MC74VHC373
Octal D-Type Latch
with 3-State Output
The MC74VHC373 is an advanced high speed CMOS octal latch
with 3−state output fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining CMOS low power dissipation.
This 8−bit D−type latch is controlled by a latch enable input and an
output enable input. When the output enable input is high, the eight
outputs are in a high impedance state.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
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MARKING
DIAGRAM
20
20
1
SOIC−20
DW SUFFIX
CASE 751D
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
VHC373
AWLYYWWG
High Speed: tPD = 5.0 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.9 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 186 FETs or 46.5 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
VHC373
A
WL, L
Y
WW, W
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
OE
1
20
VCC
Q0
2
19
Q7
D0
3
18
D7
D1
4
17
D6
Q1
5
16
Q6
Q2
6
15
Q5
D2
7
14
D5
D3
8
13
D4
Q3
9
12
Q4
10
11
LE
GND
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 8
1
Publication Order Number:
MC74VHC373/D
MC74VHC373
D0
D1
D2
DATA
INPUTS
D3
D4
D5
D6
D7
LE
OE
3
2
4
5
7
6
8
9
13
12
14
15
17
16
18
19
Q0
Q1
FUNCTION TABLE
Q2
Q3
Q4
INPUTS
NONINVERTING
OUTPUTS
Q5
Q6
Q7
OUTPUT
OE
LE
D
Q
L
L
L
H
H
H
L
X
H
L
X
X
H
L
No Change
Z
11
1
Figure 1. Logic Diagram
MAXIMUM RATINGS
Symbol
Parameter
VCC
DC Supply Voltage
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
SOIC Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
2.0
5.5
V
VCC
DC Supply Voltage
Vin
DC Input Voltage
0
5.5
V
Vout
DC Output Voltage
0
VCC
V
− 40
+ 85
_C
0
0
100
20
ns/V
TA
Operating Temperature
tr, tf
Input Rise and Fall Time
VCC = 3.3 V
VCC = 5.0 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
MC74VHC373
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VCC
V
Test Conditions
VIH
Minimum High−Level
Input Voltage
2.0
3.0 to
5.5
VIL
Maximum Low−Level
Input Voltage
2.0
3.0 to
5.5
VOH
Minimum High−Level
Output Voltage
Vin = VIH or VIL
IOH = − 50 mA
Vin = VIH or VIL
IOH = − 4 mA
IOH = − 8 mA
VOL
Maximum Low−Level
Output Voltage
Vin = VIH or VIL
IOL = 50 mA
TA = 25°C
Min
Typ
Max
Min
1.50
VCC x 0.7
2.0
3.0
4.5
1.9
2.9
4.4
3.0
4.5
2.58
3.94
Max
1.50
VCC x 0.7
0.50
VCC x 0.3
2.0
3.0
4.5
Unit
V
0.50
VCC x 0.3
V
V
1.9
2.9
4.4
2.48
3.80
2.0
3.0
4.5
Vin = VIH or VIL
IOL = 4 mA
IOL = 8 mA
TA = − 40 to 85°C
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
V
Iin
Maximum Input
Leakage Current
Vin = 5.5 V or GND
0 to 5.5
± 0.1
± 1.0
mA
IOZ
Maximum
Three−State Leakage
Current
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.25
± 2.5
mA
ICC
Maximum Quiescent
Supply Current
Vin = VCC or GND
5.5
4.0
40.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation Delay,
D to Q
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
tOSLH,
tOSHL
Maximum Propagation Delay,
LE to Q
Output Enable Time,
OE to Q
Output Disable Time,
OE to Q
Output to Output Skew
Test Conditions
Min
TA = − 40 to 85°C
Typ
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
7.3
9.8
11.4
14.9
1.0
1.0
13.5
17.0
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
4.9
6.4
7.2
9.2
1.0
1.0
8.5
10.5
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
