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MC33260DR2

MC33260DR2

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOIC8_150MIL

  • 描述:

    PFC IC Discontinuous Conduction (DCM) 8-SOIC

  • 数据手册
  • 价格&库存
MC33260DR2 数据手册
MC33260 GreenLinet Compact Power Factor Controller: Innovative Circuit for Cost Effective Solutions The MC33260 is a controller for Power Factor Correction preconverters meeting international standard requirements in electronic ballast and off--line power conversion applications. Designed to drive a free frequency discontinuous mode, it can also be synchronized and in any case, it features very effective protections that ensure a safe and reliable operation. This circuit is also optimized to offer extremely compact and cost effective PFC solutions. While it requires a minimum number of external components, the MC33260 can control the follower boost operation that is an innovative mode allowing a drastic size reduction of both the inductor and the power switch. Ultimately, the solution system cost is significantly lowered. Also able to function in a traditional way (constant output voltage regulation level), any intermediary solutions can be easily implemented. This flexibility makes it ideal to optimally cope with a wide range of applications. Standard Constant Output Voltage or “Follower Boost” Mode Switch Mode Operation: Voltage Mode Latching PWM for Cycle--by--Cycle On--Time Control Constant On--Time Operation That Saves the Use of an Extra Multiplier Totem Pole Output Gate Drive Undervoltage Lockout with Hysteresis Low Startup and Operating Current Improved Regulation Block Dynamic Behavior Synchronization Capability Internally Trimmed Reference Current Source These are Pb--Free Devices Safety Features D1...D4 Filtering Capacitor L1 Vcontrol R cs 8 1 8 SO--8 D SUFFIX CASE 751 CT ROCP 1 2 3 4 8 7 6 5 + C1 M1 Ro 1 33260 ALYW G 1 A WL, L YY, Y WW, W G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb--Free Package PIN CONNECTIONS Feedback Input 1 8 VCC Vcontrol 2 7 Gate Drive 3 6 Gnd 4 5 Synchronization Input MC33260P Oscillator Capacitor (CT) Current Sense Input Synchronization Input Gnd D1 V CC MC33260P AWL YYWWG PDIP--8 P SUFFIX CASE 626 Oscillator Capacitor (CT) Current Sense Input Overvoltage Protection: Output Overvoltage Detection Undervoltage Protection: Protection Against Open Loop Effective Zero Current Detection Accurate and Adjustable Maximum On--Time Limitation Overcurrent Protection ESD Protection on Each Pin MC33260       MARKING DIAGRAMS 8 General Features            http://onsemi.com LOAD (SMPS, Lamp Ballast,...) 1 8 Vcontrol 2 7 Feedback Input 3 6 VCC 5 Gate Drive 4 MC33260D ORDERING INFORMATION Sync DIP--8 CONFIGURATION SHOWN See detailed ordering and shipping information in the package dimensions section on page 20 of this data sheet. Figure 1. Typical Application  Semiconductor Components Industries, LLC, 2010 November, 2010 -- Rev. 11 1 Publication Order Number: MC33260/D MC33260 Vo Current Mirror IOSC -- ch = Io 2 x IO x IO Iref Io Io CT Io 1 0 Current Mirror Iref Vref 11 V FB 1.5 V 15 pF Io 97%Iref 300 k Vreg Vcontrol Iref Output_Ctrl IovpH/IovpL Vref REGULATOR 11 V + Iref Enable -- OVP r Iuvp r -- 11 V/8.5 V + + UVP -- Ics (205 mA) 1 Synchro r --60 mV 0 11 V + Current Sense LEB 11 V Synchro Arrangement -- VCC Output_Ctrl ThStdwn Drive Gnd S R + R -- R Q PWM Latch Output_Ctrl Q PWM Comparator MC33260 Figure 2. Block Diagram http://onsemi.com 2 MC33260 MAXIMUM RATINGS Pin # PDIP--8 Pin # SO--8 Gate Drive Current* Source Sink 7 5 VCC Maximum Voltage 8 Rating Symbol Value Unit IO(Source) IO(Sink) --500 500 (Vcc)max 16 V Vin --0.3 to +10 V PD RθJA 600 100 mW C/W Operating Junction Temperature TJ 150 C Operating Ambient Temperature TA --40 to +105 C mA 6 Input Voltage Power Dissipation and Thermal Characteristics P Suffix, PDIP Package Maximum Power Dissipation @ TA = 85C Thermal Resistance Junction--to--Air Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (VCC = 13 V, TJ = 25C for typical values, TJ = --40 to 105C for min/max values unless otherwise noted.) Pin # PDIP--8 Pin # SO--8 Gate Drive Resistor Source Resistor @ IDrive = 100 mA Sink Resistor @ IDrive = 100 mA 7 5 Gate Drive Voltage Rise Time (From 3.0 V Up to 9.0 V) (Note 1) 7 Output Voltage Falling Time (From 9.0 V Down to 3.0 V) (Note 1) Symbol Min Typ Max ROL ROH 10 5 20 10 35 25 5 tr -- 50 -- ns 7 5 tf -- 50 -- ns Maximum Oscillator Swing 3 1 ΔVT 1.4 1.5 1.6 V Charge Current @ IFB = 100 mA 3 1 Icharge 87.5 100 112.5 mA Charge Current @ IFB = 200 mA 3 1 Icharge 350 400 450 mA Ratio Multiplier Gain Over Maximum Swing @ IFB = 100 mA 3 1 Kosc 5600 6400 7200 1/(V.A) Ratio Multiplier Gain Over Maximum Swing @ IFB = 200 mA 3 1 Kosc 5600 6400 7200 1/(V.A) Average Internal Oscillator Pin Capacitance Over Oscillator Maximum Swing (CT Voltage Varying From 0 Up to 1.5 V) (Note 2) 3 1 Cint 10 15 20 pF Discharge Time (CT = 1.0 nF) 3 1 Tdisch -- 0.5 1.0 ms Regulation High Current Reference 1 7 IregH 192 200 208 mA Ratio (Regulation Low Current Reference) / IregH 1 7 IregL / IregH 0.965 0.97 0.98 -- Vcontrol Impedance 1 7 ZVcontrol -- 300 -- kΩ Characteristic Unit GATE DRIVE SECTION Ω OSCILLATOR SECTION REGULATION SECTION NOTE: IFB is the current that is drawn by the Feedback Input Pin. 1. 1.0 nF being connected between the Pin 7 and ground for PDIP--8, between Pin 5 and ground for SO--8. 