MC74AC14DG

MC74AC14, MC74ACT14 Hex Inverter Schmitt Trigger High−Performance Silicon−Gate CMOS The MC74AC14/74ACT14 contains six logic inverters which accept standard CMOS Input signals (TTL levels for MC74ACT14) and provide standard CMOS output levels. They are capable of transforming slowly changing input signals into sharply defined, jitter−free output signals. In addition, they have a greater noise margin then conventional inverters. The MC74AC14/74ACT14 has hysteresis between the positive−going and negative−going input thresholds (typically 1.0 V) which is determined internally by transistor ratios and is essentially insensitive to temperature and supply voltage variations. www.onsemi.com MARKING DIAGRAMS 14 14 SOIC−14 D SUFFIX CASE 751A xxx14G AWLYWW 1 1 14 Features • • • • • Schmitt Trigger Inputs Outputs Source/Sink 24 mA MC74ACT14 Has TTL Compatible Inputs NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant xxx 14 ALYWG G TSSOP−14 DT SUFFIX CASE 948G 1 14 1 xxx = AC or ACT A = Assembly Location WL or L = Wafer Lot Y = Year WW or W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) VCC 14 13 12 11 10 9 8 1 2 3 4 5 6 7 GND (Top View) Figure 1. Pinout: 14−Lead Packages Conductors FUNCTION TABLE Input A Output O L H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 10 1 Publication Order Number: MC74AC14/D MC74AC14, MC74ACT14 MAXIMUM RATINGS Symbol Parameter Value Unit *0.5 to )7.0 V *0.5 v VI v VCC )0.5 V *0.5 v VO v VCC )0.5 V DC Input Diode Current $20 mA IOK DC Output Diode Current $50 mA IO DC Output Sink/Source Current $50 mA ICC DC Supply Current per Output Pin $50 mA IGND DC Ground Current per Output Pin $50 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction temperature under Bias )150 °C qJA Thermal Resistance (Note 2) SOIC TSSOP 125 170 °C/W PD Power Dissipation in Still Air at 85°C SOIC TSSOP 125 170 mW MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) > 2000 > 200 > 1000 V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85°C (Note 6) $100 mA VCC DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK (Note 1) Level 1 Oxygen Index: 30% − 35% UL 94 V−0 @ 0.125 in Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IO absolute maximum rating must be observed. 2. The package thermal impedance is calculated in accordance with JESD51−7. 3. Tested to EIA/JESD22−A114−A. 4. Tested to EIA/JESD22−A115−A. 5. Tested to JESD22−C101−A. 6. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout tr, tf Parameter Supply Voltage Min Typ Max ′AC 2.0 5.0 6.0 ′ACT 4.5 5.0 5.5 0 − VCC VCC @ 3.0 V − 150 − VCC @ 4.5 V − 40 − VCC @ 5.5 V − 25 − VCC @ 4.5 V − 10 − VCC @ 5.5 V − 8.0 − DC Input Voltage, Output Voltage (Ref. to GND) Input Rise and Fall Time (Note 1) ′AC Devices except Schmitt Inputs tr, tf Input Rise and Fall Time (Note 2) ′ACT Devices except Schmitt Inputs Unit V V ns/V ns/V − − 140 °C −40 25 85 °C Output Current − High − − −24 mA Output Current − Low − − 24 mA TJ Junction Temperature (PDIP) TA Operating Ambient Temperature Range IOH IOL Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 1. Vin from 30% to 70% VCC; see individual Data Sheets for devices that differ from the typical input rise and fall times. 2. Vin from 0.8 V to 2.0 V; see individual Data Sheets for devices that differ from the typical input rise and fall times. www.onsemi.com 2 MC74AC14, MC74ACT14 DC CHARACTERISTICS Symbol Parameter 74AC 74AC VCC (V) TA = +25°C TA = −40°C to +85°C 3.0 4.5 5.5 2.99 4.49 5.49 2.9 4.4 5.4 2.9 4.4 5.4 3.0 4.5 5.5 − − − 2.56 3.86 4.86 2.46 3.76 4.76 3.0 4.5 5.5 0.002 0.001 0.001 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 5.5 − − − 0.36 0.36 0.36 0.44 0.44 0.44 5.5 − ±0.1 5.5 − 5.5 − Typ VOH VOL IIN IOLD Minimum High Level Output Voltage Maximum Low Level Output