MC74LCX157
Low-Voltage CMOS Quad
2-Input Multiplexer
With 5 V−Tolerant Inputs
(Non−Inverting)
The MC74LCX157 is a high performance, quad 2−input
multiplexer operating from a 2.3 to 3.6 V supply. High impedance
TTL compatible inputs significantly reduce current loading to input
drivers while TTL compatible outputs offer improved switching noise
performance. A VI specification of 5.5 V allows MC74LCX157 inputs
to be safely driven from 5 V devices.
Four bits of data from two sources can be selected using the Select
and Enable inputs. The four outputs present the selected data in the
true (non−inverted) form. The MC74LCX157 can also be used as
a function generator. Current drive capability is 24 mA at the outputs.
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MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
16
1
LCX157G
AWLYWW
1
16
Features
Designed for 2.3 to 3.6 V VCC Operation
5 V Tolerant Inputs − Interface Capability With 5 V TTL Logic
LVTTL Compatible
LVCMOS Compatible
24 mA Balanced Output Sink and Source Capability
Near Zero Static Supply Current (10 mA) Substantially Reduces
System Power Requirements
Latchup Performance Exceeds 500 mA
ESD Performance:
Human Body Model >2000 V
Machine Model >200 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 6
1
16
1
LCX
157
ALYWG
G
TSSOP−16
DT SUFFIX
CASE 948F
1
A
WL, L
Y
WW, W
G or G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
MC74LCX157/D
MC74LCX157
VCC
E
I0c
I1c
Zc
I0d
I1d
Zd
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
S
I0a
I1a
Za
I0b
I1b
Zb
GND
PIN NAMES
Pins
Function
I0n
Source 0 Data Inputs
I1n
Source 1 Data Inputs
E
Enable Input
S
Select Input
Zn
Outputs
Figure 1. 16−Lead Pinout (Top View)
S
E
I0a
I1a
I0b
I1b
I0c
I1c
I0d
I1d
1
15
2
4
Za
3
5
7
Zb
6
14
12
Zc
13
11
9
Zd
10
Figure 2. Logic Diagram
TRUTH TABLE
Inputs
Outputs
E
S
I0n
I1n
Zn
H
L
L
L
L
X
H
H
L
L
X
X
X
L
H
X
L
H
X
X
L
L
H
L
H
H = High Voltage Level; L = Low Voltage Level; X = High or Low Voltage Level ; For ICC Reasons DO
NOT FLOAT Inputs
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2
MC74LCX157
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Value
DC Supply Voltage
VI
DC Input Voltage
VO
DC Output Voltage
IIK
DC Input Diode Current
IOK
DC Output Diode Current
Condition
Units
−0.5 to +7.0
V
−0.5 VI +7.0
V
−0.5 VO VCC + 0.5
(Note 1)
V
−50
VI < GND
mA
−50
VO < GND
mA
+50
VO > VCC
mA
IO
DC Output Source/Sink Current
50
mA
ICC
DC Supply Current Per Supply Pin
100
mA
IGND
DC Ground Current Per Ground Pin
100
mA
TSTG
Storage Temperature Range
MSL
Moisture Sensitivity
−65 to +150
C
Level 1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Output in HIGH or LOW State. IO absolute maximum rating must be observed.
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
Operating
Data Retention Only
Min
Typ
Max
2.0
1.5
3.3
3.3
3.6
3.6
VI
Input Voltage
0
5.5
0
Units
V
V
VO
Output Voltage (HIGH or LOW State)
VCC
V
IOH
HIGH Level Output Current, VCC = 3.0 V − 3.6 V
−24
mA
IOL
LOW Level Output Current, VCC = 3.0 V − 3.6 V
24
mA
IOH
HIGH Level Output Current, VCC = 2.7 V − 3.0 V
−12
mA
IOL
LOW Level Output Current, VCC = 2.7 V − 3.0 V
12
mA
TA
Operating Free−Air Temperature
−40
+85
C
0
10
ns/V
Dt/DV
Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V,
VCC = 3.0 V
ORDERING INFORMATION
Package
Shipping†
MC74LCX157DR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC74LCX157DTG
TSSOP−16
(Pb−Free)
96 Units / Rail
MC74LCX157DTR2G
TSSOP−16
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
MC74LCX157
DC ELECTRICAL CHARACTERISTICS
TA = −40C to +85C
Symbol
Condition
Min
VIH
HIGH Level Input Voltage (Note 2)
2.7 V VCC 3.6 V
2.0
VIL
LOW Level Input Voltage (Note 2)