2. Guaranteed by design. http://onsemi.com 3 MC33260 ELECTRICAL CHARACTERISTICS (VCC = 13 V, TJ = 25C for typical values, TJ = --40 to 105C for min/max values unless otherwise noted.) Pin # PDIP--8 Pin # SO--8 Symbol Min Typ Max Unit Feedback Pin Clamp Voltage @ IFB = 100 mA 1 7 VFB--100 1.5 2.1 2.5 V Feedback Pin Clamp Voltage @ IFB = 200 mA 1 7 VFB--200 2.0 2.6 3.0 V Zero Current Detection Comparator Threshold 4 2 VZCD--th --90 --60 --30 mV Negative Clamp Level (ICS--pin = --1.0 mA) 4 2 Cl--neg -- --0.7 -- V Bias Current @ Vcs = VZCD--th 4 2 Ib--cs --0.2 -- -- mA Propagation Delay (Vcs > VZCD--th) to Gate Drive High 7 5 TZCD -- 500 -- ns Current Sense Pin Internal Current Source 4 2 IOCP 192 205 218 mA LEB -- 400 -- ns Characteristic REGULATION SECTION (continued) CURRENT SENSE SECTION Leading Edge Blanking Duration OverCurrent Protection Propagation Delay (Vcs < VZCD--th to Gate Drive Low) 7 5 TOCP 100 160 240 ns Synchronization Threshold PDIP--8 SO--8 5 -- -3 Vsync--th Vsync--th 0.8 0.8 1.0 1.0 1.2 1.4 V V Negative Clamp Level (Isync = --1.0 mA) 5 3 Cl--neg -- --0.7 -- V Minimum Off--Time 7 5 Toff 1.5 2.1 2.7 ms Minimum Required Synchronization Pulse Duration 5 3 Tsync -- -- 0.5 ms OverVoltage Protection High Current Threshold and IregH Difference 1 7 IOVPH --IregH 8.0 13 18 mA OverVoltage Protection Low Current Threshold and IregH Difference 1 7 IOVPL --IregH 0 -- -- -- Ratio (IOVPH/IOVPL) 1 7 IOVPH / IOVPL 1.02 -- -- -- Propagation Delay (IFB > 110% Iref to Gate Drive Low) 7 5 TOVP -- 500 -- ns Ratio (UnderVoltage Protection Current Threshold) / IregH 1 7 IUVP/IregH 12 14 16 % Propagation Delay (IFB < 12% Iref to Gate Drive Low) 7 5 TUVP -- 500 -- ns Thermal Shutdown Threshold 7 5 Tstdwn — 150 -- C Hysteresis 7 5 ΔTstdwn -- 30 -- C Startup Threshold 8 6 Vstup--th 9.7 11 12.3 V Disable Voltage After Threshold Turn--On 8 6 Vdisable 7.4 8.5 9.6 V 8 6 ICC --- 0.1 4.0 0.25 8.0 SYNCHRONIZATION SECTION OVERVOLTAGE PROTECTION SECTION UNDERVOLTAGE PROTECTION SECTION THERMAL SHUTDOWN SECTION VCC UNDERVOLTAGE LOCKOUT SECTION TOTAL DEVICE Power Supply Current Startup (VCC = 5 V with VCC Increasing) Operating @ IFB = 200 mA NOTE: Vcs is the Current Sense Pin Voltage and IFB is the Feedback Pin Current. http://onsemi.com 4 mA MC33260 1.6 Vcontrol : REGULATION BLOCK OUTPUT (V) Vcontrol : REGULATION BLOCK OUTPUT (V) Pin Numbers are Relevant to the PDIP--8 Version 1.4 1.2 1.0 0.8 0.6 -- 40C 0.4 25C 0.2 105C 0 0 20 40 60 80 100 120 140 160 180 200 220 240 1.6 -- 40C 1.4 25C 1.2 105C 1.0 0.8 0.6 0.4 0.2 0 185 190 1.340 3.5 1.335 3.0 1.330 1.325 1.320 1.315 1.310 1.305 --20 0 20 40 60 80 1.5 100 -- 40C 1.0 25C 0.5 0 105C 0 20 40 350 105C 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 220 240 Figure 6. Feedback Input Voltage versus Feedback Current I osc--ch , OSCILLATOR CHARGE CURRENT ( m A) I osc--ch , OSCILLATOR CHARGE CURRENT ( m A) 25C 60 Ipin1: FEEDBACK CURRENT (mA) 500 400 210 2.0 Figure 5. Maximum Oscillator Swing versus Temperature 450 205 2.5 JUNCTION TEMPERATURE (C) -- 40C 200 Figure 4. Regulation Block Output versus Feedback Current FEEDBACK INPUT VOLTAGE (V) MAXIMUM OSCILLATOR SWING (V) Figure 3. Regulation Block Output versus Feedback Current 1.300 --40 195 Ipin1: FEEDBACK CURRENT (mA) Ipin1: FEEDBACK CURRENT (mA) 80 100 120 140 160 180 200 220 240 410 Ipin1 = 200 mA 405 400 395 390 385 --40 --20 0 20 40 60 80 JUNCTION TEMPERATURE (C) Ipin1: FEEDBACK CURRENT (mA) Figure 7. Oscillator Charge Current versus Feedback Current Figure 8. Oscillator Charge Current versus Temperature http://onsemi.com 5 100 MC33260 Pin Numbers are Relevant to the PDIP--8 Version 120 103 Ipin1 = 100 mA -- 40C 100 102 ON--TIME ( s) OSCILLATOR CHARGE CURRENT ( A) 104 101 100 99 25C 105C 80 1 nF Connected to Pin 3 60 40 20 98 97 --40 --20 0 20 40 60 80 0 100 30 50 TJ, JUNCTION TEMPERATURE (C) REGULATION AND CS CURRENT SOURCE ( A) -- 40C ON--TIME ( s) 25C 105C 1 nF Connected to Pin 3 45 35 25 15 60 50 70 80 130 150 170 190 210 90 100 207 IOCP 206 205 204 203 202 IregH 201 200 199 198 197 --40 --20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) Ipin1: FEEDBACK CURRENT (mA) Figure 11. On--Time versus Feedback Current Figure 12. Internal Current Sources versus Temperature 1.07 0.150 1.06 (IovpH/Iref) 1.05 1.04 1.03 1.02 1.01 UNDERVOLTAGE RATIO (I uvp /I ref ) (IovpH /I ref ), (I ovpL /I ref ), (I regL /I ref ) 110 Figure 10. On--Time versus Feedback Current 75 55 90 Ipin1: FEEDBACK CURRENT (mA) Figure 9. Oscillator Charge Current versus Temperature 65 70 (IovpL/Iref) 1.00 0.99 0.98 0.97 0.96 --40 (IregL/Iref) --20 0 20 40 60 80 100 0.148 0.146 0.144 0.142 0.140 0.138 0.136 0.134 0.132 0.130 --40 TJ, JUNCTION TEMPERATURE (C) --20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (C) Figure 13. (IovpH/Iref), (IovpL/Iref), (IregL/Iref) versus Temperature Figure 14. Undervoltage Ratio versus Temperature http://onsemi.com 6 100 MC33260 --54.8 4.5 --55 4.0 -- 40C 3.5 25C 3.0 105C I CC , CIRCUIT CONSUMPTION (mA) CURRENT SENSE THRESHOLD (mV) Pin Numbers are Relevant to the PDIP--8 Version --55.2 --55.4 --55.6 --55.8 --56 --56.2 --56.4 --56.6 --40 --20 0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0 2 0 TJ, JUNCTION TEMPERATURE (C) 6 8 10 12 14 16 VCC: SUPPLY VOLTAGE (V) Figure 16. Circuit Consumption versus Supply Voltage Figure 15. Current Sense Threshold versus Temperature OSCILLATOR PIN INTERNAL CAPACITANCE (pF) 4 Vgate 20 --40C 15 25C VCC = 12 V Cgate = 1 nF 1 25C 10 Icross--cond (50 mA/div) 105C 5 2 0 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 Ch1 10.0 V Ch2 10.0 mVΩ M 1.00 ms Ch1 600 mV Vcontrol: PIN 2 VOLTAGE (V) Figure 17. Oscillator Pin Internal Capacitance Figure 18. Gate Drive Cross Conduction Vgate Vgate -- 40C VCC = 12 V Cgate = 1 nF 1 105C VCC = 12 V Cgate = 1 nF 1 Icross--cond (50 mA/div) Icross--cond (50 mA/div) 2 2 Ch1 10.0 V Ch2 10.0 mVΩ M 1.00 ms Ch1 600 mV Ch1 Figure 19. Gate Drive Cross Conduction 10.0 V Ch2 10.0 mVΩ M 1.00 ms Ch1 Figure 20. Gate Drive Cross Conduction http://onsemi.com 7 600 mV MC33260 PIN FUNCTION DESCRIPTION Pin # PDIP--8 Pin # SO--8 Function Description 1 7 Feedback Input This pin is designed to receive a current that is proportional to the preconverter output voltage. This information is used for both the regulation and the overvoltage and undervoltage protections. The current drawn by this pin is internally squared to be used as oscillator capacitor charge current. 2 8 Vcontrol This pin makes available the regulation block output. The capacitor connected between this pin and ground, adjusts the control bandwidth. It is typically set below 20 Hz to obtain a nondistorted input current. 3 1 Oscillator Capacitor (CT) The circuit uses an on--time control mode. This on--time is controlled by comparing the CT voltage to the Vcontrol voltage. CT is charged by the squared feedback current. 4 2 Zero Current Detection Input This pin is designed to receive a negative voltage signal proportional to the current flowing through the inductor. This information is generally built using a sense resistor. The Zero Current Detection prevents any restart as long as the Pin 4 voltage is below (--60 mV). This pin is also used to perform the peak current limitation. The overcurrent threshold is programmed by the resistor connected between the pin and the external current sense resistor. 5 3 Synchronization Input This pin is designed to receive a synchronization signal. For instance, it enables to synchronize the PFC preconverter to the associated SMPS. If not used, this pin must be grounded. 6 4 Ground 7 5 Gate Drive 8 6 VCC This pin must be connected to the preregulator ground. The gate drive current capability is suited to drive an IGBT or a power MOSFET. This pin is the positive supply of the IC. The circuit turns on when VCC becomes higher than 11 V, the operating range after startup being 8.5 V up to 16 V. Filtering Capacitor D1...D4 L1 D1 + C1 2 Vcontrol ROCP 3 4 CT 8 MC33260 1 Load (SMPS, Lamp Ballast,...) VCC M1 7 Ro 6 5 Sync Rcs DIP--8 CONFIGURATION SHOWN Figure 21. Application Schematic http://onsemi.com 8 MC33260 FUNCTIONAL DESCRIPTION Pin Numbers are Relevant to the PDIP--8 Version INTRODUCTION OPERATION DESCRIPTION The need of meeting the requirements of legislation on line current harmonic content, results in an increasing demand for cost effective solutions to comply with the Power Factor regulations. This data sheet describes a monolithic controller specially designed for this purpose. Most off--line appliances use a bridge rectifier associated to a huge bulk capacitor to derive raw dc voltage from the utility ac line. The MC33260 is optimized to just as well drive a free running as a synchronized discontinuous voltage mode. It also features valuable protections (overvoltage and undervoltage protection, overcurrent limitation, ...) that make the PFC preregulator very safe and reliable while requiring very few external components. In particular, it is able to safely face any uncontrolled direct charges of the output capacitor from the mains which occur when the output voltage is lower than the input voltage (startup, overload, ...). In addition to the low count of elements, the circuit can control an innovative mode named “Follower Boost” that permits to significantly reduce the size of the preconverter inductor and power MOSFET. With this technique, the output regulation level is not forced to a constant value, but can vary according to the a.c. line amplitude and to the power. The gap between the output voltage and the ac line is then lowered, what allows the preconverter inductor and power MOSFET size reduction. Finally, this method brings a significant cost reduction. A description of the functional blocks is given below. Rectifiers AC Line Converter + Bulk Storage Capacitor Load Figure 22. Typical Circuit Without PFC This technique results in a high harmonic content and in poor power factor ratios. In effect, the simple rectification technique draws power from the mains when the instantaneous ac voltage exceeds the capacitor voltage. This occurs near the line voltage peak and results in a high charge current spike. Consequently, a poor power factor (in the range of 0.5 -- 0.7) is generated, resulting in an apparent input power that is much higher than the real power. REGULATION SECTION Connecting a resistor between the output voltage to be regulated and the Pin 1, a feedback current is obtained. Typically, this current is built by connecting a resistor between the output voltage and the Pin 1. Its value is then given by the following equation: Vpk Rectified DC 0 I Line Sag 0 Figure 23. Line Waveforms Without PFC Active solutions are the most popular way to meet the legislation requirements. They consist of inserting a PFC pre--regulator between the rectifier bridge and the bulk capacitor. This interface is, in fact, a step--up SMPS that outputs a constant voltage