MC74VHC541
Octal Bus Buffer
The MC74VHC541 is an advanced high speed CMOS octal bus
buffer fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The MC74VHC541 is a noninverting type. When either OE1 or
OE2 are high, the terminal outputs are in the high impedance state.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
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SOIC−20WB
SUFFIX DW
CASE 751D
20
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 3.7ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 1.2 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
A1
A2
A3
DATA
INPUTS
A4
A5
A6
A7
A8
OUTPUT
ENABLES
OE1
OE2
2
18
3
17
4
16
5
15
6
14
7
13
8
12
9
11
20
TSSOP−20
SUFFIX DT
CASE 948E
1
PIN ASSIGNMENT
OE1
1
20
VCC
A1
2
19
OE2
A2
3
18
Y1
A3
4
17
Y2
A4
5
16
Y3
A5
6
15
Y4
A6
7
14
Y5
A7
8
13
Y6
A8
9
12
Y7
10
11
Y8
Y1
Y2
GND
Y3
Y4
FUNCTION TABLE
NONINVERTING
OUTPUTS
Y5
Y6
Y7
Y8
Inputs
Output Y
OE1
OE2
A
L
L
H
X
L
L
X
H
L
H
X
X
L
H
Z
Z
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1
19
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 4 of this data sheet.
Figure 1. Logic Diagram
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 8
1
Publication Order Number:
MC74VHC541/D
MC74VHC541
MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Parameter
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage
Vin
DC Input Voltage
Vout
DC Output Voltage
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
VCC = 5.0V ±0.5V
Min
Max
Unit
2.0
5.5
V
0
5.5
V
0
VCC
V
−55
+125
_C
0
0
100
20
ns/V
VCC = 3.3V ±0.3V
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
1.50
VCC x 0.7
VIH
Minimum High−Level Input
Voltage
2.0
3.0 to 5.5
VIL
Maximum Low−Level Input
Voltage
2.0
3.0 to 5.5
VOH
Minimum High−Level Output
Voltage
VOL
Maximum Low−Level Output
Voltage
TA = 25°C
VCC
V
Typ
TA = − 55 to 125°C
Max
Min
0.50
VCC x 0.3
Vin = VIH or VIL
IOH = − 50mA
2.0
3.0
4.5
1.9
2.9
4.4
Vin = VIH or VIL
IOH = − 4mA
IOH = − 8mA
3.0
4.5
2.58
3.94
Vin = VIH or VIL
IOL = 50mA
2.0
3.0
4.5
Vin = VIH or VIL
IOL = 4mA
IOL = 8mA
Max
1.50
VCC x 0.7
2.0
3.0
4.5
Unit
V
0.50
VCC x 0.3
V
V
1.9
2.9
4.4
2.48
3.80
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
V
Iin
Maximum Input Leakage
Current
Vin = 5.5V or GND
0 to 5.5
± 0.1
± 1.0
mA
IOZ
Maximum 3−State Leakage
Current
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.25
± 2.5
mA
ICC
Maximum Quiescent Supply
Current
Vin = VCC or GND
5.5
4.0
40.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MC74VHC541
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
tOSLH,
tOSHL
Parameter
Maximum Propagation Delay,
A to Y
Output Enable TIme,
OE to Y
Output Disable Time,
OE to Y
Output to Output Skew
Min
Test Conditions
TA = − 55 to 125°C
Typ
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
5.0
7.5
7.0
10.5
1.0
1.0
8.5
12.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
3.5
5.0
5.0
7.0
1.0
1.0
6.0
8.0
VCC = 3.3 ± 0.3V
RL = 1kW
CL = 15pF
CL = 50pF
6.8
9.3
10.5
14.0
1.0
1.0
12.5
16.0
VCC = 5.0 ± 0.5V
RL = 1kW
CL = 15pF
CL = 50pF
4.7
6.2
7.2
9.2
1.0
1.0
8.5
10.5
VCC = 3.3 ± 0.3V
RL = 1kW
CL = 50pF
11.2
15.4
1.0
17.5
VCC = 5.0 ± 0.5V
RL = 1kW
CL = 50pF
6.0
8.8
1.0
10.0
VCC = 3.3 ± 0.3V
(Note 1)
CL = 50pF
1.5
1.5
ns
VCC = 5.0 ± 0.5V
(Note 1)
CL = 50pF
1.0
1.0
ns
10
10
pF
Cin
Maximum Input Capacitance
4
Cout
Maximum Three−State Output
Capacitance (Output in High
Impedance State)
6
ns
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD
18
Power Dissipation Capacitance (Note 2)
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per bit). CPD is used to determine the no−load
dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
TA = 25°C
Symbol
Parameter
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.9
1.2
V
VOLV
Quiet Output Minimum Dynamic VOL
− 0.9
− 1.2
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
SWITCHING WAVEFORMS
VCC
VCC
OE1 or OE2
50%
50%
GND
A
50%
tPZL
tPLZ
HIGH
IMPEDANCE
GND
tPLH
tPHL
Y
50% VCC
VOL +0.3V
Y
tPZH
50% VCC
tPHZ
VOH -0.3V
Y
Figure 2.
50% VCC
Figure 3.
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3
HIGH
IMPEDANCE
MC74VHC541
TEST CIRCUITS
TEST
POINT
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1kW
CL*
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 4.
Figure 5.
INPUT
Figure 6. Input Equivalent Circuit
ORDERING INFORMATION
Package
Shipping†
SOIC−20WB
(Pb−Free)
1000 / Tape & Reel
MC74VHC541DTG
TSSOP−20
(Pb−Free)
75 Units / Rail
MC74VHC541DTR2G
TSSOP−20
(Pb−Free)
2500 / Tape & Reel
Device
MC74VHC541DWR2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
SOIC−20WB
20
TSSOP−20
20
VHC
541
ALYWG
G
VHC541
AWLYYWWG
1
1
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4
A
= Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−20 WB
CASE 751D−05
ISSUE H
DATE 22 APR 2015
SCALE 1:1
A
20
q
X 45 _
M
E
h
0.25
H
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
11
B
M
D
1
10
20X
B
b
0.25
M
T A
S
B
DIM
A
A1
b
c
D
E
e
H
h
L
q
S
L
A
18X
e
SEATING
PLANE
A1
c
T
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
20
20X
20X
1.30
0.52
20
XXXXXXXXXXX
XXXXXXXXXXX
AWLYYWWG
11
1
11.00
1
XXXXX
A
WL
YY
WW
G
10
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
98ASB42343B
SOIC−20 WB
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−20 WB
CASE 948E
ISSUE D
DATE 17 FEB 2016
SCALE 2:1
20X
0.15 (0.006) T U
2X
L
K REF
0.10 (0.004)
S
L/2
20
M
T U
S
V
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
K
K1
S
J J1
11
B
SECTION N−N
−U−
PIN 1
IDENT
0.25 (0.010)
N
1
10
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
G
D
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
--1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
--0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT
7.06
XXXX
XXXX
ALYWG
G
1
0.65
PITCH
16X
0.36
16X
1.26
DOCUMENT NUMBER:
98ASH70169A
DESCRIPTION:
TSSOP−20 WB
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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