MC74LVX125DTG

MC74LVX125 Quad Bus Buffer With 5 V−Tolerant Inputs The MC74LVX125 is an advanced high speed CMOS quad bus buffer. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. The MC74LVX125 requires the 3−state control input (OE) to be set High to place the output into the high impedance state. http://onsemi.com Features • • • • • • • • • High Speed: tPD = 4.4 ns (Typ) at VCC = 3.3 V Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Low Noise: VOLP = 0.5 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA Human Body Model > 2000 V Machine Model > 200 V These Devices are Pb−Free and are RoHS Compliant SOIC−14 NB D SUFFIX CASE 751A TSSOP−14 DT SUFFIX CASE 948G PIN ASSIGNMENT VCC OE3 D3 O3 OE2 D2 14 11 13 12 10 9 O2 8 ESD Performance: 1 OE0 OE2 2 D0 3 O0 D2 4 OE1 OE3 5 D1 6 O1 D3 1 2 OE0 D0 10 9 6 7 O1 GND 14−Lead (Top View) 8 O2 13 12 3 4 5 O0 OE1 D1 11 MARKING DIAGRAMS 14 O3 LVX125G AWLYWW Figure 1. Logic Diagram 1 SOIC−14 NB PIN NAMES Pins Function OEn Dn On Output Enable Inputs Data Inputs 3−State Outputs 14 LVX 125 ALYWG G 1 FUNCTION TABLE TSSOP−14 INPUTS OUTPUTS OEn Dn On L L H L H X L H Z LVX125 A WL, L Y WW, W G or G H = High Voltage Level; L = Low Voltage Level; Z = High Impedance State; X = High or Low Voltage Level and Transitions Are Acceptable, for ICC reasons, DO NOT FLOAT Inputs = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 4 1 Publication Order Number: MC74LVX125/D MC74LVX125 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage Parameter –0.5 to +7.0 V Vin DC Input Voltage –0.5 to +7.0 V Vout DC Output Voltage –0.5 to VCC +0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation 180 mW Tstg Storage Temperature –65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 2.0 3.6 V VCC DC Supply Voltage Vin DC Input Voltage 0 5.5 V Vout DC Output Voltage 0 VCC V −40 +85 _C 0 100 ns/V TA Dt/DV Operating Temperature, All Package Types Input Rise and Fall Time Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions TA = 25°C VCC V Min 1.5 2.0 2.4 VIH High−Level Input Voltage 2.0 3.0 3.6 VIL Low−Level Input Voltage 2.0 3.0 3.6 VOH High−Level Output Voltage (Vin = VIH or VIL) IOH = −50mA IOH = −50mA IOH = −4mA 2.0 3.0 3.0 VOL Low−Level Output Voltage (Vin = VIH or VIL) IOL = 50mA IOL = 50mA IOL = 4mA 2.0 3.0 3.0 Iin Input Leakage Current Vin = 5.5V or GND IOZ Maximum Three−State Leakage Current ICC Quiescent Supply Current Typ TA = −40 to 85°C Max Min 1.5 2.0 2.4 0.5 0.8 0.8 1.9 2.9 2.58 Max 2.0 3.0 0.0 0.0 Unit V 0.5 0.8 0.8 1.9 2.9 2.48 V V 0.1 0.1 0.36 0.1 0.1 0.44 V 3.6 ±0.1 ±1.0 mA Vin = VIL or VIH Vout = VCC or GND 3.6 ±0.25 ±2.5 mA Vin = VCC or GND 3.6 4.0 40.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 MC74LVX125 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ tOSHL tOSLH Parameter Test Conditions Propagation Delay Input to Output Output Enable Time OE to O Output Disable Time OE to O Output−to−Output Skew (Note 1) Min TA = −40 to 85°C Typ Max Min Max Unit ns VCC = 2.7V CL = 15pF CL = 50pF 5.8 8.3 10.1 13.6 1.0 1.0 13.5 17.0 VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 4.4 6.9 6.2 9.7 1.0 1.0 8.5 12.0 VCC = 2.7V RL =1kW CL = 15pF CL = 50pF 5.3 7.8 9.3 12.8 1.0 1.0 12.5 16.0 VCC = 3.3 ± 0.3V RL =1kW CL = 15pF CL = 50pF 4.0 6.5 5.6 9.1 1.0 1.0 7.5 11.0 VCC = 2.7V RL =1kW CL = 50pF 10.0 15.7 1.0 19.0 VCC = 3.3 ± 0.3V RL =1kW CL = 50pF 8.3 11.2 1.0 13.0 VCC = 2.7V VCC = 3.3 ± 0.3V CL = 50pF CL = 50pF 1.5 1.5 1.5 1.5 ns ns ns 1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. CAPACITIVE CHARACTERISTICS TA = 25°C Symbol Min Parameter TA = −40 to 85°C Typ Max 4 10 Min Max Unit 10 pF Cin Input Capacitance Cout Maximum Three−State Output Capacitance 6 pF CPD Power Dissipation Capacitance (Note 2) 14 pF 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 4 (per bit). CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 3.3V, Measured in SOIC Package) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.5 V VOLV Quiet Output Minimum Dynamic VOL −0.3 −0.5 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V http://onsemi.com 3 MC74LVX125 SWITCHING WAVEFORMS VCC VCC D OE 50% 50% GND GND tPLH O tPZL tPHL O 50% VCC HIGH IMPEDANCE 50% VCC tPZH O tPLZ VOL +0.3V tPHZ VOH -0.3V 50% VCC Figure 2. HIGH IMPEDANCE Figure 3. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance 1 kW CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 4. Propagation Delay Test Circuit Figure 5. Three−State Test Circuit ORDERING INFORMATION Package Shipping† MC74LVX125DG SOIC−14 NB (Pb−Free) 55 Units / Rail MC74LVX125DR2G SOIC−14 NB (Pb−Free) 2500 Tape & Reel MC74LVX125DTG TSSOP−14 (Pb−Free) 96 Units / Rail MC74LVX125DTR2G TSSOP−14 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE L 14 1 SCALE 1:1 D DATE 03 FEB 2016 A B 14 8 A3 E H L 1 0.25 B M DETAIL A 7 13X M b 0.25 M C A S B S 0.10 X 45 _ M A1 e DETAIL A h A C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 6.50 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 14 14X 1.18 XXXXXXXXXG AWLYWW 1 1 1.27 PITCH XXXXX A WL Y WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−14 CASE 751A−03 ISSUE L DATE 03 FEB 2016 STYLE 1: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. NO CONNECTION 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. NO CONNECTION 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 2: CANCELLED STYLE 3: PIN 1. NO CONNECTION 2. ANODE 3. ANODE 4. NO CONNECTION 5. ANODE 6. NO CONNECTION 7. ANODE 8. ANODE 9. ANODE 10. NO CONNECTION 11. ANODE 12. ANODE 13. NO CONNECTION 14. COMMON CATHODE STYLE 4: PIN 1. NO CONNECTION 2. CATHODE 3. CATHODE 4. NO CONNECTION 5. CATHODE 6. NO CONNECTION 7. CATHODE 8. CATHODE 9. CATHODE 10. NO CONNECTION 11. CATHODE 12. CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 5: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. NO CONNECTION 7. COMMON ANODE 8. COMMON CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. ANODE/CATHODE 12. ANODE/CATHODE 13. NO CONNECTION 14. COMMON ANODE STYLE 6: PIN 1. CATHODE 2. CATHODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE 7. CATHODE 8. ANODE 9. ANODE 10. ANODE 11. ANODE 12. ANODE 13. ANODE 14. ANODE STYLE 7: PIN 1. ANODE/CATHODE 2. COMMON ANODE 3. COMMON CATHODE 4. ANODE/CATHODE 5. ANODE/CATHODE 6. ANODE/CATHODE 7. ANODE/CATHODE 8. ANODE/CATHODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. COMMON CATHODE 12. COMMON ANODE 13. ANODE/CATHODE 14. ANODE/CATHODE STYLE 8: PIN 1. COMMON CATHODE 2. ANODE/CATHODE 3. ANODE/CATHODE 4. NO CONNECTION 5. ANODE/CATHODE 6. ANODE/CATHODE 7. COMMON ANODE 8. COMMON ANODE 9. ANODE/CATHODE 10. ANODE/CATHODE 11. NO CONNECTION 12. ANODE/CATHODE 13. ANODE/CATHODE 14. COMMON CATHODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42565B SOIC−14 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−14 WB CASE 948G ISSUE C 14 DATE 17 FEB 2016 1 SCALE 2:1 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− K1 J J1 ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE H G D DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ GENERIC MARKING DIAGRAM* 14 SOLDERING FOOTPRINT XXXX XXXX ALYWG G 7.06 1 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: 98ASH70246A DESCRIPTION: TSSOP−14 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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