while drawing a sinusoidal current from the line. pin1 Ro Regulation Block Output 1.5 V Io Load + Vo − V Converter Bulk Storage Capacitor MC33260 AC Line PFC Preconverter High Frequency Bypass Capacitor Rectifiers = where: Ro is the feedback resistor, Vo is the output voltage, Vpin1 is the Pin 1 clamp value. The feedback current is compared to the reference current so that the regulation block outputs a signal following the characteristic depicted in Figure 25. According to the power and the input voltage, the output voltage regulation level varies between two values (Vo)regL and (Vo)regH corresponding to the IregL and IregH levels. AC Line Voltage AC Line Current pin1 IregL (97%Iref) IregH (Iref) Figure 25. Regulation Characteristic Figure 24. PFC Preconverter The feedback resistor must be chosen so that the feedback current should equal the internal current source IregH when the output voltage exceeds the chosen upper regulation voltage [(Vo)regH]. The MC33260 was developed to control an active solution with the goal of increasing its robustness while lowering its global cost. http://onsemi.com 9 MC33260 Pin Numbers are Relevant to the PDIP--8 Version Consequently: Ro = V o where: Vo is the output voltage, Ro is the feedback resistor, Vpin1 is the Pin 1 clamp voltage. In practice, Vpin1 that is in the range of 2.5 V, is very small compared to Vo. The equation can then be simplified by neglecting Vpin1: −V regH pin1 I regH In practice, Vpin1 is small compared to (Vo)regH and this equation can be simplified as follows (IregH being also replaced by its typical value 200 mA R o ≈ 5 × V o regH (kΩ) I The regulation block output is connected to the Pin 2 through a 300 kΩ resistor. The Pin 2 voltage (Vcontrol) is compared to the oscillator sawtooth for PWM control. An external capacitor must be connected between Pin 2 and ground, for external loop compensation. The bandwidth is typically set below 20 Hz so that the regulation block output should be relatively constant over a given ac line cycle. This integration that results in a constant on--time over the ac line period, prevents the mains frequency output ripple from distorting the ac line current. C 0 =C +C T int 1 0 t on = 15 pF The oscillator charge current is dependent on the feedback current (Io). In effect I2 =2× o charge I ref t onmax = where: Icharge is the oscillator charge current, Io is the feedback current (drawn by Pin 1), Iref is the internal reference current (200 mA So, the oscillator charge current is linked to the output voltage level as follows:  ×V I control ch R2 o×I ref ×C pin3 2 × V2 o ×V control C pin3 × R2 o×I ref  × V 2 × V2 o  control max This equation can be simplified replacing [(Vcontrol)2max * Iref] by Kosc Refer to Electrical Characteristics, Oscillator Section. Then: 2 2 C × Ro t on max = pin3 2 × Vo − V pin1 R2 o×I pin3 One can notice that the on--time depends on Vo (preconverter output voltage) and that the on--time is maximum when Vcontrol is maximum (1.5 V typically). At a given Vo, the maximum on--time is then expressed by the following equation: Figure 26. Oscillator  C where: ton is the on--time, Cpin3 is the total oscillator capacitor (sum of the internal and external capacitor), Icharge is the oscillator charge current (Pin 3 current), Vcontrol is the Pin 2 voltage (regulation block output). Consequently, replacing Icharge by the expression given in the Oscillator Section: Output_Ctrl 3 = pin3 t on = CT charge ref The MC33260 operates in voltage mode: the regulation block output (Vcontrol -- Pin 2 voltage) is compared to the oscillator sawtooth so that the gate drive signal (Pin 7) is high until the oscillator ramp exceeds Vcontrol. The on--time is then given by the following equation: Icharge = 2 ¢ Io ¢ Io / Iref I R2 o×I PWM LATCH SECTION The oscillator consists of three phases:  Charge Phase: The oscillator capacitor voltage grows up linearly from its bottom value (ground) until it exceeds Vcontrol (regulation block output voltage). At that moment, the PWM latch output gets low and the oscillator discharge sequence is set.  Discharge Phase: The oscillator capacitor is abruptly discharged down to its valley value (0 V).  Waiting Phase: At the end of the discharge sequence, the oscillator voltage is maintained in a low state until the PWM latch is set again. I 2 × V2 o It must be noticed that the oscillator terminal (Pin 3) has an internal capacitance (Cint) that varies versus the Pin 3 voltage. Over the oscillator swing, its average value typically equals 15 pF (min 10 pF, max 20 pF). The total oscillator capacitor is then the sum of the internal and external capacitors. OSCILLATOR SECTION 1 charge ≈ K osc × V 2 o ref http://onsemi.com 10 MC33260 Pin Numbers are Relevant to the PDIP--8 Version Zero Current Detection This equation shows that the maximum on--time is inversely proportional to the squared output voltage. This property is used for follower boost operation (refer to Follower Boost section). The Zero Current Detection function guarantees that the MOSFET cannot turn on as long as the inductor current hasn’t reached zero (discontinuous mode). The Pin 4 voltage is simply compared to the (--60 mV) threshold so that as long as Vcs is lower than this threshold, the circuit gate drive signal is kept in low state. Consequently, no power MOSFET turn on is possible until the inductor current is measured as smaller than (60 mV/Rcs) that is, the inductor current nearly equals zero. CURRENT SENSE BLOCK The inductor current is converted into a voltage by inserting a ground referenced resistor (Rcs) in series with the input diodes bridge (and the input filtering capacitor). Therefore a negative voltage proportional to the inductor current is built: V cs = -- R cs × I  L Iocp (205 mA) D1...D4 where: IL is the inductor current, Rcs is the current sense resistor, Vcs is the measured Rcs voltage. 