MC33201, MC33202,
MC33204, NCV33201,
NCV33202, NCV33204
Low Voltage, Rail-to-Rail
Operational Amplifiers
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The MC33201/2/4 family of operational amplifiers provide
rail−to−rail operation on both the input and output. The inputs can be
driven as high as 200 mV beyond the supply rails without phase
reversal on the outputs, and the output can swing within 50 mV of each
rail. This rail−to−rail operation enables the user to make full use of the
supply voltage range available. It is designed to work at very low
supply voltages (± 0.9 V) yet can operate with a supply of up to +12 V
and ground. Output current boosting techniques provide a high output
current capability while keeping the drain current of the amplifier to a
minimum. Also, the combination of low noise and distortion with a
high slew rate and drive capability make this an ideal amplifier for
audio applications.
PDIP−8
P, VP SUFFIX
CASE 626
8
1
8
1
Features
• Low Voltage, Single Supply Operation
•
•
•
•
•
•
•
•
•
•
8
(+1.8 V and Ground to +12 V and Ground)
Input Voltage Range Includes both Supply Rails
Output Voltage Swings within 50 mV of both Rails
No Phase Reversal on the Output for Over−driven Input Signals
High Output Current (ISC = 80 mA, Typ)
Low Supply Current (ID = 0.9 mA, Typ)
600 W Output Drive Capability
Extended Operating Temperature Ranges
(−40° to +105°C and −55° to +125°C)
Typical Gain Bandwidth Product = 2.2 MHz
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
SOIC−8
D, VD SUFFIX
CASE 751
Micro8]
DM SUFFIX
CASE 846A
PDIP−14
P, VP SUFFIX
CASE 646
14
1
14
SOIC−14
D, VD SUFFIX
CASE 751A
1
14
1
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 11 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
July, 2018 − Rev. 18
1
Publication Order Number:
MC33201/D
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PIN CONNECTIONS
MC33204
All Case Styles
MC33201
All Case Styles
NC 1
8
2
7
Output 1 1
NC
2
VCC
Inputs 1
Inputs
3
6
Output
VEE 4
5
NC
2
Inputs 1
1
3
VEE 4
4
13
12
11
5
10
6
2
3
Output 2 7
MC33202
All Case Styles
Output 1 1
1
3
VCC 4
Inputs 2
(Top View)
14 Output 4
9
8
Inputs 4
VEE
Inputs 3
Output 3
(Top View)
8
VCC
7
Output 2
6
2
Inputs 2
5
(Top View)
VCC
VCC
VEE
VCC
Vin-
Vout
VCC
Vin+
VEE
This device contains 70 active transistors (each amplifier).
Figure 1. Circuit Schematic
(Each Amplifier)
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2
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VS
+13
V
Input Differential Voltage Range
VIDR
Note 1
V
Common Mode Input Voltage Range (Note 2)
VCM
VCC + 0.5 V to
VEE − 0.5 V
V
Output Short Circuit Duration
ts
Note 3
sec
Maximum Junction Temperature
TJ
+150
°C
Storage Temperature
Tstg
− 65 to +150
°C
Maximum Power Dissipation
PD
Note 3
mW
Supply Voltage (VCC to VEE)
DC ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
VCC = 2.0 V
VCC = 3.3 V
VCC = 5.0 V
Input Offset Voltage
VIO (max)
MC33201, NCV33201V
MC33202, NCV33202, V
MC33204, NCV33204, V
± 8.0
±10
±12
± 8.0
±10
±12
± 6.0
± 8.0
±10
Output Voltage Swing
VOH (RL = 10 kW)
VOL (RL = 10 kW)
1.9
0.10
3.15
0.15
4.85
0.15
Power Supply Current
per Amplifier (ID)
1.125
1.125
1.125
Unit
mV
Vmin
Vmax
mA
Specifications at VCC = 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. VEE = GND.
DC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.)
