MC74HC86A
Quad 2−Input Exclusive
OR Gate
High−Performance Silicon−Gate CMOS
The MC74HC86A is identical in pinout to the LS86. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
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MARKING
DIAGRAMS
Features
•
•
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1 A
High Noise Immunity Characteristic of CMOS Devices
In Compliance with JEDEC Standard No. 7A Requirements
Chip Complexity: 56 FETs or 14 Equivalent Gates
Pb−Free Packages are Available*
14
PDIP−14
N SUFFIX
CASE 646
14
1
MC74HC86AN
AWLYYWWG
1
14
SOIC−14
D SUFFIX
CASE 751A
14
1
HC86AG
AWLYWW
1
14
14
1
TSSOP−14
DT SUFFIX
CASE 948G
1
HC
86A
ALYW
14
14
1
SOEIAJ−14
F SUFFIX
CASE 965
74HC86A
ALYWG
1
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
W, WW = Work Week
G
= Pb−Free Package
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 3
1
Publication Order Number:
MC74HC86A/D
MC74HC86A
PIN ASSIGNMENT
LOGIC DIAGRAM
A1
1
14
VCC
A1
B1
2
13
B4
B1
Y1
3
12
A4
A2
4
11
Y4
B2
5
10
B3
Y2
6
9
A3
GND
7
8
Y3
1
2
4
A2
5
B2
9
A3
10
B3
12
A4
FUNCTION TABLE
Inputs
Y= A⊕B
Output
A
B
Y
L
L
H
H
L
H
L
H
L
H
H
L
13
B4
= AB + AB
3
6
8
11
Y1
Y2
Y3
Y4
PIN 14 = VCC
PIN 7 = GND
ORDERING INFORMATION
Package
Shipping†
MC74HC86AN
PDIP−14
500 Units / Rail
MC74HC86ANG
PDIP−14
(Pb−Free)
500 Units / Rail
MC74HC86AD
SOIC−14
55 Units / Rail
MC74HC86ADG
SOIC−14
(Pb−Free)
55 Units / Rail
MC74HC86ADR2
SOIC−14
2500 Units / Reel
MC74HC86ADR2G
SOIC−14
(Pb−Free)
2500 Units / Reel
MC74HC86ADTR2
TSSOP−14*
2500 Units / Reel
MC74HC86ADTR2G
TSSOP−14*
2500 Units / Reel
MC74HC86AF
SOEIAJ−14
50 Units / Rail
MC74HC86AFG
SOEIAJ−14
(Pb−Free)
50 Units / Rail
MC74HC86AFEL
SOEIAJ−14
2000 Units / Reel
MC74HC86AFELG
SOEIAJ−14
(Pb−Free)
2000 Units / Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
MC74HC86A
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MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
Vout
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
Plastic DIP†
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
C
260
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/C from 65 to 125C
SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage (Referenced to
GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
VCC
V
– 55 to
25C
85C
125C
Unit
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 A
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| 20 A
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| 20 A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
Symbol
Parameter
Test Conditions
Vin = VIH or VIL
VOL
Maximum Low−Level Output
Voltage
|Iout| 2.4 mA
|Iout| 4.0 mA
|Iout| 5.2 mA
Vin = VIH or VIL
|Iout| 20 A
Vin = VIH or VIL
|Iout| 2.4 mA
|Iout| 4.0 mA
|Iout| 5.2 mA
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3
V
MC74HC86A
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Iin
Maximum Input Leakage Current
ICC
Maximum Quiescent Supply
Current (per Package)
VCC
V
– 55 to
25C
85C
125C
Unit
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
A
Vin = VCC or GND
Iout = 0 A
6.0
1.0
10
40
A
Test Conditions
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t, = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
– 55 to
25C
85C
125C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
100
80
20
17
125
90
25
21
150
110
31
26
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
Maximum Input Capacitance
—
10
10
10
pF
Cin
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
33
Power Dissipation Capacitance (Per Gate)*
* Used to determine the no−load dynamic power consumption: P D = CPD VCC
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
tr
2f
+ ICC VCC . For load considerations, see Chapter 2 of the
tf
VCC
90%
50%
INPUT
A OR B
10%
TEST POINT
GND
tPLH
OUTPUT
tPHL
DEVICE
UNDER
TEST
90%
OUTPUT Y
pF
50%
10%
tTLH
tTHL
Figure 1. Switching Waveforms
*Includes all probe and jig capacitance
Figure 2. Test Circuit
A
Y
B
Figure 3. Expanded Logic Diagram
(1/4 of Device)
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4
CL*
MC74HC86A
PACKAGE DIMENSIONS
PDIP−14
N SUFFIX
CASE 646−06
ISSUE N
14
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
8
B
1
7
A
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
L
N
C
−T−
SEATING
PLANE
J
K
H
D 14 PL
G
M
0.13 (0.005)
M
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
18.80
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10
0.38
1.01
SOIC−14
D SUFFIX
CASE 751A−03
ISSUE G
−A−
14
8
−B−
P 7 PL
0.25 (0.010)
M
B
M
7
1
G
F
R X 45
C
−T−
SEATING
PLANE
D 14 PL
0.25 (0.010)
M
T B
J
M
K
S
A
S
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5
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
7
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0
7
0.228 0.244
0.010 0.019
MC74HC86A
PACKAGE DIMENSIONS
TSSOP−14
DT SUFFIX
CASE 948G−01
ISSUE A
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
K
A
−V−
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÇÇÇ
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
G
H
DETAIL E
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6
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0
8
0
8
MC74HC86A
PACKAGE DIMENSIONS
SOEIAJ−14
F SUFFIX
CASE 965−01
ISSUE O
14
LE
8
Q1
E HE
L
7
1
M
DETAIL P
Z
D
VIEW P
A
e
c
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
A1
b
0.13 (0.005)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
0.10 (0.004)
http://onsemi.com
7
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10
0
0.70
0.90
−−−
1.42
INCHES
MIN
MAX
−−−
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10
0
0.028
0.035
−−−
0.056
MC74HC86A
ON Semiconductor and
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