1 0 ROCP Inductor Current Power Switch Drive Rcs VOCP S Output_Ctrl --60 mV 4 LEB + -- PWM Latch Output_Ctrl R Q R To Output Buffer (Output_Ctrl Low Gate Drive in Low State) Figure 28. Current Sense Block Time Overcurrent Protection Rcs Voltage During the power switch conduction (i.e. when the Gate Drive Pin voltage is high), a current source is applied to the Pin 4. A voltage drop VOCP is then generated across the resistor ROCP that is connected between the sense resistor and the Current Sense Pin (refer to Figure 28). So, instead of Vcs, the sum (Vcs + VOCP) is compared to (--60 mV) and the maximum permissible current is the solution of the following equation: -- R cs × Ipk max + V Pin 4 Voltage VOCP OCP = --60 mV where: Ipkmax is maximum allowed current, Rcs is the sensing resistor. The overcurrent threshold is then: --60 mV Zero Current Detection Ipk max = VOCP = ROCP ¢ IOCP An overcurrent is detected if Vpin4 crosses the threshold (--60 mV) during the Power Switch on state ROCP × IOCP + 60 × 10 --3 R cs where: ROCP is the resistor connected between the pin and the sensing resistor (Rcs), IOCP is the current supplied by the Current Sense Pin when the gate drive signal is high (power switch conduction phase). IOCP equals 205 mA typically. Practically, the VOCP offset is high compared to 60 mV and the precedent equation can be simplified. The maximum current is then given by the following equation: Figure 27. Current Sensing The negative signal Vcs is applied to the current sense through a resistor ROCP. The pin is internally protected by a negative clamp (--0.7 V) that prevents substrate injection. As long as the Pin 4 voltage is lower than (--60 mV), the Current Sense comparator resets the PWM latch to force the gate drive signal low state. In that condition, the power MOSFET cannot be on. During the on--time, the Pin 4 information is used for the overcurrent limitation while it serves the zero current detection during the off time. Ipk max ≈ R (kΩ) OCP × 0.205 (A) R cs(Ω) Consequently, the ROCP resistor can program the OCP level whatever the Rcs value is. This gives a high freedom in the choice of Rcs. In particular, the inrush resistor can be utilized. http://onsemi.com 11 MC33260 Pin Numbers are Relevant to the PDIP--8 Version VCC Th--Stdwn Synchronization Arrangement 5 S OVP, UVP Current Sense Comparator -- Output Buffer Q 7 PWM Latch ZCD & OCP R + & Output_Ctrl --60 mV + Q -- PWM Latch Comparator Vcontrol (Vpin2 -- Regulation Output) Oscillator Sawtooth Figure 29. PWM Latch A LEB (Leading Edge Blanking) has been implemented. This circuitry disconnects the Current Sense comparator from Pin 4 and disables it during the 400 first ns of the power switch conduction. This prevents the block from reacting on the current spikes that generally occur at power switch turn on. Consequently, proper operation does not require any filtering capacitor on Pin 4. Practically, Vpin1 that is in the range of 2.5 V, can be neglected. The equation can then be simplified: PROTECTIONS where IovpL is the internal low OVP current threshold. Consequently, Vpin1 being neglected: V (mA) (V)  V ovpL = R o(MΩ) × I  (mA) (V) ovpL The OVP hysteresis prevents erratic behavior. IovpL is guaranteed to be higher than IregH (refer to parameters specification). This ensures that the OVP function doesn’t interfere with the regulation one. OVP (Overvoltage Protection) The feedback current (Io) is compared to a threshold current (IovpH). If it exceeds this value, the gate drive signal is maintained low until this current gets lower than a second level (IovpL). UVP (Undervoltage Protection) This function detects when the feedback current is lower than 14% of Iref. In this case, the PWM latch is reset and the power switch is kept off. This protection is useful to:  Protect the preregulator from working in too low mains conditions.  To detect the feedback current absence (in case of a nonproper connection for instance). The UVP threshold is: Gate Drive Enable Vcontrol Io IregL IregH IovpL IovpH V uvp ≈ V Figure 30. Internal Current Thresholds pin1 + R o(MΩ) × Iuvp(mA) (V) Practically (Vpin1 being neglected), So, the OVP upper threshold is:  ovpH V ovpL = V pin1 + R o × I ovpL Refer to Current Sense Block. V ovpH = V pin1 + R o × I ovpH = R o(MΩ) × I On the other hand, the OVP low threshold is: OCP (Overcurrent Protection) Iuvp ovpH V uvp = R o(MΩ) × I uvp(mA) (V)  Maximum On--Time Limitation where: Ro is the feedback resistor that is connected between Pin 1 and the output voltage, IovpH is the internal upper OVP current threshold, Vpin1 is the Pin 1 clamp voltage. As explained in PWM Latch, the maximum on--time is accurately controlled. Pin Protection All the pins are ESD protected. http://onsemi.com 12 MC33260 Pin Numbers are Relevant to the PDIP--8 Version In particular, a 11 V Zener diode is internally connected between the terminal and ground on the following pins: Sync Feedback, Vcontrol, Oscillator, Current Sense, and Synchronization. + 5 1V S1 -- Q1 Rsync UVLO Q1 High Synchronization Mode R2 2 ms & PWM Latch Set S2 Q2 1V R2 Output_Ctrl Figure 31. Synchronization Arrangement SYNCHRONIZATION BLOCK OUTPUT SECTION The MC33260 features two modes of operation:  Free Running Discontinuous Mode: The power switch is turned on as soon as there is no current left in the inductor (Zero Current Detection). This mode is simply obtained by grounding the synchronization terminal (Pin 5).  