MC74VHCT14A
Hex Schmitt Inverter
The MC74VHCT14A is an advanced high speed CMOS Schmitt
inverter fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
Pin configuration and function are the same as the
MC74VHCT04A, but the inputs have hysteresis and, with its Schmitt
trigger function, the VHCT14A can be used as a line receiver which
will receive slow input signals.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because it
has full 5.0 V CMOS level output swings.
The VHCT14A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 5.5 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: 60 FETs or 15 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2015
August, 2017 − Rev. 8
1
www.onsemi.com
MARKING
DIAGRAMS
14
SOIC−14
D SUFFIX
CASE 751A
1
VHCT14AG
AWLYWW
1
14
VHCT
14A
ALYWG
G
TSSOP−14
DT SUFFIX
CASE 948G
1
1
A
= Assembly Location
WL, L = Wafer Lot
Y, YY = Year
WW, W = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
FUNCTION TABLE
Inputs
Outputs
A
Y
L
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
MC74VHCT14A/D
MC74VHCT14A
A1
A2
A3
1
2
3
4
5
6
9
8
11
10
Y1
Y2
Y3
VCC
A6
Y6
A5
Y5
A4
Y4
14
13
12
11
10
9
8
1
2
3
4
5
6
7
A1
Y1
A2
Y2
A3
Y3
GND
Y=A
A4
A5
A6
13
12
Y4
Y5
Y6
Pinout: 14−Lead Packages (Top View)
Figure 1. Logic Diagram
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
DC Supply Voltage
VCC
−0.5 to +7.0
V
DC Input Voltage
VIN
−0.5 to +7.0
V
VOUT
−0.5 to VCC +0.5 V
V
VOUT
−0.5 to 7.0
V
DC Output Voltage
Output in HIGH or LOW State (Note 1)
VCC = 0 V
DC Input Diode Current
IIK
−20
mA
DC Output Diode Current
IOK
$20
mA
DC Output Source/Sink Current
IO
$25
mA
DC Supply Current per Supply Pin
ICC
$50
mA
DC Ground Current per Ground Pin
IGND
$50
mA
Storage Temperature Range
TSTG
−65 to +150
°C
Lead Temperature, 1 mm from Case for 10 Seconds
TL
260
°C
Junction Temperature under Bias
TJ
+150
°C
Thermal Resistance
SOIC
TSSOP
qJA
125
170
°C/W
Power Dissipation in Still Air
SOIC
TSSOP
PD
500
450
mW
VESD
>2000
>200
2000
V
ILatchup
$300
mA
ESD Withstand Voltage
Latchup Performance
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above VCC and Below GND at 85°C (Note 5)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IO absolute maximum rating must be observed.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
www.onsemi.com
2
MC74VHCT14A
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
VCC
4.5
5.5
V
Input Voltage
VI
0
5.5
V
Output Voltage (Note 6)
VO
0
VCC
V
VCC = 0 V
VO
0
5.5
V
Operating Free−Air Temperature
TA
−55
+125
°C
Supply Voltage
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. IO absolute maximum rating must be observed.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
VCC
V
Symbol
TA = 25°C
Min
Typ
Positive Threshold Voltage
VT+
4.5
5.5
Negative Threshold Voltage
VT−
4.5
5.5
0.5
0.6
Hysteresis Voltage
VH
4.5
5.5
0.40
0.40
VOH
4.5
4.4
5.5
3.94
Minimum High−Level Output Voltage
IOH = −50 mA
VIN = VIH or VIL
IOH = −50 mA
IOH = −8.0 mA
Maximum Low−Level Output Voltage
VIN = VIH or VIL
IOL = 50 mA
VOL
4.5
IOL = 8.0 mA
Max
TA ≤ 85°C
TA ≤ 125°C
Min
Min
Max
1.9
2.1
1.9
2.1
0.5
0.6
1.40
1.50
4.5
0.40
0.40
Unit
1.9
2.1
V
0.5
0.6
1.40
1.50
4.4
0.40
0.40
V
1.40
1.50