2.7 V VCC 3.6 V
VOH
HIGH Level Output Voltage
VOL
IOFF
Characteristic
LOW Level Output Voltage
Power Off Leakage Current
Max
Units
V
0.8
2.7 V VCC 3.6 V; IOH = −100 mA
VCC − 0.2
VCC = 2.7 V; IOH = −12 mA
2.2
VCC = 3.0 V; IOH = −18 mA
2.4
VCC = 3.0 V; IOH = −24 mA
2.2
V
V
2.7 V VCC 3.6 V; IOL = 100 mA
0.2
VCC = 2.7 V; IOL = 12 mA
0.4
VCC = 3.0 V; IOL = 16 mA
0.4
V
VCC = 3.0 V; IOL = 24 mA
0.55
VCC = 0, VIN = 5.5 V or VOUT = 5.5 V
10
mA
IIN
Input Leakage Current
VCC = 3.6 V, VIN = 5.5 V or GND
5
mA
ICC
Quiescent Supply Current
VCC = 3.6 V, VIN = 5.5 V or GND
10
mA
2.3 VCC 3.6 V; VIH = VCC − 0.6 V
500
mA
DICC
Increase in ICC per Input
2. These values of VI are used to test DC electrical characteristics only.
AC CHARACTERISTICS (tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W)
Limits
TA = −40C to +85C
VCC = 3.0 V to 3.6 V
Symbol
Waveform
Min
Max
Max
Units
tPLH
tPHL
Propagation Delay
In to Zn
1
1.5
1.5
5.8
5.8
6.3
6.3
ns
tPLH
tPHL
Propagation Delay
S to Zn
1,2
1.5
1.5
7.0
7.0
8.0
8.0
ns
tPLH
tPHL
Propagation Delay
E to Zn
2
1.5
1.5
7.0
7.0
8.0
8.0
ns
tOSHL
tOSLH
Parameter
VCC = 2.7 V
Output−to−Output Skew
(Note 3)
1.0
1.0
ns
3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25C
Symbol
Characteristic
Condition
Min
Typ
Max
Units
VOLP
Dynamic LOW Peak Voltage (Note 4)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
VOLV
Dynamic LOW Valley Voltage (Note 4)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
0.8
V
4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
CIN
Parameter
Condition
Typical
Units
Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
7
pF
COUT
Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
8
pF
CPD
Power Dissipation Capacitance
10 MHz, VCC = 3.3 V, VI = 0 V or VCC
25
pF
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4
MC74LCX157
2.7 V
In, S
1.5 V
1.5 V
0V
tPHL
tPLH
VOH
1.5 V
Zn
1.5 V
VOL
WAVEFORM 1 - NON-INVERTING PROPAGATION DELAYS
tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns
2.7 V
E, S
1.5 V
1.5 V
0V
tPHL
tPLH
VOH
Zn
1.5 V
1.5 V
VOL
WAVEFORM 2 - INVERTING PROPAGATION DELAYS
tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns
Figure 3. AC Waveforms
VCC
PULSE
GENERATOR
DUT
RT
CL = 50 pF or equivalent (Includes jig and probe capacitance)
RL = R1 = 500 W or equivalent
RT = ZOUT of pulse generator (typically 50 W)
Figure 4. Test Circuit
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5
CL
RL
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
−A−
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
16 PL
0.25 (0.010)
M
T B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR, DYE #1
BASE, #1
EMITTER, #1
COLLECTOR, #1
COLLECTOR, #2
BASE, #2
EMITTER, #2
COLLECTOR, #2
COLLECTOR, #3
BASE, #3
EMITTER, #3
COLLECTOR, #3
COLLECTOR, #4
BASE, #4
EMITTER, #4
COLLECTOR, #4
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 5:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
DRAIN, DYE #1
DRAIN, #1
DRAIN, #2
DRAIN, #2
DRAIN, #3
DRAIN, #3
DRAIN, #4
DRAIN, #4
GATE, #4
SOURCE, #4
GATE, #3
SOURCE, #3
GATE, #2
SOURCE, #2
GATE, #1
SOURCE, #1
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
STYLE 7:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
SOURCE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE P‐CH
SOURCE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE N‐CH
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
EMITTER, #4
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC−16
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16
DATE 19 OCT 2006
1
SCALE 2:1
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
S
V
S
K
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT
7.06
16
XXXX
XXXX
ALYW
1
1
0.65
PITCH
16X
0.36
DOCUMENT NUMBER:
DESCRIPTION:
16X
1.26
98ASH70247A
TSSOP−16
DIMENSIONS: MILLIMETERS
XXXX
A
L
Y
W
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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