Synchronization Mode: This mode is set as soon as a signal crossing the 1.0 V threshold, is applied to the Pin 5. In this case, operation in free running can only be recovered after a new circuit startup. In this mode, the power switch cannot turn on before the two following conditions are fulfilled. -- Still, the zero current must have been detected. -- The precedent turn on must have been followed by (at least) one synchronization raising edge crossing the 1.0 V threshold. In other words, the synchronization acts to prolong the power switch off time. Consequently, a proper synchronized operation requires that the current cycle (on--time + inductor demagnetization) is shorter than the synchronization period. Practically, the inductor must be chosen accordingly. Otherwise, the system will keep working in free running discontinuous mode. Figure 36 illustrates this behavior. It must be noticed that whatever the mode is, a 2.0 ms minimum off--time is forced. This delay limits the switching frequency in light load conditions. The output stage contains a totem pole optimized to minimize the cross conduction current during high speed operation. The gate drive is kept in a sinking mode whenever the Undervoltage Lockout is active. The rise and fall times have been controlled to typically equal 50 ns while loaded by 1.0 nF. REFERENCE SECTION An internal reference current source (Iref) is trimmed to be 4% accurate over the temperature range (the typical value is 200 mA). Iref is the reference used for the regulation (IregH = Iref). UNDERVOLTAGE LOCKOUT SECTION An Undervoltage Lockout comparator has been implemented to guarantee that the integrated circuit is operating only if its supply voltage (VCC) is high enough to enable a proper working. The UVLO comparator monitors the Pin 8 voltage and when it exceeds 11 V, the device gets active. To prevent erratic operation as the threshold is crossed, 2.5 V of hysteresis is provided. The circuit off state consumption is very low: in the range of 100 mA @ VCC = 5.0 V. This consumption varies versus VCC as the circuit presents a resistive load in this mode. THERMAL SHUTDOWN An internal thermal circuitry is provided to disable the circuit gate drive and then to prevent it from oscillating, if the junction temperature exceeds 150C typically. The output stage is again enabled when the temperature drops below 120C typically (30C hysteresis). http://onsemi.com 13 MC33260 Pin Numbers are Relevant to the PDIP--8 Version FOLLOWER BOOST of the follower boost: it allows the use of smaller, lighter and cheaper inductors compared to traditional systems. Finally, this technique utilization brings a drastic system cost reduction by lowering the size and then the cost of both the inductor and the power switch. Traditional PFC preconverters provide the load with a fixed and regulated voltage that generally equals 230 V or 400 V according to the mains type (U.S., European, or universal). In the “Follower Boost” operation, the preconverter output regulation level is not fixed but varies linearly versus the ac line amplitude at a given input power. IL traditional preconverter follower boost preconverter Ipk Traditional Output Vo (Follower Boost) time Vin Vin Vac Vin Vin IL IL Vout Load the power switch is on the power switch is off Figure 33. Off--Time Duration Increase Figure 32. Follower Boost Characteristics This technique aims at reducing the gap between the output and the input voltages to minimize the boost efficiency degradation. Follower Boost Implementation In the MC33260, the on--time is differently controlled according to the feedback current level. Two areas can be defined:  When the feedback current is higher than IregL (refer to regulation section), the regulation block output (Vcontrol) is modulated to force the output voltage to a desired value.  On the other hand, when the feedback current is lower than IregL, the regulation block output and therefore, the on--time are maximum. As explained in PWM Latch Section, the on--time is then inversely proportional to the output voltage square. The Follower Boost is active in these conditions in which the on--time is simply limited by the output voltage level. Note: In this equation, the Feedback Pin voltage (Vpin1) is neglected compared to the output voltage (refer to the PWM Latch Section). Follower Boost Benefits The boost presents two phases:  The on--time during which the power switch is on. The inductor current grows up linearly according to a slope (Vin/Lp), where Vin is the instantaneous input voltage and Lp the inductor value.  