MC74HC1G04DTT1

MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to MC74HC series. • • • • • • • http://onsemi.com High Speed: tPD = 7 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25_C MARKING DIAGRAMS High Noise Immunity Balanced Propagation Delays (tpLH = tpHL) 5 Symmetrical Output Impedance (IOH = IOL = 2 mA) 1 Chip Complexity: FET = 105 These Devices are Pb−Free and are RoHS Compliant 5 1 NC H5 MG G SC70−5/SC−88A/SOT−353 DF SUFFIX CASE 419A 5 VCC 1 IN A 2 GND 3 H5 MG G SOT23−5/TSOP−5/SC59−5 DT SUFFIX CASE 483 OUT Y 4 H5 M G Figure 1. Pinout (Top View) = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT IN A 1 1 OUT Y Figure 2. Logic Symbol NC 2 IN A 3 GND 4 OUT Y 5 VCC FUNCTION TABLE Input A Output Y L H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2011 February, 2011 − Rev. 9 1 Publication Order Number: MC74HC1G04/D MC74HC1G04 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage *0.5 to )7.0 V VIN DC Input Voltage *0.5 to VCC )0.5 V VOUT DC Output Voltage *0.5 to VCC )0.5 V IIK DC Input Diode Current $20 mA IOK DC Output Diode Current $20 mA IOUT DC Output Sink Current $12.5 mA ICC DC Supply Current per Supply Pin $25 mA TSTG Storage Temperature Range *65 to )150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 _C TJ Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85_C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage ILATCHUP Latchup Performance )150 _C SC70−5/SC−88A (Note 1) TSOP−5 350 230 _C/W SC70−5/SC−88A TSOP−5 150 200 mW Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) u2000 u200 N/A V Above VCC and Below GND at 125_C (Note 5) $500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Min Max Unit VCC DC Supply Voltage Parameter 2.0 6.0 V VIN DC Input Voltage 0.0 VCC V VOUT DC Output Voltage TA Operating Temperature Range tr , tf Input Rise and Fall Time 0.0 VCC V *55 )125 _C 0 0 0 0 1000 600 500 400 ns VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80_C 1,032,200 TJ = 90_C 80 TJ = 100_C Time, Years TJ = 110_C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 120_C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 130_C Symbol 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74HC1G04 DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions (V) Min 1.5 2.1 3.15 4.20 VIH Minimum High−Level Input Voltage 2.0 3.0 4.5 6.0 VIL Maximum Low−Level Input Voltage 2.0 3.0 4.5 6.0 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = −20 mA VIN = VIH or VIL IOH = −2 mA IOH = −2.6 mA VOL Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 20 mA TA = 25_C Typ TA v 85_C Max Min *55_C v TA v 125_C Max Min 1.5 2.1 3.15 4.20 0.5 0.9 1.35 1.80 Max 1.5 2.1 3.15 4.20 0.5 0.9 1.35 1.80 V 0.5 0.9 1.35 1.80 2.0 3.0 4.5 6.0 1.9 2.9 4.4 5.9 2.0 3.0 4.5 6.0 1.9 2.9 4.4 5.9 1.9 2.9 4.4 5.9 4.5 6.0 4.18 5.68 4.31 5.80 4.13 5.63 4.08 5.58 Unit V V 2.0 3.0 4.5 6.0 0.0 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VIN = VIH or VIL IOL = 2 mA IOL = 2.6 mA 4.5 6.0 0.17 0.18 0.26 0.26 0.33 0.33 0.40 0.40 V IIN Maximum Input Leakage Current VIN = 6.0 V or GND 6.0 $0.1 $1.0 $1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 6.0 1.0 10 40 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns) TA = 25_C TA v 85_C *55_C v TA v 125_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol Parameter tPLH, tPHL Maximum Propagation Delay, Input A or B to Y tTLH, tTHL Output Transition Time CIN Maximum Input Capacitance Test Conditions Min Typ Max Min Max Min Max Unit ns VCC = 5.0 V CL = 15 pF 3.5 15 20 25 VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V CL = 50 pF 18 10 7 6 100 27 20 17 125 35 25 21 155 90 35 26 VCC = 5.0 V CL = 15 pF 3 10 15 20 VCC = 2.0 V VCC = 3.0 V VCC = 4.5 V VCC = 6.0 V CL = 50 pF 25 16 11 9 125 35 25 21 155 45 31 26 200 60 38 32 5 10 10 10 ns pF Typical @ 25_C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 6) 10 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. http://onsemi.com 3 MC74HC1G04 tr tf 90% 50% 10% INPUT A CL* GND tPLH tPHL OUTPUT Y OUTPUT INPUT VCC 90% 50% 10% tTHL *Includes all probe and jig capacitance. A 1−MHz square input wave is recommended for propagation delay tests. tTLH Figure 4. Switching Waveforms Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Logic Circuit Indicator Temp Range Identifier Technology Device Function Package Suffix Tape and Reel Suffix MC74HC1G04DFT1G MC 74 HC1G 08 DF MC74HC1G04DFT2G MC 74 HC1G 08 MC74HC1G04DTT1G MC 74 HC1G 08 Package Type Tape and Reel Size† T1 SC70−5/SC−88A/ SOT−353 (Pb−Free) 178 mm (7 in) 3000 Unit DF T2 SC70−5/SC−88A/ SOT−353 (Pb−Free) 178 mm (7 in) 3000 Unit DT T1 SOT23−5/TSOP−5/ SC59−5 (Pb−Free) 178 mm (7 in) 3000 Unit †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74HC1G04 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74HC1G04 PACKAGE DIMENSIONS SOT23−5/TSOP−5/SC59−5 DT SUFFIX CASE 483−02 ISSUE H D NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 5X 0.20 C A B M 5 1 4 2 L 3 B S K DETAIL Z G A J C 0.05 SEATING PLANE H MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 DIM A B C D G H J K L M S DETAIL Z T SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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