Figure
Symbol
Input Offset Voltage (VCM 0 V to 0.5 V, VCM 1.0 V to 5.0 V)
MC33201/NCV33201V:
TA = + 25°C
MC33201:
TA = − 40° to +105°C
MC33201V/NCV33201V: TA = − 55° to +125°C
MC33202/NCV33202, V:
TA = + 25°C
MC33202/NCV33202:
TA = − 40° to +105°C
MC33202V/NCV33202V: TA = − 55° to +125°C (Note 4)
MC33204/NCV33204V:
TA = + 25°C
MC33204:
TA = − 40° to +105°C
MC33204V/NCV33204V: TA = − 55° to +125°C (Note 4)
3
⎮VIO⎮
Input Offset Voltage Temperature Coefficient (RS = 50 W)
TA = − 40° to +105°C
TA = − 55° to +125°C
4
Characteristic
Input Bias Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V)
TA = + 25°C
TA = − 40° to +105°C
TA = − 55° to +125°C
5, 6
DVIO/DT
⎮IIB⎮
Min
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
6.0
9.0
13
8.0
11
14
10
13
17
−
−
2.0
2.0
−
−
−
−
−
80
100
−
200
250
500
Unit
mV
mV/°C
nA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The differential input voltage of each amplifier is limited by two internal parallel back−to−back diodes. For additional differential input voltage
range, use current limiting resistors in series with the input pins.
2. The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage
on either input must not exceed either supply rail by more than 500 mV.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. (See Figure 2)
4. All NCV devices are qualified for Automotive use.
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3
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
DC ELECTRICAL CHARACTERISTICS (cont.) (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.)
Figure
Symbol
Input Offset Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V)
TA = + 25°C
TA = − 40° to +105°C
TA = − 55° to +125°C
−
⎮IIO⎮
Common Mode Input Voltage Range
−
VICR
Large Signal Voltage Gain (VCC = + 5.0 V, VEE = − 5.0 V)
RL = 10 kW
RL = 600 W
7
AVOL
Characteristic
Output Voltage Swing (VID = ± 0.2 V)
RL = 10 kW
RL = 10 kW
RL = 600 W
RL = 600 W
Min
Typ
Max
−
−
−
5.0
10
−
50
100
200
VEE
−
VCC
Unit
nA
V
kV/V
50
25
300
250
−
−
VOH
VOL
VOH
VOL
4.85
−
4.75
−
4.95
0.05
4.85
0.15
−
0.15
−
0.25
60
90
−
500
25
−
50
80
−
−
−
0.9
0.9
1.125
1.125
8, 9, 10
V
Common Mode Rejection (Vin = 0 V to 5.0 V)
11
CMR
Power Supply Rejection Ratio
VCC/VEE = 5.0 V/GND to 3.0 V/GND
12
PSRR
Output Short Circuit Current (Source and Sink)
13, 14
ISC
Power Supply Current per Amplifier (VO = 0 V)
TA = − 40° to +105°C
TA = − 55° to +125°C
15
ID
dB
mV/V
mA
mA
AC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.)
Characteristic
Slew Rate
(VS = ± 2.5 V, VO = − 2.0 V to + 2.0 V, RL = 2.0 kW, AV = +1.0)
Figure
Symbol
16, 26
SR
Min
Typ
Max
0.5
1.0
−
Unit
V/ms
Gain Bandwidth Product (f = 100 kHz)
17
GBW
−
2.2
−
MHz
Gain Margin (RL = 600 W, CL = 0 pF)
20, 21, 22
AM
−
12
−
dB
Phase Margin (RL = 600 W, CL = 0 pF)
20, 21, 22
OM
−
65
−
Deg
23
CS
−
90
−
dB
BWP
−
28
−
kHz
−
−
0.002
0.008
−
−
−
100
−
Rin
−
200
−
kW
Cin
−
8.0
−
pF
−
−
25
20
−
−
nV/
Hz
−
−
0.8
0.2
−
−
Channel Separation (f = 1.0 Hz to 20 kHz, AV = 100)
Power Bandwidth (VO = 4.0 Vpp, RL = 600 W, THD ≤ 1 %)
24
Total Harmonic Distortion (RL = 600 W, VO = 1.0 Vpp, AV = 1.0)
f = 1.0 kHz
f = 10 kHz
Open Loop Output Impedance
(VO = 0 V, f = 2.0 MHz, AV = 10)
THD
⎮ZO⎮
Differential Input Resistance (VCM = 0 V)
Differential Input Capacitance (VCM = 0 V)
Equivalent Input Noise Voltage (RS = 100 W)
f = 10 Hz
f = 1.0 kHz
25
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
25
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4
en
in
%
W
pA/
Hz
2500
40
PERCENTAGE OF AMPLIFIERS (%)
PD(max) , MAXIMUM POWER DISSIPATION (mW)
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
8 and 14 Pin DIP Pkg
2000
TSSOP-14 Pkg
1500
SO-14 Pkg
1000
SOIC-8
Pkg
500
0
-55 -40 -25
0
25
50
85
TA, AMBIENT TEMPERATURE (°C)
30
25
20
15
10
5.0
0
-10 -8.0 -6.0 -4.0 -2.0
0
2.0 4.0 6.0
VIO, INPUT OFFSET VOLTAGE (mV)
125
Figure 2. Maximum Power Dissipation
versus Temperature
I IB , INPUT BIAS CURRENT (nA)
30
160
120
20
10
0
-50 -40 -30 -20
-10
0
10
20
30
40
VCC = +5.0 V
VEE = Gnd
VCM = 0 V to 0.5 V
80
VCM > 1.0 V
40
0
-55 -40 -25
50
TCV , INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (mV/°C)
IO
A VOL , OPEN LOOP VOLTAGE GAIN (kV/V)
100
50
0
-50
-100
VCC = 12 V
VEE = Gnd
TA = 25°C
-200
0
2.0
4.0
6.0
8.0
10
VCM, INPUT COMMON MODE VOLTAGE (V)
25
70
85
125
Figure 5. Input Bias Current
versus Temperature
150
-150
0
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Input Offset Voltage
Temperature Coefficient Distribution
I IB , INPUT BIAS CURRENT (nA)
10
200
360 amplifiers tested from
3 (MC33204) wafer lots
VCC = +5.0 V
VEE = Gnd
TA = 25°C
DIP Package
40
-250
8.0
Figure 3. Input Offset Voltage Distribution
50
PERCENTAGE OF AMPLIFIERS (%)
360 amplifiers tested from
3 (MC33204) wafer lots
VCC = +5.0 V
VEE = Gnd
TA = 25°C
DIP Package
35
12
300
260
220
180
140
VCC = +5.0 V
VEE = Gnd
RL = 600 W
DVO = 0.5 V to 4.5 V
100
-55 -40 -25
Figure 6. Input Bias Current
versus Common Mode Voltage
0
25
70
85
TA, AMBIENT TEMPERATURE (°C)
105
Figure 7. Open Loop Voltage Gain versus
Temperature
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5
125
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
RL = 600 W
TA = 25°C
10
8.0
6.0
4.0
2.0
0
±1.0
VCC
VSAT, OUTPUT SATURATION VOLTAGE (V)
VO, OUTPUT VOLTAGE (Vpp )
12
±2.0
±3.0
±4.0
±5.0
VCC,⎮VEE⎮ SUPPLY VOLTAGE (V)
±6.0
TA = -55°C
TA = 125°C
VCC - 0.4 V
TA = -55°C
CMR, COMMON MODE REJECTION (dB)
VO, OUTPUT VOLTAGE (Vpp )
6.0
VCC = +6.0 V
VEE = -6.0 V
RL = 600 W