The off--time during which the power switch is off. The inductor current decreases linearly according the slope (Vo -- Vin) / Lp, where Vo is the output voltage. This sequence that terminates when the current equals zero, has a duration that is inversely proportional to the gap between the output and input voltages. Consequently, the off--time duration becomes longer in follower boost. Consequently, for a given peak inductor current, the longer the off time, the smaller power switch duty cycle and then its conduction dissipation. This is the first benefit of this technique: the MOSFET on--time losses are reduced. The increase of the off time duration also results in a switching frequency diminution (for a given inductor value). Given that in practise, the boost inductor is selected big enough to limit the switching frequency down to an acceptable level, one can immediately see the second benefit t on = t on max = C pin3 × R2 o K osc × V 2 o where: Cpin3 is the total oscillator capacitor (sum of the internal and external capacitors -- Cint + CT), Kosc is the ratio (oscillator swing over oscillator gain), Vo is the output voltage, Ro is the feedback resistor. http://onsemi.com 14 MC33260 Pin Numbers are Relevant to the PDIP--8 Version On the other hand, the boost topology has its own rule that dictates the on--time necessary to deliver the required power: t on = 4 × Lp × P V2 pk (Pin)min in Pin where: Vpk is the peak ac line voltage, Lp is the inductor value, Pin is the input power. Combining the two equations, one can obtain the Follower Boost equation: Vo = Ro × 2  Vo = Vpk Regulation Block is Active Vo (Pin)max non usable area C pin3 ×V pk K osc × L p × P in Vac Consequently, a linear dependency links the output voltage to the ac line amplitude at a given input power. VacLL Vac VacHL Figure 35. Follower Boost Output Voltage Mode Selection (Vac)max Input Power Output Voltage The Regulation Block is Active Vac The operation mode is simply selected by adjusting the oscillator capacitor value. As shown in Figure 35, the output voltage first has an increasing linear characteristic versus the ac line magnitude and then is clamped down to the regulation value. In the traditional mode, the linear area must be rejected. This is achieved by dimensioning the oscillator capacitor so that the boost can deliver the maximum power while the output voltage equals its regulation level and this, whatever the given input voltage. Practically, that means that whatever the power and input voltage conditions are, the follower boost would generate output voltages values higher than the regulation level, if there was no regulation block. In other words, if (Vo)regL is the low output regulation level: Output Voltage Input Power Pin (Vac)min Vo ton = k/Vo2 ton on--time Figure 34. Follower Boost Characteristics The behavior of the output voltage is depicted in Figures 34 and 35. In particular, Figure 35 illustrates how the output voltage converges to a stable equilibrium level. First, at a given ac line voltage, the on--time is dictated by the power demand. Then, the follower boost characteristic makes correspond one output voltage level to this on--time. Combining these two laws, it appears that the power level forces the output voltage. One can notice that the system is fully stable:  If an output voltage increase makes it move away from its equilibrium value, the on--time will immediately diminish according to the follower boost law. This will result in a delivered power decrease. Consequently, the supplied power being too low, the output voltage will decrease back,  In the same way, if the output voltage decreases, more power will be transferred and then the output voltage will increase back. V o regL ≤ Ro × 2  C +C T int K osc × L p × P  in max ×V pk Consequently, C T ≥ --C int + 2 4 × K osc × L p × P in max × V o regL 2 R2 o × V pk Using IregL (regulation block current reference), this equation can be simplified as follows: C T ≥ --C int + 4 × K osc × L p × P  max × I2 in regL V2 pk In the Follower Boost case, the oscillator capacitor must be chosen so that the wished characteristics are obtained. Consequently, the simple choice of the oscillator capacitor enables the mode selection. http://onsemi.com 15 MC33260 Synchronization Signal Zero Current Detection 2 ms Delay 2 ms 2 ms 2 ms 2 ms Vcontrol Oscillator Circuit Output 205 mA Ics Inductor Current 1 2 case no. 1: the turn on is delayed by the Zero Current Detection cases no. 2 and no. 3: the turn on is delayed by the synchronization signal case no. 4: the turn on is delayed by the minimum off--time (2 ms) Figure 36. Typical Waveforms http://onsemi.com 16 3 4 MC33260 MAIN DESIGN EQUATIONS (Note 3) rms Input Current (Iac) I ac =  (preconverter efficiency) is generally in the range of 90 -- 95%. Po η × Vac Maximum Inductor Peak Current ((Ipk)max): (Ipk)max is the maximum inductor current. Output Voltage Peak to Peak 100Hz (120Hz) Ripple ((ΔVo)pk--pk): fac is the ac line frequency (50 or 60Hz). 