MC74LCX08DTG

MC74LCX08 Low-Voltage CMOS Quad 2-Input AND Gate With 5 V−Tolerant Inputs The MC74LCX08 is a high performance, quad 2−input AND gate operating from a 2.3 to 3.6 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A VI specification of 5.5 V allows MC74LCX08 inputs to be safely driven from 5.0 V devices. Current drive capability is 24 mA at the outputs. http://onsemi.com MARKING DIAGRAMS 14 SOIC−14 D SUFFIX CASE 751A 14 Features • • • • • • 1 • 1 Designed for 2.3 V to 3.6 V VCC Operation 5.0 V Tolerant Inputs − Interface Capability With 5.0 V TTL Logic LVTTL Compatible 14 LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current (10 mA) Substantially Reduces System Power Requirements Latchup Performance Exceeds 500 mA Human Body Model >2000 V Machine Model >200 V NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 10 TSSOP−14 DT SUFFIX CASE 948G 14 • • ESD Performance: • LCX08G AWLYWW 1 1 1 LCX 08 ALYWG G A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MC74LCX08/D MC74LCX08 VCC 14 A2 13 B2 12 O2 11 A3 B3 10 O3 9 1 A0 3 2 B0 8 4 A1 6 5 B1 11 12 B2 2 3 4 5 6 7 A0 B0 O0 A1 B1 O1 GND O1 13 A2 1 O0 O2 10 A3 8 9 B3 Figure 1. Pinout: 14−Lead (Top View) O3 Figure 2. Logic Diagram PIN NAMES TRUTH TABLE Pins Function An, Bn Data Inputs On Outputs Inputs Outputs An Bn On L L L L H L H L L H H H H = High Voltage Level L = Low Voltage Level For ICC reasons, DO NOT FLOAT Inputs MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK Value Condition Unit −0.5 to +7.0 V −0.5 ≤ VI ≤ +7.0 V −0.5 ≤ VO ≤ VCC + 0.5 Output in HIGH or LOW State (Note 1) V DC Input Diode Current −50 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C MSL Moisture Sensitivity Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IO absolute maximum rating must be observed. http://onsemi.com 2 MC74LCX08 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Type Max Unit 2.0 1.5 2.5, 3.3 2.5, 3.3 3.6 3.6 V 0 5.5 V 0 VCC V VCC = 3.0 V − 3.6 V VCC = 2.7 V − 3.0 V VCC = 2.3 V − 2.7 V −24 −12 −8 mA VCC = 3.0 V − 3.6 V VCC = 2.7 V − 3.0 V VCC = 2.3 V − 2.7 V +24 +12 +8 mA −40 +85 °C 0 10 ns/V VCC Supply Voltage Operating Data Retention Only VI Input Voltage VO Output Voltage (HIGH or LOW State) (3−State) IOH HIGH Level Output Current IOL LOW Level Output Current TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS TA = −40°C to +85°C Symbol Characteristic VIH HIGH Level Input Voltage (Note 2) VIL LOW Level Input Voltage (Note 2) VOH VOL HIGH Level Output Voltage LOW Level Output Voltage Condition Min 2.3 V ≤ VCC ≤ 2.7 V 1.7 2.7 V ≤ VCC ≤ 3.6 V 2.0 Max V 2.3 V ≤ VCC ≤ 2.7 V 0.7 2.7 V ≤ VCC ≤ 3.6 V 0.8 2.3 V ≤ VCC ≤ 3.6 V; IOH = −100 mA VCC − 0.2 VCC = 2.3 V; IOH = −8 mA 1.8 VCC = 2.7 V; IOH = −12 mA 2.2 VCC = 3.0 V; IOH = −18 mA 2.4 VCC = 3.0 V; IOH = −24 mA 2.2 Unit V V 2.3 V ≤ VCC ≤ 3.6 V; IOL = 100 mA 0.2 VCC = 2.3 V; IOL = 8 mA 0.6 VCC = 2.7 V; IOL = 12 mA 0.4 VCC = 3.0 V; IOL = 16 mA 0.4 V VCC = 3.0 V; IOL = 24 mA 0.55 VCC = 0, VIN = 5.5 V or VOUT = 5.5 V 10 mA Input Leakage Current VCC = 3.6 V, VIN = 5.5 V or GND ±5 mA ICC Quiescent Supply Current VCC = 3.6 V, VIN = 5.5 V or GND 10 mA DICC Increase in ICC per Input 2.3 ≤ VCC ≤ 3.6 V; VIH = VCC − 0.6 V 500 mA IOFF Power Off Leakage Current IIN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. These values of VI are used to test DC electrical characteristics only. http://onsemi.com 3 MC74LCX08 AC CHARACTERISTICS (tR = tF = 2.5 ns; RL = 500 W) Limits TA = −40°C to +85°C Symbol VCC = 3.3 V ± 0.3 V VCC = 2.7 V VCC = 2.5 V ± 0.2 V CL = 50 pF CL = 50 pF CL = 30 pF Parameter Waveform Min Max Min Max Min Max Unit tPLH Propagation Delay Time 1 1.5 5.5 1.5 6.2 1.5 6.6 ns tPHL Input to Output 1.5 5.5 1.5 6.2 1.5 6.6 tOSHL Output−to−Output Skew 1.0 tOSLH (Note 3) 1.0 ns 3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol VOLP VOLV Characteristic Condition Min Typ Max Unit Dynamic LOW Peak Voltage VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V 0.8 V (Note 4) VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.6 V Dynamic LOW Valley Voltage VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V −0.8 V (Note 4) VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.6 V 4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Condition Typical Unit CIN Input Capacitance Parameter VCC = 3.3 V, VI = 0 V or VCC 7 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 8 pF CPD Power Dissipation Capacitance 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 25 pF ORDERING INFORMATION Package Shipping† MC74LCX08DG SOIC−14 (Pb−Free) 55 Units / Rail MC74LCX08DR2G SOIC−14 (Pb−Free) 2500 Tape & Reel MC74LCX08DTG TSSOP−14 (Pb−Free) 96 Units / Rail MC74LCX08DTR2G TSSOP−14 (Pb−Free) 2500 Tape & Reel NLVLCX08DTR2G* TSSOP−14 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 4 MC74LCX08 Vcc Vmi An, Bn Vmi 0V tPHL tPLH VOH Vmo On Vmo VOL WAVEFORM 1 − PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Vcc Symbol 3.3 V + 0.3 V 2.7 V 2.5 V + 0.2 V Vmi 1.5 V 1.5 V Vcc/2 Vmo 1.5 V 1.5 V Vcc/2 Figure 3. AC Waveforms VCC PULSE GENERATOR DUT RT CL = CL = RL = RT = CL RL 50 pF at VCC = 3.3 + 0.3 V or equivalent (includes jig and probe capacitance) 30 pF at VCC = 2.5 + 0.2 V or equivalent (includes jig and probe capacitance) R1 = 500 W or equivalent ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−14 WB CASE 948G ISSUE C 14 DATE 17 FEB 2016 1 SCALE 2:1 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− K1 J J1 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE H G D DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ GENERIC MARKING DIAGRAM* 14 SOLDERING FOOTPRINT XXXX XXXX ALYWG G 7.06 1 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: 98ASH70246A DESCRIPTION: TSSOP−14 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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