MC74LCX240DTR2

MC74LCX240 Low-Voltage CMOS Octal Buffer With 5 V−Tolerant Inputs and Outputs (3−State, Inverting) www.onsemi.com The MC74LCX240 is a high performance, inverting octal buffer operating from a 2.3 to 3.6 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A VI specification of 5.5 V allows MC74LCX240 inputs to be safely driven from 5 V devices. The MC74LCX240 is suitable for memory address driving and all TTL level bus oriented transceiver applications. Current drive capability is 24 mA at the outputs. The Output Enable (OE) input, when HIGH, disables the outputs by placing them in a HIGH Z condition. MARKING DIAGRAMS 20 20 LCX240 AWLYYWWG 1 SOIC−20 WB DW SUFFIX CASE 751D 1 Features • • • • • • • • • • • Designed for 2.3 to 3.6 V VCC Operation 5 V Tolerant − Interface Capability With 5 V TTL Logic Supports Live Insertion and Withdrawal IOFF Specification Guarantees High Impedance When VCC = 0 V LVTTL Compatible LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current in All Three Logic States (10 mA) Substantially Reduces System Power Requirements Latchup Performance Exceeds 500 mA ESD Performance: ♦ Human Body Model >2000 V ♦ Machine Model >200 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant © Semiconductor Components Industries, LLC, 2012 March, 2019 − Rev. 11 1 20 20 LCX 240 ALYWG G 1 TSSOP−20 DT SUFFIX CASE 948E A WL, L YY, Y WW, W G or G 1 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: MC74LCX240/D MC74LCX240 1OE VCC 2OE 1O0 2D0 1O1 2D1 1O2 2D2 1O3 2D3 20 19 18 17 16 15 14 13 12 11 1D0 1D1 1D2 1 2 3 4 5 6 7 8 9 10 1OE 1D0 2O0 1D1 2O1 1D2 2O2 1D3 2O3 GND 1D3 1 2 18 4 16 6 14 8 12 1O0 1O1 1O2 1O3 Figure 1. Pinout: 20−Lead (Top View) 2OE 2D0 PIN NAMES 2D1 Pins Function nOE Output Enable Inputs 1Dn, 2Dn Data Inputs 1On, 2On 3−State Outputs 2D2 2D3 19 17 3 15 5 13 7 11 9 2O0 2O1 2O2 2O3 Figure 2. LOGIC DIAGRAM TRUTH TABLE INPUTS H L Z X OUTPUTS 1OE 2OE 1Dn 2Dn 1On, 2On L L H L H L H X Z = = = = High Voltage Level Low Voltage Level High Impedance State High or Low Voltage Level and Transitions Are Acceptable; for ICC reasons, DO NOT FLOAT Inputs www.onsemi.com 2 MC74LCX240 ORDERING INFORMATION Package Shipping† MC74LCX240DTR2G TSSOP−20 (Pb−Free) 2500 Tape & Reel MC74LCX240DWR2G SOIC−20 WB (Pb−Free) 1000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Symbol VCC Parameter Value DC Supply Voltage Condition Units −0.5 to +7.0 V VI DC Input Voltage −0.5 ≤ VI ≤ +7.0 VO DC Output Voltage −0.5 ≤ VO ≤ +7.0 Output in 3−State V V −0.5 ≤ VO ≤ VCC + 0.5 Note 1 V IIK DC Input Diode Current −50 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C MSL Moisture Sensitivity Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Output in HIGH or LOW State. IO absolute maximum rating must be observed. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Operating Data Retention Only Min Typ Max 2.0 1.5 3.3 3.3 3.6 3.6 Units V VI Input Voltage 0 5.5 VO Output Voltage HIGH or LOW State 3−State 0 0 VCC 5.5 IOH HIGH Level Output Current, VCC = 3.0 V − 3.6 V −24 mA IOL LOW Level Output Current, VCC = 3.0 V − 3.6 V 24 mA IOH HIGH Level Output Current, VCC = 2.7 V − 3.0 V −12 mA IOL LOW Level Output Current, VCC = 2.7 V − 3.0 V 12 mA TA Operating Free−Air Temperature −40 +125 °C 0 10 ns/V Dt/DV Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V V V DC ELECTRICAL CHARACTERISTICS TA = −40°C to +85°C Symbol Characteristic Condition Min 2.0 VIH HIGH Level Input Voltage (Note 2) 2.7 V ≤ VCC ≤ 3.6 V VIL LOW Level Input Voltage (Note 2) 2.7 V ≤ VCC ≤ 3.6 V VOH HIGH Level Output Voltage Max TA = −40°C to +125°C Min 2.0 0.8 VCC − 0.2 VCC − 0.2 VCC = 2.7 V; IOH = −12 mA 2.2 2.2 VCC = 3.0 V; IOH = −18 mA 2.4 2.4 VCC = 3.0 V; IOH = −24 mA 2. These values of VI are used to test DC electrical