2 × 2 × (P o) max (I ) max = pk η×V acLL Po (ΔVo ) = pk–pk 2π × f ac × C o × Vo Inductor Value (Lp): 2×t× Lp =  Vo 2 −V acLL  t is the maximum switching period. (t = 40 ms) for universal mains operation and (t = 20ms) for narrow range are generally used. 2 ×V acLL Vo × V × (I ) max acLL pk Maximum Power MOSFET Conduction Losses ((pon)max):  (Pon ) max ≈ 1 × (Rds)on × (I ) max 2 × 1 − pk 3 1.2 × V acLL Vo  (Rds)on is the MOSFET drain source on--time resistor. In Follower Boost, the ratio (VacLL/Vo) is higher. The on--time MOSFET losses are then reduced. Maximum Average Diode Current (Id): The Average Diode Current depends on the power and on the output voltage. Current Sense Resistor Losses (pRcs): This formula indicates the required dissipation capability for Rcs (current sense resistor). (P ) max (I ) max = o d (Vo) min pR cs = 1 × (Rds)on × (I ) 2 max pk 6 Over Current Protection Resistor (ROCP): R OCP ≈ R cs × (I Oscillator External Capacitor Value (CT): --Traditional Operation 2×K C ≥−C + T int -- Follower Boost: Vo = Ro × 2 Feedback Resistor (Ro): Ro = pk 0.205 ) max (kΩ) 2 osc × L p × (Pin ) max × I regL V 2ac  C +C T int K osc × L p × P in The overcurrent threshold is adjusted by ROCP at a given Rcs. Rcs can be a preconverter inrush resistor. The Follower Boost characteristic is adjusted by the CT choice. The Traditional Mode is also selected by CT. Cint is the oscillator pin internal capacitor. ×V pk (Vo ) reg − VFB V ≈ o 200 I regH (MΩ) 3. The preconverter design requires the following characteristics specification: -- (Vo)reg: desired output voltage regulation level -- (ΔVo)pk--pk: admissible output peak to peak ripple voltage -- Po: desired output power -- Vac: ac rms operating line voltage -- VacLL: minimum ac rms operating line voltage -- VFB: Feedback Pin voltage http://onsemi.com 17 The output voltage regulation level is adjusted by Ro. MC33260 L1 1N4007 D1 90 to 270 Vac EMI Filter D2 D3 C1 330 nF 500 Vdc D4 320 mH D5 MUR460E R1 1 MΩ 0.25 W Q1 MTP4N50E + 80 W Load (SMPS, Lamp Ballast,...) C2 47 mF 450 V R2 1 MΩ 0.25 W R4 R3 15 kΩ/0.25 W 1 Ω/2 W R5 22 Ω/0.25 W Feedback Input Io Vreg Vreg Vcontrol C3 680 nF Io Io Feedback Block 1.5 V Iref Vprot Regulation Block 300 k UVP, OVP Io (-- -- --) Iuvp IovpL IovpH Io 97%.Iref Iref Iref Vref Iref MC33260 REGULATOR -- Enable + 11 V/8.5 V VCC Vprot ThStdwn Output Buffer PWM Comp Oscillator I osc–ch = C4 330 pF Gnd + 2x|0x|0 I ref R -Iocp (205 mA) CT 0 1 1 0 --60 mV 15 pF Q PWM Latch Current Sense Block S Q Output + Synchro Synchronization Block -- LEB Output Drive L1: Coilcraft N2881 -- A (primary: 62 turns of # 22 AWG -- Secondary: 5 turns of # 22 AWG Core: Coilcraft PT2510, EE 25 L1: Gap: 0.072 total for a primary inductance (Lp) of 320 mH) Figure 37. 80 W Wide Mains Power Factor Corrector POWER FACTOR CONTROLLER TEST DATA* AC Line Input Current Harmonic Distortion (% Ifund) Vrms (V) Pin (W) PF (--) Ifund (mA) THD H2 H3 H5 H7 DC Output H9 Vo (V) ΔVo (V) Io (mA) Po (W)  (%) 90 88.2 0.991 990 8.1 0.07 5.9 4.3 1.5 1.7 181 31.2 440 79.6 90.2 110 86.3 0.996 782 7.0 0.05 2.7 5.7 1.1 0.8 222 26.4 360 79.9 92.6 135 85.2 0.995 642 8.2 0.03 1.5 6.8 1.1 1.5 265 20.8 300 79.5 93.3 180 87.0 0.994 480 9.5 0.16 4.0 6.5 3.1 4.0 360 16.0 225 81.0 93.1 220 84.7 0.982 385 15 0.5 8.4 7.8 5.3 1.9 379 14.0 210 79.6 94.4 240 85.3 0.975 359 16.5 0.7 9.0 7.8 7.4 3.8 384 14.0 210 80.6 94.5 260 84.0 0.967 330 18.8 0.7 11.0 7.0 9.0 4.0 392 13.2 205 80.4 95.7 *Measurements performed using Voltech PM1200 ac power analysis. http://onsemi.com 18 MC33260 Rstup D1...D4 15 V 2 3 8 MC33260 1 4 r + Cpin8 VCC + 7 6 5 PDIP--8 CONFIGURATION SHOWN Figure 38. Circuit Supply Voltage MC33260 VCC SUPPLY VOLTAGE When the PFC preconverter is loaded by an SMPS, the MC33260 should preferably be supplied by the SMPS itself. In this configuration, the SMPS starts first and the PFC gets active when the MC33260 VCC supplied by the power supply, exceeds the device startup level. With this configuration, the PFC preconverter doesn’t require any auxiliary winding and finally a simple coil can be used. In some applications, the arrangement shown in Figure 38 must be implemented to supply the circuit. A startup resistor is connected between the rectified voltage (or one--half wave) to charge the MC33260 VCC up to its startup threshold (11 V typically). The MC33260 turns on and the VCC capacitor (Cpin8) starts to be charged by the PFC transformer auxiliary winding. A resistor, r (in the range of 22 Ω) and a 15 V Zener should be added to protect the circuit from excessive voltages. PCB LAYOUT The connections of the oscillator and Vcontrol capacitors should be as short as possible. Preconverter Output 2 3 4 8 MC33260 1 7 6 + + + + VCC + + + 5 SMPS Driver DIP--8 CONFIGURATION SHOWN Figure 39. Preconverter Loaded by a Flyback SMPS: MC33260 VCC Supply http://onsemi.com 19 MC33260 ORDERING INFORMATION Package Shipping† MC33260PG PDIP--8 (Pb--Free) 50 Units / Rail MC33260DG SOIC--8 (Pb--Free) 98 Units / Rail MC33260DR2G SOIC--8 (Pb--Free) 2500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. GreenLine is a trademark of Motorola, Inc. http://onsemi.com 20 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP−8 CASE 626−05 ISSUE P DATE 22 APR 2015 SCALE 1:1 D A E H 8 5 E1 1 4 NOTE 8 b2 c B END VIEW TOP VIEW WITH LEADS CONSTRAINED NOTE 5 A2 A e/2 NOTE 3 L SEATING PLANE A1 C D1 M e 8X SIDE VIEW b 0.010 eB END VIEW M C A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY. 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). DIM A A1 A2 b b2 C D D1 E E1 e eB L M INCHES MIN MAX −−−− 0.210 0.015 −−−− 0.115 0.195 0.014 0.022 0.060 TYP 0.008 0.014 0.355 0.400 0.005 −−−− 0.300 0.325 0.240 0.280 0.100 BSC −−−− 0.430 0.115 0.150 −−−− 10 ° MILLIMETERS MIN MAX −−− 5.33 0.38 −−− 2.92 4.95 0.35 0.56 1.52 TYP 0.20 0.36 9.02 10.16 0.13 −−− 7.62 8.26 6.10 7.11 2.54 BSC −−− 10.92 2.92 3.81 −−− 10 ° NOTE 6 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. AC IN 2. DC + IN 3. DC − IN 4. AC IN 5. GROUND 6. OUTPUT 7. AUXILIARY 8. VCC XXXXXXXXX AWL YYWWG XXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42420B PDIP−8 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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