MC74LCXU04
Low-Voltage CMOS
Unbuffered Hex Inverter
With 5 V−Tolerant Inputs
The MC74LCXU04 is a high performance unbuffered hex inverter
operating from a 2.3 to 3.6 V supply. (High impedance TTL
compatible inputs significantly reduce current loading to input drivers
while TTL compatible outputs offer improved switching noise
performance.) A VI specification of 5.5 V allows MC74LCXU04
inputs to be safely driven from 5 V devices.
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MARKING
DIAGRAMS
14
Features
•
•
•
•
•
SOIC−14
D SUFFIX
CASE 751A
14
Designed for 2.3 to 3.6 V VCC Operation
5 V Tolerant Inputs − Interface Capability With 5 V TTL Logic
1
1
LVTTL Compatible
LVCMOS Compatible
Near Zero Static Supply Current (10 mA) Substantially Reduces
System Power Requirements
Latchup Performance Exceeds 500 mA
•
• ESD Performance:
Human Body Model >2000 V
Machine Model >200 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
14
14
1
♦
LCX
U04
ALYWG
G
TSSOP−14
DT SUFFIX
CASE 948G
1
♦
•
LCXU04G
AWLYWW
A
L, WL
Y, YY
W, WW
G or G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 9
1
Publication Order Number:
MC74LCXU04/D
MC74LCXU04
VCC
A3
O3
A4
O4
A5
O5
14
13
12
11
10
9
8
PIN NAMES
Pins
Function
An
Data Inputs
On
Outputs
TRUTH TABLE
An
On
1
2
3
4
5
6
7
L
H
A0
O0
A1
O1
A2
O2
GND
H
L
Figure 1. Pinout: 14−Lead (Top View)
A0
A1
A2
A3
A4
A5
1
2
3
4
5
6
13
12
11
10
9
8
O0
O1
O2
O3
O4
O5
Figure 2. Logic Diagram
MAXIMUM RATINGS
Symbol
VCC
Parameter
DC Supply Voltage
VI
DC Input Voltage
VO
DC Output Voltage
IIK
Value
Condition
Units
−0.5 to +7.0
V
−0.5 ≤ VI ≤ +7.0
V
−0.5 ≤ VO ≤ VCC + 0.5
Output in HIGH or LOW State. (Note 1)
V
DC Input Diode Current
−50
VI < GND
mA
IOK
DC Output Diode Current
−50
VO < GND
mA
+50
VO > VCC
mA
IO
DC Output Source/Sink Current
±50
mA
ICC
DC Supply Current Per Supply Pin
±100
mA
IGND
DC Ground Current Per Ground Pin
±100
mA
TSTG
Storage Temperature Range
−65 to +150
°C
MSL
Moisture Sensitivity
Level 1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. IO absolute maximum rating must be observed.
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2
MC74LCXU04
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Min
Typ
Max
2.0
1.5
2.5, 3.3
2.5, 3.3
3.6
3.6
Supply Voltage
Operating
Data Retention Only
VI
Input Voltage
0
5.5
0
VCC
VO
Output Voltage (HIGH or LOW State)
IOH
HIGH Level Output Current
VCC = 3.0 V − 3.6 V
VCC = 2.7 V − 3.0 V
VCC = 2.3 V − 2.7 V
−18
−12
−8
IOL
LOW Level Output Current
VCC = 3.0 V − 3.6 V
VCC = 2.7 V − 3.0 V
VCC = 2.3 V − 2.7 V
+16
+12
+8
TA
Operating Free−Air Temperature
Dt/DV
Units
V
V
V
mA
mA
−40
+85
°C
0
10
ns/V
Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V
DC ELECTRICAL CHARACTERISTICS
TA = −40°C to +85°C
Symbol
VIH
VIL
VOH
VOL
IOFF
Characteristic
HIGH Level Input Voltage (Note 2)
LOW Level Input Voltage (Note 2)