AV = +1.0
TA = 25°C
5.0
60
40
VCC = +6.0 V
VEE = -6.0 V
TA = -55° to +125°C
20
0
10
I SC , OUTPUT SHORT CIRCUIT CURRENT (mA)
PSR, POWER SUPPLY REJECTION (dB)
PSR+
80
60
PSR40
VCC = +6.0 V
VEE = -6.0 V
TA = -55° to +125°C
0
1.0 k
10 k
f, FREQUENCY (Hz)
100
1.0 k
10 k
f, FREQUENCY (Hz)
100 k
1.0 M
Figure 11. Common Mode Rejection
versus Frequency
100
100
VEE
20
15
80
1.0 M
120
10
10
IL, LOAD CURRENT (mA)
100
Figure 10. Output Voltage
versus Frequency
20
VEE + 0.2 V
Figure 9. Output Saturation Voltage
versus Load Current
9.0
10 k
100 k
f, FREQUENCY (Hz)
TA = 25°C
TA = 125°C
0
12
0
1.0 k
VEE + 0.4 V
VCC = +5.0 V
VEE = -5.0 V
Figure 8. Output Voltage Swing
versus Supply Voltage
3.0
VCC - 0.2 V
TA = 25°C
100 k
1.0 M
100
Source
80
60
Sink
40
VCC = +6.0 V
VEE = -6.0 V
TA = 25°C
20
0
0
1.0
2.0
3.0
4.0
5.0
⎮Vout⎮, OUTPUT VOLTAGE (V)
Figure 12. Power Supply Rejection
versus Frequency
Figure 13. Output Short Circuit Current
versus Output Voltage
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6
6.0
I CC , SUPPLY CURRENT PER AMPLIFIER (mA)
150
125
VCC = +5.0 V
VEE = Gnd
100
Source
75
Sink
50
25
0
-55 -40 -25
0
25
70 85
TA, AMBIENT TEMPERATURE (°C)
105
125
2.0
1.6
TA = 125°C
1.2
TA = 25°C
0.8
TA = -55°C
0.4
0
±0
±1.0
Figure 14. Output Short Circuit Current
versus Temperature
GBW, GAIN BANDWIDTH PRODUCT (MHz)
+Slew Rate
1.0
-Slew Rate
0.5
25
70
85
105
0
-55 -40 -25
0
25
70
85
105
Figure 16. Slew Rate
versus Temperature
Figure 17. Gain Bandwidth Product
versus Temperature
40
VS = ±6.0 V
TA = 25°C
RL = 600 W
80
30
120
1A
2A
10
A
1.0
TA, AMBIENT TEMPERATURE (°C)
50
-30
10 k
2.0
TA, AMBIENT TEMPERATURE (°C)
70
-10
VCC = +2.5 V
VEE = -2.5 V
f = 100 kHz
3.0
125
2B
1A - Phase, CL = 0 pF
1B - Gain, CL = 0 pF
2A - Phase, CL = 300 pF
2B - Gain, CL = 300 pF
100 k
1B
1.0 M
160
200
O , EXCESS PHASE (DEGREES)
, OPEN LOOP VOLTAGE GAIN (dB)
VOL
0
4.0
A VOL, OPEN LOOP VOLTAGE GAIN (dB)
SR, SLEW RATE (V/μ s)
VCC = +2.5 V
VEE = -2.5 V
VO = ±2.0 V
0
-55 -40 -25
±6.0
Figure 15. Supply Current per Amplifier
versus Supply Voltage with No Load
2.0
1.5
±2.0
±3.0
±4.0
±5.0
VCC, ⎮VEE⎮, SUPPLY VOLTAGE (V)
70
30
120
2A
10
-10
160
1A - Phase, VS = ±6.0 V
1B - Gain, VS = ±6.0 V
2A - Phase, VS = ±1.0 V
2B - Gain, VS = ±1.0 V
f, FREQUENCY (Hz)
100 k
1B
2B
200
1.0 M
f, FREQUENCY (Hz)
Figure 18. Voltage Gain and Phase
versus Frequency
Figure 19. Voltage Gain and Phase
versus Frequency
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7
80
1A
-30
10 k
240
10 M
40
CL = 0 pF
TA = 25°C
RL = 600 W
50
125
240
10 M
O , EXCESS PHASE (DEGREES)
I SC , OUTPUT SHORT CIRCUIT CURRENT (mA)
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
75
50
50
40
30
VCC = +6.0 V
VEE = -6.0 V
RL = 600 W
CL = 100 pF
40
30
20
20
10
10
Gain Margin
0
-55 -40 -25
0
25
70
85
105
O M , PHASE MARGIN (DEGREES)
60
A , GAIN MARGIN (dB)
M
O M , PHASE MARGIN (DEGREES)
60
60
60
VCC = +6.0 V
VEE = -6.0 V
TA = 25°C
45
30
15
0
0
125
10
100
Gain Margin
12
10
40
8.0
30
6.0
20
4.0
10
2.0
0
10
THD, TOTAL HARMONIC DISTORTION (%)
14
10
1.0
0
1.0 k
100
AV = 10
60
VCC = +6.0 V
VEE = -6.0 V
VO = 8.0 Vpp
TA = 25°C
30
1.0 k
10 k
f, FREQUENCY (Hz)
Figure 22. Gain and Phase Margin
versus Capacitive Load
Figure 23. Channel Separation
versus Frequency
VCC = +5.0 V
TA = 25°C
VO = 2.0 Vpp
VEE = -5.0 V
RL = 600 W
AV = 100
AV = 10
0.01
0.001
10
90
CL, CAPACITIVE LOAD (pF)
AV = 1000
0.1
AV = 100
120
0
100
AV = 1.0
100
1.0 k
10 k
100 k
en , EQUIVALENT INPUT NOISE VOLTAGE (nV/ Hz)
50
0
100 k
150
CS, CHANNEL SEPARATION (dB)
60
10 k
Figure 21. Gain and Phase Margin
versus Differential Source Resistance
16
Phase Margin
1.0 k
RT, DIFFERENTIAL SOURCE RESISTANCE (W)
A , GAIN MARGIN (dB)
M
O M , PHASE MARGIN (DEGREES)
70
15
Gain Margin
Figure 20. Gain and Phase Margin
versus Temperature
VCC = +6.0 V
VEE = -6.0 V
RL = 600 W
AV = 100
TA = 25°C
45
30
TA, AMBIENT TEMPERATURE (°C)
80
75
Phase Margin
A , GAIN MARGIN (dB)
M
70
Phase Margin
50
5.0
VCC = +6.0 V
VEE = -6.0 V
TA = 25°C
40
30
3.0
Noise Voltage
20
10
2.0
1.0
Noise Current
0
10
f, FREQUENCY (Hz)
100
1.0 k
10 k
f, FREQUENCY (Hz)
Figure 24. Total Harmonic Distortion
versus Frequency
Figure 25. Equivalent Input Noise Voltage
and Current versus Frequency
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8
4.0
0
100 k
i n , INPUT REFERRED NOISE CURRENT (pA/ Hz)
70
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
DETAILED OPERATING DESCRIPTION
Circuit Information
The MC33201/2/4 family of operational amplifiers are
unique in their ability to swing rail−to−rail on both the input
and the output with a completely bipolar design. This offers
low noise, high output current capability and a wide
common mode input voltage range even with low supply
voltages. Operation is guaranteed over an extended
temperature range and at supply voltages of 2.0 V, 3.3 V and
5.0 V and ground.
Since the common mode input voltage range extends from
VCC to VEE, it can be operated with either single or split
voltage supplies. The MC33201/2/4 are guaranteed not to
latch or phase reverse over the entire common mode range,
however, the inputs should not be allowed to exceed
maximum ratings.
Rail−to−rail performance is achieved at the input of the
amplifiers by using parallel NPN−PNP differential input
stages. When the inputs are within 800 mV of the negative
rail, the PNP stage is on. When the inputs are more than 800
mV greater than VEE, the NPN stage is on. This switching of
input pairs will cause a reversal of input bias currents (see
Figure 6). Also, slight differences in offset voltage may be
noted between the NPN and PNP pairs. Cross−coupling
techniques have been used to keep this change to a minimum.
In addition to its rail−to−rail performance, the output stage
is current boosted to provide 80 mA of output current,
enabling the op amp to drive 600 W loads. Because of this
high output current capability, care should be taken not to
exceed the 150°C maximum junction temperature.