7.0
9.5
11.0
14.5
1.0
1.0
13.0
16.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
5.0
6.5
7.2
9.2
1.0
1.0
8.5
10.5
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
7.3
9.8
11.4
14.9
1.0
1.0
13.5
17.0
VCC = 5.0 ± 0.5 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
5.5
7.0
8.1
10.1
1.0
1.0
9.5
11.5
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 50 pF
9.5
13.2
1.0
15.0
VCC = 5.0 ± 0.5V
RL = 1 kW
CL = 50 pF
6.5
9.2
1.0
10.5
VCC = 3.3 ± 0.3 V
(Note 1)
CL = 50 pF
1.5
1.5
ns
VCC = 5.5 ± 0.5 V
(Note 1)
CL = 50 pF
1.0
1.0
ns
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3
ns
ns
ns
MC74VHC373
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
Test Conditions
Min
TA = − 40 to 85°C
Typ
Max
10
Cin
Maximum Input Capacitance
4
Cout
Maximum Three−State Output
Capacitance (Output in
High−Impedance State)
6
Min
Max
Unit
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD
27
Power Dissipation Capacitance (Note 2)
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per latch). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V)
TA = 25°C
Symbol
Parameter
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.6
0.9
V
VOLV
Quiet Output Minimum Dynamic VOL
− 0.6
− 0.9
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
TIMING REQUIREMENTS (Input tr = tf = 3.0 ns)
TA = − 40
to 85°C
TA = 25°C
Symbol
Parameter
Test Conditions
Typ
Limit
Limit
Unit
Minimum Pulse Width, LE
VCC = 3.3 ± 0.3 V
VCC = 5.0 ±0.5 V
5.0
5.0
5.0
5.0
ns
tsu
Minimum Setup Time, D to LE
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
4.0
4.0
4.0
4.0
ns
th
Minimum Hold Time, D to LE
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
1.0
1.0
1.0
1.0
ns
tw(h)
ORDERING INFORMATION
Device
MC74VHC373DWR2G
Package
Shipping†
SOIC−20
(Pb−Free)
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74VHC373
SWITCHING WAVEFORMS
tw
VCC
D
LE
50%
VCC
50%
GND
GND
tPHL
tPLH
tPHL
tPLH
50% VCC
Q
Q
50% VCC
Figure 2.
Figure 3.
VCC
OE
50%
GND
tPZL
tPLZ
50% VCC
Q
VALID
VCC
HIGH
IMPEDANCE
D
50%
tsu
VOL +0.3V
tPZH
tPHZ
50% VCC
Q
VCC
LE
VOL -0.3V
GND
th
50%
GND
HIGH
IMPEDANCE
Figure 4.
Figure 5.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
1 kW
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
Figure 6.
Figure 7.
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5
MC74VHC373
D0
3
D1
4
D
Q
D
LE
LE
OE
D2
7
Q
D3
8
D
LE
Q
D4
13
D
LE
Q
D5
14
D
LE
Q
D6
17
D
LE
Q
D7
18
D
LE
Q
D
LE
Q
LE
11
1
2
Q0
5
Q1
6
Q2
9
Q3
12
Q4
Figure 8. EXPANDED LOGIC DIAGRAM
INPUT
Figure 9. INPUT EQUIVALENT CIRCUIT
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6
15
Q5
16
Q6
19
Q7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−20 WB
CASE 751D−05
ISSUE H
DATE 22 APR 2015
SCALE 1:1
A
20
q
X 45 _
M
E
h
0.25
H
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
11
B
M
D
1
10
20X
B
b
0.25
M
T A
S
B
DIM
A
A1
b
c
D
E
e
H
h
L
q
S
L
A
18X
e
SEATING
PLANE
A1
c
T
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
20
20X
20X
1.30
0.52
20
XXXXXXXXXXX
XXXXXXXXXXX
AWLYYWWG
11
1
11.00
1
XXXXX
A
WL
YY
WW
G
10
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
98ASB42343B
SOIC−20 WB
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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