MC74ACT11N

MC74AC11, MC74ACT11 Triple 3-Input AND Gate High−Performance Silicon−Gate CMOS Features • Outputs Source/Sink 24 mA • ′ACT11 Has TTL Compatible Inputs • These are Pb−Free Devices www.onsemi.com MARKING DIAGRAM 14 VCC 14 13 12 11 10 9 SOIC−14 D SUFFIX CASE 751A 8 14 xxx11G AWLYWW 1 1 1 2 3 4 5 6 xxx A WL Y WW G 7 GND Figure 1. Pinout: 14−Lead Packages Conductors (Top View) = AC or ACT = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 8 1 Publication Order Number: MC74AC11/D MC74AC11, MC74ACT11 MAXIMUM RATINGS Symbol Parameter Value Unit *0.5 to )7.0 V *0.5 v VI v VCC )0.5 V *0.5 v VO v VCC )0.5 V DC Input Diode Current $20 mA IOK DC Output Diode Current $50 mA IO DC Output Sink/Source Current $50 mA ICC DC Supply Current per Output Pin $50 mA IGND DC Ground Current per Output Pin $50 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction temperature under Bias )150 °C qJA Thermal Resistance (Note 2) 125 °C/W PD Power Dissipation in Still Air at 85°C 125 mW MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) > 2000 > 200 > 1000 V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85°C (Note 6) $100 mA VCC DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK (Note 1) Level 1 Oxygen Index: 30% − 35% UL 94 V−0 @ 0.125 in Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IO absolute maximum rating must be observed. 2. The package thermal impedance is calculated in accordance with JESD51−7. 3. Tested to EIA/JESD22−A114−A. 4. Tested to EIA/JESD22−A115−A. 5. Tested to JESD22−C101−A. 6. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC Supply Voltage Vin, Vout DC Input Voltage, Output Voltage (Ref. to GND) tr, tf Input Rise and Fall Time (Note 1) ′AC Devices except Schmitt Inputs Min Typ Max Unit ′AC 2.0 5.0 6.0 ′ACT 4.5 5.0 5.5 0 − VCC VCC @ 3.0 V − 150 − VCC @ 4.5 V − 40 − VCC @ 5.5 V − 25 − VCC @ 4.5 V − 10 − VCC @ 5.5 V − 8.0 − − − 140 °C −40 25 85 °C V V ns/V tr, tf Input Rise and Fall Time (Note 2) ′ACT Devices except Schmitt Inputs TJ Junction Temperature (PDIP) TA Operating Ambient Temperature Range IOH Output Current − High − − −24 mA IOL Output Current − Low − − 24 mA ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 1. Vin from 30% to 70% VCC; see individual Data Sheets for devices that differ from the typical input rise and fall times. 2. Vin from 0.8 V to 2.0 V; see individual Data Sheets for devices that differ from the typical input rise and fall times. www.onsemi.com 2 MC74AC11, MC74ACT11 DC CHARACTERISTICS Symbol Parameter VCC (V) 74AC 74AC TA = +25°C TA = −40°C to +85°C Typ VIH VIL VOH VOL Guaranteed Limits 3.0 4.5 5.5 1.5 2.25 2.75 2.1 3.15 3.85 2.1 3.15 3.85 V VOUT = 0.1 V or VCC − 0.1 V Maximum Low Level Input Voltage 3.0 4.5 5.5 1.5 2.25 2.75 0.9 1.35 1.65 0.9 1.35 1.65 V VOUT = 0.1 V or VCC − 0.1 V Minimum High Level Output Voltage 3.0 4.5 5.5 2.99 4.49 5.49 2.9 4.4 5.4 2.9 4.4 5.4 V 3.0 4.5 5.5 − − − 2.56 3.86 4.86 2.46 3.76 4.76 3.0 4.5 5.5 0.002 0.001 0.001 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 5.5 − − − 0.36 0.36 0.36 0.44 0.44 0.44 5.5 − ±0.1 5.5 − 5.5 5.5 Maximum Low Level Output Voltage Maximum Input Leakage Current IOLD †Minimum Dynamic Output Current ICC Conditions Minimum High Level Input Voltage IIN IOHD Unit Maximum Quiescent Supply Current IOUT = −50 mA *VIN = VIL or VIH −12 mA IOH −24 mA −24 mA V IOUT = 50 mA V V *VIN = VIL or VIH 12 mA IOL 24 mA 24 mA ±1.0 mA VI = VCC, GND − 75 mA VOLD = 1.65 V Max − − −75 mA VOHD = 3.85 V Min − 4.0 40 mA VIN = VCC or GND Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All outputs loaded; thresholds on input associated with output under test. †Maximum test duration 2.0 ms, one output loaded at a time. NOTE: IIN and ICC @ 3.0 V are guaranteed to be less than or equal to the respective limit @ 5.5 V VCC. AC CHARACTERISTICS Symbol VCC* (V) Parameter 74AC 74AC TA = +25°C CL = 50 pF TA = −40°C to +85°C CL = 50 pF Min Typ Max Min Max Unit Fig. No. tPLH Propagation Delay 3.3 5.0 1.5 1.5 5.5 4.0 9.5 8.0 1.0 1.0 10.0 8.5 ns 3−5 tPHL Propagation Delay 3.3 5.0 1.5 1.5 5.5 4.0 8.5 7.0 1.0 1.0 9.5 7.5 ns 3−5 *Voltage Range 3.3 V is 3.3 V ±0.3 V. Voltage Range 5.0 V is 5.0 V ±0.5 V. www.onsemi.com 3 MC74AC11, MC74ACT11 DC CHARACTERISTICS Symbol Parameter VCC (V) 74ACT 74ACT TA = +25°C TA = −40°C to +85°C Typ Guaranteed Limits Unit Conditions VIH Minimum High Level Input Voltage 4.5 5.5 1.5 1.5 2.0 2.0 2.0 2.0 V VOUT = 0.1 V or VCC − 0.1 V VIL Maximum Low Level Input Voltage 4.5 5.5 1.5 1.5 0.8 0.8 0.8 0.8 V VOUT = 0.1 V or VCC − 0.1 V VOH Minimum High Level Output Voltage 4.5 5.5 4.49 5.49 4.4 5.4 4.4 5.4 V 4.5 5.5 − − 3.86 4.86 3.76 4.76 4.5 5.5 0.001 0.001 0.1 0.1 0.1 0.1 4.5 5.5 − − 0.36 0.36 0.44 0.44 V *VIN = VIL or VIH 24 mA IOL 24 mA VOL Maximum Low Level Output Voltage IOUT = −50 mA *VIN = VIL or VIH −24 mA IOH −24 mA V IOUT = 50 mA V IIN Maximum Input Leakage Current 5.5 − ±0.1 ±1.0 mA VI = VCC, GND DICCT Additional Max. ICC/Input 5.5 0.6 − 1.5 mA VI = VCC − 2.1 V IOLD †Minimum Dynamic Output Current 5.5 − − 75 mA VOLD = 1.65 V Max 5.5 − − −75 mA VOHD = 3.85 V Min 5.5 − 4.0 40 mA VIN = VCC or GND IOHD ICC Maximum Quiescent Supply Current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All outputs loaded; thresholds on input associated with output under test. †Maximum test duration 2.0 ms, one output loaded at a time. AC CHARACTERISTICS Symbol VCC* (V) Parameter 74ACT 74ACT TA = +25°C CL = 50 pF TA = −40°C to +85°C CL = 50 pF Unit Fig. No. Min Typ Max Min Max tPLH Propagation Delay 5.0 1.5 − 9.5 1.0 10.5 ns 3−5 tPHL Propagation Delay 5.0 1.5 − 9.5 1.0 10.5 ns 3−5 *Voltage Range 5.0 V is 5.0 V ±0.5 V. CAPACITANCE Symbol Parameter Value Typ Unit Test Conditions CIN Input Capacitance 4.5 pF VCC = 5.0 V CPD Power Dissipation Capacitance 20 pF VCC = 5.0 V ORDERING INFORMATION www.onsemi.com 4 MC74AC11, MC74ACT11 Package Shipping† MC74AC11DG SOIC−14 (Pb−Free) 55 Units/Rail MC74AC11DR2G SOIC−14 (Pb−Free) 2500/Tape & Reel MC74ACT11DR2G SOIC−14 (Pb−Free) 2500/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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