Voltage Maximum Input Leakage Current †Minimum Dynamic Output Current IOHD Unit Conditions Guaranteed Limits IOUT = −50 mA V V *VIN = VIL or VIH −12 mA IOH −24 mA −24 mA IOUT = 50 mA V V *VIN = VIL or VIH 12 mA IOL 24 mA 24 mA ±1.0 mA VI = VCC, GND − 75 mA VOLD = 1.65 V Max − −75 mA VOHD = 3.85 V Min ICC Maximum Quiescent Supply Current 5.5 − 4.0 40 VIN = VCC or GND mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All outputs loaded; thresholds on input associated with output under test. †Maximum test duration 2.0 ms, one output loaded at a time. NOTE: IIN and ICC @ 3.0 V are guaranteed to be less than or equal to the respective limit @ 5.5 V VCC. AC CHARACTERISTICS Symbol Parameter tPLH Propagation Delay tPHL Propagation Delay *Voltage Range 3.3 V is 3.3 V ±0.3 V. VCC* (V) 74AC 74AC TA = +25°C CL = 50 pF TA = −40°C to +85°C CL = 50 pF Unit Figure No. Min Typ Max Min Max 1.5 1.5 9.5 7.0 13.5 10.0 1.5 1.5 15.0 11.0 ns 3−5 3.3 1.5 5.0 1.5 Voltage Range 5.0 V is 5.0 V ±0.5 V. 7.5 6.0 11.5 8.5 1.5 1.5 13.0 9.5 ns 3−5 3.3 5.0 www.onsemi.com 3 MC74AC14, MC74ACT14 INPUT CHARACTERISTICS (unless otherwise specified) Parameter Symbol VCC (V) 74AC 74ACT Test Conditions Vt + Maximum Positive Threshold 3.0 4.5 5.5 2.2 3.2 3.9 − 2.0 2.0 V TA = Worst Case Vt − Minimum Negative Threshold 3.0 4.5 5.5 0.5 0.9 1.1 − 0.8 0.8 V TA = Worst Case Vh(max) Maximum Hysteresis 3.0 4.5 5.5 1.2 1.4 1.6 − 1.2 1.2 V TA = Worst Case Vh(min) Minimum Hysteresis 3.0 4.5 5.5 0.3 0.4 0.5 − 0.4 0.4 V TA = Worst Case DC CHARACTERISTICS 74ACT Symbol Parameter VCC (V) 74ACT TA = +25°C Typ VOH VOL IIN DICCT IOLD Minimum High Level Output Voltage TA = −40°C to +85°C Unit Conditions Guaranteed Limits IOUT = −50 mA 4.5 5.5 4.49 5.49 4.4 5.4 4.4 5.4 4.5 5.5 − − 3.86 4.86 3.76 4.76 4.5 5.5 0.001 0.001 0.1 0.1 0.1 0.1 4.5 5.5 − − 0.36 0.36 0.44 0.44 V *VIN = VIL or VIH 24 mA IOL 24 mA 5.5 − ±0.1 ±1.0 mA VI = VCC, GND Additional Max. ICC/Input 5.5 0.6 − 1.5 mA VI = VCC − 2.1 V †Minimum Dynamic Output Current 5.5 − − 75 mA VOLD = 1.65 V Max 5.5 − − −75 mA VOHD = 3.85 V Min Maximum Low Level Output Voltage Maximum Input Leakage Current IOHD V *VIN = VIL or VIH IOH −24 mA −24 mA V IOUT = 50 mA V ICC Maximum Quiescent Supply Current 5.5 − 4.0 40 VIN = VCC or GND mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All outputs loaded; thresholds on input associated with output under test. †Maximum test duration 2.0 ms, one output loaded at a time. AC CHARACTERISTICS Symbol Parameter VCC* (V) 74ACT 74ACT TA = +25°C CL = 50 pF TA = −40°C to +85°C CL = 50 pF Unit Figure No. Min Typ Max Min Max tPLH Propagation Delay 5.0 1.5 − 11.5 1.0 12.5 ns 3−5 tPHL Propagation Delay 5.0 1.5 − 10.0 1.0 11.0 ns 3−5 *Voltage Range 5.0 V is 5.0 V ±0.5 V. CAPACITANCE Symbol Value Typ Unit Test Conditions CIN Input Capacitance Parameter 4.5 pF VCC = 5.0 V CPD Power Dissipation Capacitance 25 pF VCC = 5.0 V www.onsemi.com 4 MC74AC14, MC74ACT14 ORDERING INFORMATION Device Package MC74AC14DG MC74AC14DR2G 55 Units / Rail SOIC−14 (Pb−Free) NLV74AC14DR2G* TSSOP−14 (Pb−Free) MC74ACT14DG SOIC−14 (Pb−Free) MC74ACT14DTR2G 2500 / Tape & Reel 2500 / Tape & Reel MC74AC14DTR2G MC74ACT14DR2G Shipping† TSSOP−14 (Pb−Free) 2500 / Tape & Reel 55 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−14 WB CASE 948G ISSUE C 14 DATE 17 FEB 2016 1 SCALE 2:1 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− K1 J J1 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE H G D DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ GENERIC MARKING DIAGRAM* 14 SOLDERING FOOTPRINT XXXX XXXX ALYWG G 7.06 1 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: 98ASH70246A DESCRIPTION: TSSOP−14 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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