MC74LCX86DR2G

MC74LCX86 Low-Voltage CMOS Quad 2-Input XOR Gate With 5 V−Tolerant Inputs The MC74LCX86 is a high performance, quad 2−input XOR gate operating from a 2.3 to 3.6 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A VI specification of 5.5 V allows MC74LCX86 inputs to be safely driven from 5.0 V devices. Current drive capability is 24 mA at the outputs. http://onsemi.com MARKING DIAGRAMS 14 14 Features          SOIC−14 D SUFFIX CASE 751A 1 Designed for 2.3 to 3.6 V VCC Operation 5.0 V Tolerant Inputs − Interface Capability With 5.0 V TTL Logic LVTTL Compatible LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current (10 mA) Substantially Reduces System Power Requirements Latchup Performance Exceeds 500 mA ESD Performance: Human Body Model >2000 V Machine Model >200 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant LCX86G AWLYWW 1 14 14 1 TSSOP−14 DT SUFFIX CASE 948G 1 A L, WL Y, YY W, WW G or G LCX 86 ALYWG G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.  Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 8 1 Publication Order Number: MC74LCX86/D MC74LCX86 1 A0 VCC A2 B2 O2 A3 B3 O3 B0 14 13 12 11 10 9 8 A1 3 2 4 6 5 B1 11 12 B2 3 4 5 6 7 A0 B0 O0 A1 B1 O1 GND O2 10 A3 2 O1 13 A2 1 O0 8 9 B3 Figure 1. Pinout: 14−Lead (Top View) O3 Figure 2. Logic Diagram PIN NAMES TRUTH TABLE Pins Function Inputs Outputs An, Bn Data Inputs An On Outputs L L L L H H H L H H H L Bn On MAXIMUM RATINGS Symbol VCC Parameter Value DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current Condition Units −0.5 to +7.0 V −0.5  VI  +7.0 V −0.5  VO  VCC + 0.5 Note 1 V −50 VI < GND mA −50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current 50 mA ICC DC Supply Current Per Supply Pin 100 mA IGND DC Ground Current Per Ground Pin 100 mA TSTG Storage Temperature Range MSL Moisture Sensitivity −65 to +150 C Level 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Output in HIGH or LOW State. IO absolute maximum rating must be observed. http://onsemi.com 2 MC74LCX86 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage Operating Data Retention Only Min Typ Max 2.0 1.5 3.3 3.3 3.6 3.6 VI Input Voltage 0 5.5 0 Units V V VO Output Voltage (HIGH or LOW State) VCC V IOH HIGH Level Output Current, VCC = 3.0 V − 3.6 V −24 mA IOL LOW Level Output Current, VCC = 3.0 V − 3.6 V 24 mA IOH HIGH Level Output Current, VCC = 2.7 V − 3.0 V −12 mA IOL LOW Level Output Current, VCC = 2.7 V − 3.0 V 12 mA TA Operating Free−Air Temperature −40 +85 C 0 10 ns/V Dt/DV Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V DC ELECTRICAL CHARACTERISTICS TA = −40C to +85C Symbol Characteristic Condition Min 2.0 VIH HIGH Level Input Voltage (Note 2) 2.7 V  VCC  3.6 V VIL LOW Level Input Voltage (Note 2) 2.7 V  VCC  3.6 V VOH HIGH Level Output Voltage VOL IOFF LOW Level Output Voltage V 0.8 2.7 V  VCC  3.6 V; IOH = −100 mA VCC − 0.2 VCC = 2.7 V; IOH = −12 mA 2.2 VCC = 3.0 V; IOH = −18 mA 2.4 VCC = 3.0 V; IOH = −24 mA 2.2 Units V V 2.7 V  VCC  3.6 V; IOL = 100 mA 0.2 VCC = 2.7 V; IOL= 12 mA 0.4 VCC = 3.0 V; IOL = 16 mA 0.4 VCC = 3.0 V; IOL = 24 mA 0.55 V VCC = 0, VIN = 5.5 V or VOUT = 5.5 V 10 mA IIN Input Leakage Current VCC = 3.6 V, VIN = 5.5 V or GND 5 mA ICC Quiescent Supply Current VCC = 3.6 V, VIN = 5.5 V or GND 10 mA 2.3  VCC  3.6 V; VIH = VCC − 0.6 V 500 mA DICC Power Off Leakage Current Max Increase in ICC per Input 2. These values of VI are used to test DC electrical characteristics only. AC CHARACTERISTICS (tR = tF = 2.5ns; CL = 50pF; RL = 500W) Limits TA = −40C to +85C VCC = 3.0 V to 3.6 V Symbol Parameter tPLH tPHL Propagation Delay Input to Output tOSHL tOSLH Output−to−Output Skew (Note 3) VCC = 2.7 V Waveform Min Max Max Units 1,2 1.5 1.5 6.5 6.5 7.0 7.0 ns 1.0 1.0 ns 3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. http://onsemi.com 3 MC74LCX86 DYNAMIC SWITCHING CHARACTERISTICS TA = +25C Symbol Characteristic Condition Min Typ Max Units VOLP Dynamic LOW Peak Voltage (Note 4) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V 0.8 V VOLV Dynamic LOW Valley Voltage (Note 4) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V 0.8 V 4. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Condition Typical Units Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 7 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 8 pF CPD Power Dissipation Capacitance 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 25 pF CIN Parameter ORDERING INFORMATION Package Shipping† MC74LCX86DR2G SOIC−14 (Pb−Free) 2500 Tape & Reel MC74LCX86DTR2G TSSOP−14 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74LCX86 2.7 V 1.5 V An, Bn 1.5 V 0V tPLH tPHL VOH 1.5 V On 1.5 V VOL WAVEFORM 1 - NON-INVERTING PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns 2.7 V 1.5 V An, Bn 1.5 V 0V tPHL tPLH VOH 1.5 V On 1.5 V VOL WAVEFORM 2 - INVERTING PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. AC Waveforms VCC PULSE GENERATOR DUT RT CL CL = 50pF or equivalent (Includes jig and probe capacitance) RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit http://onsemi.com 5 RL MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−14 WB CASE 948G ISSUE C 14 DATE 17 FEB 2016 1 SCALE 2:1 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− K1 J J1 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE H G D DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ GENERIC MARKING DIAGRAM* 14 SOLDERING FOOTPRINT XXXX XXXX ALYWG G 7.06 1 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: 98ASH70246A DESCRIPTION: TSSOP−14 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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