characteristics only. 2.2 2.2 3 Units V 0.8 2.7 V ≤ VCC ≤ 3.6 V; IOH = −100 mA www.onsemi.com Max V V MC74LCX240 DC ELECTRICAL CHARACTERISTICS (Continued) TA = −40°C to +85°C Symbol VOL Characteristic Condition LOW Level Output Voltage IOZ 3−State Output Current IOFF Power Off Leakage Current Min TA = −40°C to +125°C Max Min Max Units V 2.7 V ≤ VCC ≤ 3.6 V; IOL = 100 mA 0.2 0.2 VCC = 2.7 V; IOL = 12 mA 0.4 0.4 VCC = 3.0 V; IOL = 16 mA 0.4 0.4 VCC = 3.0 V; IOL = 24 mA 0.55 0.6 VCC = 3.6 V, VIN = VIH or VIL, VOUT = 0 to 5.5 V ±5 ±5 mA VCC = 0, VIN = 5.5 V or VOUT = 5.5 V 10 10 mA IIN Input Leakage Current VCC = 3.6 V, VIN = 5.5 V or GND ±5 ±5 mA ICC Quiescent Supply Current VCC = 3.6 V, VIN = 5.5 V or GND 10 10 mA DICC Increase in ICC per Input 2.3 ≤ VCC ≤ 3.6 V; VIH = VCC − 0.6 V 500 500 mA AC CHARACTERISTICS (tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W) Limits TA = −40°C to +125°C VCC = 3.0 V to 3.6 V Symbol Parameter VCC = 2.7 V Waveform Min Max Max Units tPLH tPHL Propagation Delay Input to Output 1 1.5 1.5 6.5 6.5 7.5 7.5 ns tPZH tPZL Output Enable Time to High and Low Level 2 1.5 1.5 8.0 8.0 9.0 9.0 ns tPHZ tPLZ Output Disable Time From High and Low Level 2 1.5 1.5 7.0 7.0 8.0 8.0 ns tOSHL tOSLH Output−to−Output Skew (Note 3) 1.0 1.0 ns 3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol Characteristic Condition Min Typ Max Units VOLP Dynamic LOW Peak Voltage (Note 4) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V 0.8 V VOLV Dynamic LOW Valley Voltage (Note 4) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V 0.8 V 4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Condition Typical Units Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 7 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 8 pF CPD Power Dissipation Capacitance 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 25 pF CIN Parameter www.onsemi.com 4 MC74LCX240 2.7 V 1Dn, 2Dn 1.5 V 1.5 V 0V tPHL tPLH VOH 1.5 V 1On, 2On 1.5 V VOL WAVEFORM 1 - PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns 2.7 V 1.5 V 1OE, 2OE 0V tPZH tPHZ VCC VOH - 0.3 V 1.5 V 1On, 2On ≈0V tPZL tPLZ ≈ 3.0 V 1.5 V 1On, 2On VOL + 0.3 V GND WAVEFORM 2 - OUTPUT ENABLE AND DISABLE TIMES tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Waveforms VCC R1 PULSE GENERATOR DUT RT CL TEST RL SWITCH tPLH, tPHL Open tPZL, tPLZ 6V Open Collector/Drain tPLH and tPHL 6V tPZH, tPHZ GND CL = 50 pF or equivalent (Includes jig and probe capacitance) RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit www.onsemi.com 5 6V OPEN GND MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−20 WB CASE 751D−05 ISSUE H DATE 22 APR 2015 SCALE 1:1 A 20 q X 45 _ M E h 0.25 H NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 1 10 20X B b 0.25 M T A S B DIM A A1 b c D E e H h L q S L A 18X e SEATING PLANE A1 c T GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 20 20X 20X 1.30 0.52 20 XXXXXXXXXXX XXXXXXXXXXX AWLYYWWG 11 1 11.00 1 XXXXX A WL YY WW G 10 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ 98ASB42343B SOIC−20 WB = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−20 WB CASE 948E ISSUE D DATE 17 FEB 2016 SCALE 2:1 20X 0.15 (0.006) T U 2X L K REF 0.10 (0.004) S L/2 20 M T U S V ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ K K1 S J J1 11 B SECTION N−N −U− PIN 1 IDENT 0.25 (0.010) N 1 10 M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C G D H DETAIL E 0.100 (0.004) −T− SEATING PLANE DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 XXXX XXXX ALYWG G 1 0.65 PITCH 16X 0.36 16X 1.26 DOCUMENT NUMBER: 98ASH70169A DESCRIPTION: TSSOP−20 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DIMENSIONS: MILLIMETERS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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