VCC = +6.0 V
VEE = -6.0 V
RL = 600 W
CL = 100 pF
TA = 25°C
VCC = +6.0 V
VEE = -6.0 V
RL = 600 W
CL = 100 pF
TA = 25°C
V , OUTPUT VOLTAGE (50 mV/DIV)
O
V , OUTPUT VOLTAGE (2.0 mV/DIV)
O
General Information
t, TIME (10 ms/DIV)
t, TIME (5.0 ms/DIV)
V , OUTPUT VOLTAGE (2.0 V/DIV)
O
Figure 26. Noninverting Amplifier Slew Rate
Figure 27. Small Signal Transient Response
VCC = +6.0 V
VEE = -6.0 V
RL = 600 W
CL = 100 pF
AV = 1.0
TA = 25°C
t, TIME (10 ms/DIV)
Figure 28. Large Signal Transient Response
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self−align when subjected to a
solder reflow process.
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9
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
ORDERING INFORMATION
Operational
Amplifier Function
Device
MC33201DG
MC33201DR2G
Single
Operating
Temperature Range
TA= −40° to +105°C
Package
SOIC−8
(Pb−Free)
MC33201VDG
MC33201VDR2G
Dual
2500 / Tape & Reel
SOIC−8
(Pb−Free)
TA= −40 ° to +105°C
NCV33202DMR2G*
MC33202VDG
MC33202VDR2G
TA = −55° to 125°C
Micro−8
(Pb−Free)
SOIC−8
(Pb−Free)
SO−14
(Pb−Free)
MC33204DG
MC33204DTBG
TA= −40 ° to +105°C
MC33204DTBR2G
Quad
MC33204VDR2G
NCV33204DR2G*
TSSOP−14
(Pb−Free)
SO−14
(Pb−Free)
MC33204VDG
2500 / Tape & Reel
4000 / Tape & Reel
98 Units / Rail
55 Units / Rail
2500 Units / Tape & Reel
96 Units / Rail
2500 Units / Tape & Reel
55 Units / Rail
2500 Units / Tape & Reel
TA = −55° to 125°C
NCV33204DTBR2G*
98 Units / Rail
2500 / Tape & Reel
NCV33202VDR2G*
MC33204DR2G
2500 / Tape & Reel
2500 / Tape & Reel
TA = −55° to 125°C
MC33202DG
MC33202DMR2G
98 Units / Rail
98 Units / Rail
NCV33201VDR2G
MC33202DR2G
Shipping†
TSSOP−14
(Pb−Free)
2500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
www.onsemi.com
10
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
MARKING DIAGRAMS
8
1
8
3320x
ALYW
G
1
320xV
ALYW
G
PDIP−8
VP SUFFIX
CASE 626
PDIP−8
P SUFFIX
CASE 626
SOIC−8
VD SUFFIX
CASE 751
SOIC−8
D SUFFIX
CASE 751
*
8
8
MC3320xP
AWL
YYWWG
14
MC33204VDG
AWLYWW
1
*
MC33204P
AWLYYWWG
1
**
MC33204VP
AWLYYWWG
1
MC33
204
ALYWG
G
1
1
x
= 1 or 2
A
= Assembly Location
WL, L = Wafer Lot
YY, Y
= Year
WW, W = Work Week
G
= Pb−Free Package
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This marking diagram applies to NCV3320xV
**This marking diagram applies to NCV33202DMR2G
11
MC33204DG
AWLYWW
TSSOP−14
DTB SUFFIX
CASE 948G
14
14
www.onsemi.com
14
1
PDIP−14
VP SUFFIX
CASE 646
14
SO−14
D SUFFIX
CASE 751A
3202
AYWG
G
1
PDIP−14
P SUFFIX
CASE 646
14
8
MC33202VP
AWL
YYWWG
1
SO−14
VD SUFFIX
CASE 751A
Micro−8
DM SUFFIX
CASE 846A
MC33
204V
ALYWG
G
1
*
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PACKAGE DIMENSIONS
PDIP−8
P, VP SUFFIX
CASE 626−05
ISSUE N
D
A
E
H
8
5
E1
1
4
NOTE 8
b2
c
B
END VIEW
TOP VIEW
WITH LEADS CONSTRAINED
NOTE 5
A2
A
e/2
NOTE 3
L
SEATING
PLANE
A1
C
D1
M
e
8X
SIDE VIEW
b
0.010
eB
END VIEW
M
C A
M