HIGH Level Output Voltage
LOW Level Output Voltage
Power Off Leakage Current
IIN
Input Leakage Current
ICC
Quiescent Supply Current
DICC
Increase in ICC per Input
Condition
Min
VCC = 2.3 V
1.7
VCC = 2.7 V
2.1
VCC = 3.0 V
2.2
VCC = 3.6 V
2.7
Max
V
VCC = 2.3 V
0.55
VCC = 2.7 V
0.55
VCC = 3.0 V
0.55
VCC = 3.6 V
0.55
2.3 V ≤ VCC ≤ 3.6 V; IOL = 100 mA
VCC − 0.2
VCC = 2.3 V; IOH = −8 mA
1.8
VCC = 2.7 V; IOH = −12 mA
2.2
VCC = 3.0 V; IOH = −18 mA
2.4
Units
V
V
2.3 V ≤ VCC ≤ 3.6 V; IOL = 100 mA
0.2
V
VCC = 2.3 V; IOL = 8 mA
0.6
VCC = 2.7 V; IOL = 12 mA
0.4
VCC = 3.0 V; IOL = 16 mA
0.5
VCC = 0, VIN = 5.5 V or VOUT = 5.5 V
10
mA
VCC = 3.6 V, VIN = 5.5 V or GND
±5
mA
VCC = 3.6 V, VIN = 5.5 V or GND
10
mA
2.3 ≤ VCC ≤ 3.6 V; VIH = VCC − 0.6 V
500
mA
2. These values of VI are used to test DC electrical characteristics only.
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3
MC74LCXU04
AC CHARACTERISTICS (tR = tF = 2.5 ns; RL = 500 W) (Note 3)
Limits
TA = −40°C to +85°C
Parameter
Symbol
tPLH
tPHL
tOSHL
tOSLH
Propagation Delay
Input to Output
VCC = 3.3 V ± 0.3 V
VCC = 2.7 V
VCC = 2.5 V ± 0.2 V
CL = 50 pF
CL = 50 pF
CL = 30 pF
Waveform
Min
Max
Min
Max
Min
Max
Units
1
1.0
1.0
3.6
3.6
1.0
1.0
4.5
4.5
1.0
1.0
4.3
4.3
ns
Output−to−Output Skew
(Note 4)
1.0
1.0
ns
3. These AC parameters are preliminary and may be modified.
4. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25°C
Symbol
Characteristic
Condition
Min
Typ
Max
Units
VOLP
Dynamic LOW Peak Voltage
(Note 5)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.8
0.6
V
VOLV
Dynamic LOW Valley Voltage
(Note 5)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.8
−0.6
V
5. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Condition
Typical
Units
Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
7
pF
COUT
Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
8
pF
CPD
Power Dissipation Capacitance
10 MHz, VCC = 3.3 V, VI = 0 V or VCC
25
pF
CIN
Parameter
ORDERING INFORMATION
Package
Shipping†
MC74LCXU04DG
SOIC−14
(Pb−Free)
55 Units / Rail
MC74LCXU04DR2G
SOIC−14
(Pb−Free)
2500 Tape & Reel
MC74LCXU04DTG
TSSOP−14
(Pb−Free)
96 Units / Rail
MC74LCXU04DTR2G
TSSOP−14
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74LCXU04
VCC
An
Vmi
Vmi
0V
tPHL
tPLH
Vmo
On
VOH
Vmo
VOL
PROPAGATION DELAYS
tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns
VCC
Symbol
3.3 V ± 0.3 V
2.7 V
2.5 V ± 0.2 V
Vmi
1.5 V
1.5 V
VCC/2
Vmo
1.5 V
1.5 V
VCC/2
Figure 3. AC Waveforms
VCC
PULSE
GENERATOR
DUT
RT
CL =
CL =
RL =
RT =
CL
RL
50 pF at VCC = 3.3 ± 0.3 V or equivalent (includes jig and probe capacitance)
30 pF at VCC = 2.5 ± 0.2 V or equivalent (includes jig and probe capacitance)
R1 = 500 W or equivalent
ZOUT of pulse generator (typically 50 W)
Figure 4. Test Circuit
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE L
14
1
SCALE 1:1
D
DATE 03 FEB 2016
A
B
14
8
A3
E
H
L
1
0.25
B
M
DETAIL A
7
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
14
14X
1.18
XXXXXXXXXG
AWLYWW
1
1
1.27
PITCH
XXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−14
CASE 751A−03
ISSUE L
DATE 03 FEB 2016
STYLE 1:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 2:
CANCELLED
STYLE 3:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON CATHODE
STYLE 4:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 5:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 6:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 7:
PIN 1. ANODE/CATHODE
2. COMMON ANODE
3. COMMON CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. ANODE/CATHODE
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. COMMON CATHODE
12. COMMON ANODE
13. ANODE/CATHODE
14. ANODE/CATHODE
STYLE 8:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−14 WB
CASE 948G
ISSUE C
14
DATE 17 FEB 2016
1
SCALE 2:1
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
DETAIL E
K
A
−V−
K1
J J1
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
G
D
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
GENERIC
MARKING DIAGRAM*
14
SOLDERING FOOTPRINT
XXXX
XXXX
ALYWG
G
7.06
1
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
98ASH70246A
DESCRIPTION:
TSSOP−14 WB
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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