 − VDD 0 VDD Vp–p DVswitch 0 600 0 − 600 0 300 mV Vin = 0 V, No Load VOO − − − 10 − − − mV DVswitch v 500 mV (Note 3), Vin = VIL or VIH (Control), and Vin = 0 to VDD (Switch) Ron − − 800 400 220 − − − 250 120 80 1050 500 280 − − − 1200 520 300 W DRon − − − 70 50 45 − − − 25 10 10 70 50 45 − − − 135 95 65 W Ioff − ± 100 − ± 0.05 ± 100 − ± 1000 nA CI/O − − − 10 − − − pF CO/I − − − 17 − − − pF CI/O − − − − − − 0.15 0.47 − − − − − − pF ON Resistance 5.0 10 15 DON Resistance Between Any Two Channels in the Same Package 5.0 10 15 Off−Channel Leakage Current (Figure 8) 15 Vin = VIL or VIH (Control) Channel to Channel or Any One Channel Capacitance, Switch I/O − Switch Off Capacitance, Common O/I − Capacitance, Feedthrough (Channel Off) − − Pins Not Adjacent Pins Adjacent 2. Data labeled “Typ” is not to be used for design purposes, but is intended as an indication of the IC’s potential performance. 3. For voltage drops across the switch (DVswitch) > 600 mV ( > 300 mV at high temperature), excessive VDD current may be drawn; i.e. the current out of the switch may contain both VDD and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded. (See first page of this data sheet.) http://onsemi.com 3 MC14551B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (CL = 50 pF, TA = 25_C, VEE v VSS) Characteristic Symbol Propagation Delay Times Switch Input to Switch Output (RL = 10 kW) tPLH, tPHL = (0.17 ns/pF) CL + 26.5 ns tPLH, tPHL = (0.08 ns/pF) CL + 11 ns tPLH, tPHL = (0.06 ns/pF) CL + 9.0 ns tPLH, tPHL Control Input to Output (RL = 10 kW) VEE = VSS (Figure 4) tPLH, tPHL VDD – VEE Vdc Min Max − 5.0 10 15 Second Harmonic Distortion RL = 10 kW, f = 1 kHz, Vin = 5 Vp−p Typ (Note 4 ) 5.0 10 15 − Unit ns 35 15 12 90 40 30 350 140 100 875 350 250 ns − 10 − 0.07 − % BW 10 − 17 − MHz Off Channel Feedthrough Attenuation, Figure 5 RL = 1 kW, Vin = 1/2 (VDD − VEE) p−p, fin = 55 MHz − 10 − – 50 − dB Channel Separation (Figure 6) RL = 1 kW, Vin = 1/2 (VDD − VEE) p−p, fin = 3 MHz − 10 − – 50 − dB Crosstalk, Control Input to Common O/I, Figure 7 R1 = 1 kW, RL = 10 kW, Control tr = tf = 20 ns − 10 − 75 − mV Bandwidth (Figure 5) RL = 1 kW, Vin = 1/2 (VDD − VEE) p−p, 20 Log (Vout / Vin) = − 3 dB, CL = 50 pF 4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. http://onsemi.com 4 MC14551B VDD VDD VDD IN/OUT OUT/IN VEE VDD LEVEL CONVERTED CONTROL IN/OUT OUT/IN CONTROL VEE Figure 1. Switch Circuit Schematic 16 CONTROL9 VDD LEVEL CONVERTER 8 VSS 7 CONTROL VEE W015 14W W11 X02 4X X13 Y06 5Y Y110 Z011 13Z Z112 Figure 2. MC14551B Functional Diagram http://onsemi.com 5 MC14551B TEST CIRCUITS ON SWITCH CONTROL SECTION OF IC PULSE GENERATOR CONTROL Vout LOAD V RL CL SOURCE VDD VEE VEE VDD Figure 4. Propagation Delay Times, Control to Output Figure 3. DV Across Switch Control input used to turn ON or OFF the switch under test. RL ON CONTROL Vout RL CONTROL OFF CL = 50 pF Vout RL CL = 50 pF Vin VDD - VEE 2 Vin VDD - VEE 2 Figure 5. Bandwidth and Off−Channel Feedthrough Attenuation Figure 6. Channel Separation (Adjacent Channels Used for Setup) OFF CHANNEL UNDER TEST VDD CONTROL CONTROL SECTION OF IC Vout RL VEE OTHER CHANNEL(S) CL = 50 pF VEE VDD R1 VEE VDD Figure 7. Crosstalk, Control Input to Common O/I Figure 8. Off Channel Leakage VDD KEITHLEY 160 DIGITAL MULTIMETER 10 k 1 kW RANGE VDD VEE = VSS Figure 9. Channel Resistance (RON) Test Circuit http://onsemi.com 6 X/Y PLOTTER MC14551B 350 300 300 250 200 150 TA = 125°C 100 25°C -  55°C 50 0 -  10 -  8.0 -  6.0 -  4.0 -  2.0 RON, “ON” RESISTANCE (OHMS) RON, “ON” RESISTANCE (OHMS) 350 0 2.0 4.0 6.0 8.0 250 200 150 TA = 125°C 100 25°C -  55°C 50 0 -  10 -  8.0 -  6.0 -  4.0 -  2.0 10 0 2.0 4.0 6.0 8.0 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 10. VDD @ 7.5 V, VEE @ – 7.5 V Figure 11. VDD @ 5.0 V, VEE @ – 5.0 V 700 350 600 300 RON, “ON” RESISTANCE (OHMS) RON, “ON” RESISTANCE (OHMS) TYPICAL RESISTANCE CHARACTERISTICS 500 400 300 TA = 125°C 200 25°C 100 -  55°C 0 -  10 -  8.0 -  6.0 -  4.0 -  2.0 0 2.0 4.0 6.0 8.0 TA = 25°C VDD = 2.5 V 250 200 150 5.0 V 100 7.5 V 50 0 -  10 -  8.0 -  6.0 -  4.0 -  2.0 10 0 2.0 4.0 6.0 8.0 Vin, INPUT VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 12. VDD @ 2.5 V, VEE @ – 2.5 V Figure 13. Comparison at 25_C, VDD @ – VEE http://onsemi.com 7 10 10 MC14551B APPLICATIONS INFORMATION Figure A illustrates use of the on−chip level converter detailed in Figure 2. The 0−to−5.0 V Digital Control signal is used to directly control a 9 Vp−p analog signal. The digital control logic levels are determined by VDD and VSS. The VDD voltage is the logic high voltage; the VSS voltage is logic low. For the example, VDD = + 5.0 V = logic high at the control inputs; VSS = GND = 0 V = logic low. The maximum analog signal level is determined by VDD and VEE. The VDD voltage determines the maximum recommended peak above VSS. The VEE voltage determines the maximum swing below VSS. For the example, VDD – VSS = 5.0 V maximum swing above VSS; VSS – VEE = 5.0 V maximum swing below VSS. The example shows a ± 4.5 V signal which allows a 1/2 V margin at each peak. If voltage transients above VDD and/or below VEE are anticipated on the analog channels, external diodes (Dx) are recommended as shown in Figure B. These diodes should be small signal types able to absorb the maximum anticipated current surges during clipping. The absolute maximum potential difference between VDD and VEE is 18 V. Most parameters are specified up to 15 V which is the recommended maximum difference between VDD and VEE. Balanced supplies are not required. However, VSS must be greater than or equal to VEE. For example, VDD = + 10 V, VSS = + 5.0 V, and VEE = – 3.0 V is acceptable. See the table below. +5 V -5 V VDD +5 V 9 Vp-p ANALOG SIGNAL EXTERNAL CMOS DIGITAL CIRCUITRY VSS SWITCH I/O VEE + 4.5 V COMMON O/I 9 Vp-p GND ANALOG SIGNAL MC14551B 0-TO-5 V DIGITAL - 4.5 V CONTROL CONTROL SIGNAL Figure A. Application Example VDD VDD Dx Dx SWITCH I/O COMMON O/I Dx Dx VEE VEE Figure B. External Schottky or Germanium Clipping Diodes ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ POSSIBLE SUPPLY CONNECTIONS VDD In Volts VSS In Volts VEE In Volts Control Inputs Logic High/Logic Low In Volts Maximum Analog Signal Range In Volts +8 0 –8 + 8/0 + 8 to – 8 = 16 Vp–p +5 0 – 12 + 5/0 + 5 to – 12 = 17 Vp–p +5 0 0 + 5/0 + 5 to 0 = 5 Vp–p +5 0 –5 + 5/0 + 5 to – 5 = 10 Vp–p –5 + 10/ + 5 + 10 to – 5 = 15 Vp–p + 10 http://onsemi.com 8 MC14551B PACKAGE DIMENSIONS PDIP−16 CASE 648−08 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. −A− 16 9 1 8 B F C L DIM A B C D F G H J K L M S S −T− SEATING PLANE K H G D M J 16 PL 0.25 (0.010) M T A M INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 SOEIAJ−16 CASE 966−01 ISSUE A 16 LE 9 Q1 E HE 1 M_ L 8 Z DETAIL P D e VIEW P A DIM A A1 b c D E e HE L LE M Q1 Z A1 b 0.13 (0.005) c M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). 0.10 (0.004) http://onsemi.com 9 MILLIMETERS MIN MAX --2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 --0.78 INCHES MIN MAX --0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 --0.031 MC14551B PACKAGE DIMENSIONS SOIC−16 D SUFFIX CASE 751B−05 ISSUE K −A− 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 −B− 1 P 8 PL 0.25 (0.010) 8 B M S G R K F X 45 _ C −T− SEATING PLANE J M D DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S SOLDERING FOOTPRINT 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MC14551B/D
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