B
M
NOTE 6
www.onsemi.com
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
DIM
A
A1
A2
b
b2
C
D
D1
E
E1
e
eB
L
M
INCHES
MIN
MAX
−−−−
0.210
0.015
−−−−
0.115 0.195
0.014 0.022
0.060 TYP
0.008 0.014
0.355 0.400
0.005
−−−−
0.300 0.325
0.240 0.280
0.100 BSC
−−−−
0.430
0.115 0.150
−−−−
10 °
MILLIMETERS
MIN
MAX
−−−
5.33
0.38
−−−
2.92
4.95
0.35
0.56
1.52 TYP
0.20
0.36
9.02
10.16
0.13
−−−
7.62
8.26
6.10
7.11
2.54 BSC
−−−
10.92
2.92
3.81
−−−
10 °
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
13
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PACKAGE DIMENSIONS
Micro8
DM SUFFIX
CASE 846A−02
ISSUE H
D
HE
PIN 1 ID
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
E
e
b 8 PL
0.08 (0.003)
M
T B
S
A
S
SEATING
PLANE
A
0.038 (0.0015)
A1
MILLIMETERS
NOM
MAX
−−
1.10
0.08
0.15
0.33
0.40
0.18
0.23
3.00
3.10
3.00
3.10
0.65 BSC
0.40
0.55
0.70
4.75
4.90
5.05
DIM
A
A1
b
c
D
E
e
L
HE
MIN
−−
0.05
0.25
0.13
2.90
2.90
L
c
SOLDERING FOOTPRINT*
1.04
8X
0.041
0.38
0.015
3.20
0.126
6X
8X
4.24
0.167
0.65
0.0256
5.28
0.208
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
INCHES
NOM
−−
0.003
0.013
0.007
0.118
0.118
0.026 BSC
0.016
0.021
0.187
0.193
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
0.028
0.199
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PACKAGE DIMENSIONS
PDIP−14
CASE 646−06
ISSUE R
D
14
A
8
E
H
E1
1
NOTE 8
7
b2
c
B
TOP VIEW
END VIEW
WITH LEADS CONSTRAINED
NOTE 5
A2
A
NOTE 3
L
SEATING
PLANE
A1
C
D1
e
M
eB
END VIEW
14X b
SIDE VIEW
0.010
M
C A
M
B
M
NOTE 6
www.onsemi.com
15
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3.
4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
6. DIMENSION E3 IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BODY.
8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
DIM
A
A1
A2
b
b2
C
D
D1
E
E1
e
eB
L
M
INCHES
MIN
MAX
−−−−
0.210
0.015
−−−−
0.115 0.195
0.014 0.022
0.060 TYP
0.008 0.014
0.735 0.775
0.005
−−−−
0.300 0.325
0.240 0.280
0.100 BSC
−−−−
0.430
0.115 0.150
−−−−
10 °
MILLIMETERS
MIN
MAX
−−−
5.33
0.38
−−−
2.92
4.95
0.35
0.56
1.52 TYP
0.20
0.36
18.67 19.69
0.13
−−−
7.62
8.26
6.10
7.11
2.54 BSC
−−−
10.92
2.92
3.81
−−−
10 °
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE K
D
A
B
14
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
b
0.25
M
C A
S
B
S
DETAIL A
h
A
e
DIM
A
A1
A3
b
D
E
e
H
h
L
M
X 45 _
M
A1
C
SEATING
PLANE
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
16
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
MC33201, MC33202, MC33204, NCV33201, NCV33202, NCV33204
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÇÇÇ
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
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17
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For additional information, please contact your local
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MC33201/D