4.4
3.80
0.0
Max
V
V
3.66
0.1
0.1
0.1
V
5.5
0.36
0.44
0.52
Maximum Input Leakage Current
VIN = 5.5 V or GND
IIN
0 to 5.5
±0.1
±1.0
±1.0
Maximum Quiescent Supply Current
VIN = VCC or GND
ICC
5.5
2.0
20
40
mA
Quiescent Supply Current
Input: VIN = 3.4 V
ICCT
5.5
1.35
1.50
1.65
mA
Output Leakage Current
VOUT = 5.5 V
IOFF
0.0
0.5
5.0
10
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
TA = 25°C
Parameter
Maximum Propagation Delay, A to Y
Test Conditions
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
TA ≤ 125°C
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
5.5
7.0
7.6
9.6
1.0
1.0
9.0
11.0
1.0
1.0
11.5
13.5
CIN
2.0
10
Symbol
Min
TA ≤ 85°C
Unit
ns
Maximum Input Capacitance
Power Dissipation Capacitance
(Note 7)
10
10
pF
Typical @ 25°C, VCC = 5.0 V
11
CPD
pF
7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 6 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
TA = 25°C
Characteristic
Symbol
Typ
Max
Unit
Quiet Output Maximum Dynamic VOL
VOLP
0.8
1.0
V
Quiet Output Minimum Dynamic VOL
VOLV
−0.8
−1.0
V
Minimum High Level Dynamic Input Voltage
VIHD
2.0
V
Maximum Low Level Dynamic Input Voltage
VILD
0.8
V
www.onsemi.com
3
MC74VHCT14A
TEST POINT
3.0V
A
OUTPUT
1.5V
DEVICE
UNDER
TEST
GND
tPLH
tPHL
CL*
VOH
Y
1.5V
VOL
*Includes all probe and jig capacitance
Figure 2. Switching Waveforms
Figure 3. Test Circuit
(a) A Schmitt-Trigger Squares Up Inputs With Slow Rise and Fall Times
(b) A Schmitt-Trigger Offers Maximum Noise Immunity
VCC
VH
VT+
VT-
Vin
VCC
VH
VT+
VT-
Vin
GND
GND
VOH
VOH
Vout
Vout
VOL
VOL
Figure 4. Typical Schmitt−Trigger Applications
ORDERING INFORMATION
Device
MC74VHCT14ADR2G
NLV74VHCT14DR2G*
Package
Shipping†
SOIC−14
(Pb−Free)
2500 / Tape & Reel
MC74VHCT14ADTR2G
NLV74VHCT14ADTR2G*
TSSOP−14
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE L
14
1
SCALE 1:1
D
DATE 03 FEB 2016
A
B
14
8
A3
E
H
L
1
0.25
B
M
DETAIL A
7
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
14
14X
1.18
XXXXXXXXXG
AWLYWW
1
1
1.27
PITCH
XXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−14
CASE 751A−03
ISSUE L
DATE 03 FEB 2016
STYLE 1:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 2:
CANCELLED
STYLE 3:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON CATHODE
STYLE 4:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 5:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 6:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 7:
PIN 1. ANODE/CATHODE
2. COMMON ANODE
3. COMMON CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. ANODE/CATHODE
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. COMMON CATHODE
12. COMMON ANODE
13. ANODE/CATHODE
14. ANODE/CATHODE
STYLE 8:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−14 WB
CASE 948G
ISSUE C
14
DATE 17 FEB 2016
1
SCALE 2:1
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
DETAIL E
K
A
−V−
K1
J J1
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
G
D
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
GENERIC
MARKING DIAGRAM*
14
SOLDERING FOOTPRINT
XXXX
XXXX
ALYWG
G
7.06
1
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
98ASH70246A
DESCRIPTION:
TSSOP−14 WB
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative