MC74HC126ADTEL

MC74HC125A, MC74HC126A Quad 3-State Noninverting Buffers High–Performance Silicon–Gate CMOS http://onsemi.com The MC74HC125A and MC74HC126A are identical in pinout to the LS125 and LS126. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The HC125A and HC126A noninverting buffers are designed to be used with 3–state memory address drivers, clock drivers, and other bus–oriented systems. The devices have four separate output enables that are active–low (HC125A) or active–high (HC126A). • • • • • • • MARKING DIAGRAMS 14 PDIP–14 N SUFFIX CASE 646 1 14 Output Drive Capability: 15 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 µA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 72 FETs or 18 Equivalent Gates LOGIC DIAGRAM HC125A HC126A Active–Low Output Enables Active–High Output Enables A1 OE1 A2 OE2 A3 OE3 A4 OE4 2 3 1 2 A1 Y1 6 4 9 8 Y3 10 9 A3 11 13 8 12 A4 Y4 11 PIN 14 = VCC PIN 7 = GND Output Inputs Output OE Y A OE Y H L X L L H H L Z H L X H H L H L Z March, 2000 – Rev. 9 HC 12xA ALYW TSSOP–14 DT SUFFIX CASE 948G 1 A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week Y3 OE1 1 14 VCC A1 2 13 OE4 Y1 3 12 A4 OE2 4 11 Y4 A2 5 10 OE3 Y2 6 9 A3 GND 7 8 Y3 Y4 Device HC126A A  Semiconductor Components Industries, LLC, 2000 14 ORDERING INFORMATION FUNCTION TABLE Inputs 1 13 OE4 HC125A Y2 10 OE3 12 6 4 OE2 HC12xA AWLYWW PIN ASSIGNMENT 5 A2 Y2 Y1 SOIC–14 D SUFFIX CASE 751A 1 OE1 5 3 MC74HC12xAN AWLYYWW Package Shipping MC74HC12xAN PDIP–14 2000 / Box MC74HC12xAD SOIC–14 55 / Rail MC74HC12xADR2 1 SOIC–14 2500 / Reel MC74HC12xADT TSSOP–14 96 / Rail MC74HC12xADTR2 TSSOP–14 2500 / Reel Publication Order Number: MC74HC125A/D MC74HC125A, MC74HC126A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol VCC Parameter DC Supply Voltage (Referenced to GND) Value Unit – 0.5 to + 7.0 V V Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 Vout DC Output Voltage (Referenced to GND) Iin – 0.5 to VCC + 0.5 V DC Input Current, per Pin ± 20 mA Iout DC Output Current, per Pin ± 35 mA ICC DC Supply Current, VCC and GND Pins ± 75 mA PD Power Dissipation in Still Air 750 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Plastic DIP† SOIC Package† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. v v _C Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, SOIC or TSSOP Package) 260 *Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. †Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ v v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v v ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout TA tr, tf Parameter Min Max Unit 2.0 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C 85_C 125_C Unit VIH Minimum High–Level Input Voltage Vout = VCC – 0.1 V |Iout| 20 µA 2.0 3.0 4.5 6.0 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 V VIL Maximum Low–Level Input Voltage Vout = 0.1 V |Iout| 20 µA 2.0 3.0 4.5 6.0 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 V Minimum High–Level Output Voltage Vin = VIH |Iout| 20 µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.2 3.7 5.2 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.4 0.4 0.4 VOH Vin = VIH VOL Maximum Low–Level Output Voltage |Iout| |Iout| |Iout| 3.6 mA 6.0 mA 7.8 mA Vin = VIL |Iout| 20 µA Vin = VIL |Iout| |Iout| |Iout| 3.6 mA 6.0 mA 7.8 mA http://onsemi.com 2 V MC74HC125A, MC74HC126A ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ v v ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ v v ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V – 55 to 25_C 85_C 125_C Unit Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA IOZ Maximum Three–State Leakage Current Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND 6.0 ± 0.5 ± 5.0 ± 10 µA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 µA 6.0 4.0 40 160 µA Iin NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter VCC V – 55 to 25_C 85_C 125_C Unit tPLH, tPHL Maximum Propagation Delay, Input A to Output Y (Figures 1 and 3) 2.0 3.0 4.5 6.0 90 36 18 15 115 45 23 20 135 60 27 23 ns tPLZ, tPHZ Maximum Propagation Delay, Output Enable to Y (Figures 2 and 4) 2.0 3.0 4.5 6.0 120 45 24 20 150 60 30 26 180 80 36 31 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to Y (Figures 2 and 4) 2.0 3.0 4.5 6.0 90 36 18 15 115 45 23 20 135 60 27 23 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 3) 2.0 3.0 4.5 6.0 60 22 12 10 75 28 15 13 90 34 18 15 ns Maximum Input Capacitance — 10 10 10 pF Maximum Three–State Output Capacitance (Output in High–Impedance State) — 15 15 15 pF Cin Cout NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Buffer)* 30 pF * Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). http://onsemi.com 3 MC74HC125A, MC74HC126A SWITCHING WAVEFORMS OE (HC125A) tr OUTPUT Y GND VCC 90% 50% 10% INPUT A VCC OE (HC126A) GND 50% GND tPHL tPLH VCC 50% tf tPZL tPLZ 90% 50% 10% OUTPUT Y tTHL tTLH HIGH IMPEDANCE 50% 10% VOL 90% VOH HIGH IMPEDANCE tPZH tPHZ 50% OUTPUT Y Figure 1. Figure 2. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST CL* *Includes all probe and jig capacitance OUTPUT 1 kΩ CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ and tPZH. *Includes all probe and jig capacitance Figure 3. Test Circuit Figure 4. Test Circuit VCC OE A Y HC125A (1/4 OF THE DEVICE) VCC OE A Y HC126A (1/4 OF THE DEVICE) http://onsemi.com 4 MC74HC125A, MC74HC126A PACKAGE DIMENSIONS PDIP–14 N SUFFIX CASE 646–06 ISSUE L 14 8 1 7 NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. B A F DIM A B C D F G H J K L M N L C J N H G D SEATING PLANE K M INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01 SOIC–14 D SUFFIX CASE 751A–03 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 14 8 –B– 1 P 7 PL 0.25 (0.010) 7 G B M M R X 45 _ C F –T– SEATING PLANE D 14 PL 0.25 (0.010) M K M T B S A S http://onsemi.com 5 J DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 MC74HC125A, MC74HC126A PACKAGE DIMENSIONS TSSOP–14 DT SUFFIX CASE 948G–01 ISSUE O 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. S S N 2X 14 L/2 0.25 (0.010) 8 M B –U– L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K ÉÉ ÇÇ ÇÇ ÉÉ A –V– K1 J J1 SECTION N–N –W– C 0.10 (0.004) –T– SEATING PLANE D G H DETAIL E http://onsemi.com 6 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74HC125A, MC74HC126A Notes http://onsemi.com 7 MC74HC125A, MC74HC126A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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