MC74VHCT244ADWRG

MC74VHCT244A Octal Bus Buffer/Line Driver with 3-State Outputs The MC74VHCT244A is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHCT244A is a noninverting 3−state buffer, and has two active−low output enables. This device is designed to be used with 3−state memory address drivers, etc. The VHCT inputs are compatible with TTL levels. This device can be used as a level converter for interfacing 3.3 V to 5.0 V, because it has full 5.0 V CMOS level output swings. The VHCT244A input and output (when disabled) structures provide protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. These input and output structures help prevent device destruction caused by supply voltage−input/ output voltage mismatch, battery backup, hot insertion, etc. http://onsemi.com MARKING DIAGRAMS 20 1 SOIC−20WB SUFFIX DW CASE 751D • • • High Speed: tPD = 5.6 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V Power Down Protection Provided on Inputs and Outputs Balanced Propagation Delays Designed for 4.5 V to 5.5 V Operating Range Low Noise: VOLP = 1.1 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V Chip Complexity: 112 FETs or 28 Equivalent Gates NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 9 1 20 Features • • • • • • • • • • VHCT244A AWLYYWWG 1 1 TSSOP−20 SUFFIX DT CASE 948E VHCT 244A ALYWG G 1 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MC74VHCT244A/D MC74VHCT244A A1 A2 A3 A4 DATA INPUTS B1 B2 B3 B4 2 18 4 16 6 14 8 12 11 9 13 7 15 5 17 3 YA1 YA2 YA3 YA4 YB1 NONINVERTING OUTPUTS YB2 YB3 YB4 1 OEA 19 OEB OUTPUT ENABLES Figure 1. Logic Diagram FUNCTION TABLE OEA 1 20 VCC A1 2 19 OEB YB4 3 18 YA1 OEA, OEB A, B YA, YB A2 4 17 B4 YB3 5 16 YA2 L L H LL HH XZ LL HH ZZ A3 6 15 B3 YB2 7 14 YA3 A4 8 13 B2 YB1 9 12 YA4 GND 10 11 B1 Inputs Figure 2. Pin Assignment http://onsemi.com 2 Outputs MC74VHCT244A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage –0.5 to +7.0 V Vin DC Input Voltage –0.5 to +7.0 V Vout DC Output Voltage –0.5 to +7.0 –0.5 to VCC + 0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current (VOUT < GND; VOUT > VCC) ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±75 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature –65 to +150 °C Output in 3−State High or Low State SOIC Packages† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †Derating − SOIC Packages: – 7 mW/°C from 65° to 125°C TSSOP Package: − 6.1 mW/°C from 65° to 125°C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC DC Supply Voltage Vin DC Input Voltage Vout DC Output Voltage TA Operating Temperature tr, tf Input Rise and Fall Time Output in 3−State High or Low State VCC = 5.0 V ± 0.5 V Min Max Unit 4.5 5.5 V 0 5.5 V 0 0 5.5 VCC V −40 +125 °C 0 20 ns/V DC ELECTRICAL CHARACTERISTICS TA = 25°C Min Symbol Parameter VIH Minimum High−Level Input Voltage 4.5 to 5.5 VIL Maximum Low−Level Input Voltage 4.5 to 5.5 VOH Minimum High−Level Output Voltage Vin = VIH or VIL IOH = −50 mA 4.5 4.4 IOH = −8 mA 4.5 3.94 Maximum Low−Level Output Voltage Vin = VIH or VIL IOL = 50 mA 4.5 IOL = 8 mA VOL Test Conditions VCC V Typ TA = − 40 to 85°C Max 2.0 Min Max 2.0 0.8 4.5 0.0 TA = 85 to 125°C Min Max 2.0 0.8 V 0.8 4.4 4.4 3.80 3.66 Unit V V 0.1 0.1 0.1 4.5 0.36 0.44 0.52 V Iin Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA IOZ Maximum 3−State Leakage Current Vin = VIL or VIH Vout = VCC or GND 5.5 ±0.25 ±2.5 2.5 mA ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 4.0 40.0 40.0 mA ICCT Quiescent Supply Current Per Input: VIN =3.4 V Other Input: VCC or GND 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0 0.5 5.0 10 mA http://onsemi.com 3 MC74VHCT244A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Symbol Parameter Min Test Conditions TA = − 40 to 85°C TA = 85 to 125°C Typ Max Min Max Min Max Unit tPLH, tPHL Maximum Propagation Delay A to YA or B to YB VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 5.4 5.9 7.4 8.4 1.0 1.0 8.5 9.5 11.0 1.0 9.5 10.5 ns tPZL, tPZH Output Enable Time OEA to YA or OEB to YB VCC = 5.0 ± 0.5 V CL = 15 pF RL = 1 kW CL = 50 pF 7.7 8.2 10.4 11.4 1.0 1.0 12.0 13.0 1.0 1.0 13.5 14.5 ns tPLZ, tPHZ Output Disable Time OEA to YA or OEB to YB VCC = 5.0 ± 0.5 V CL = 50 pF RL = 1 kW 8.8 11.4 1.0 13.0 1.0 14.5 ns Output to Output Skew VCC = 5.0 ± 0.5 V CL = 50 pF (Note 1) 1.0 ns tOSLH, tOSHL 1.0 1.0 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Typical @ 25°C, VCC = 5.0 V Symbol Min Parameter Typ Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CPD Power Dissipation Capacitance (Note 2) 18 Cin Maximum Input Capacitance 4 Cout Maximum Three−State Output Capacitance (Output in High−Impedance State) 9 pF 10 pF pF 1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 8 (per bit). CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V) TA = 25°C Symbol Parameter Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.9 1.1 V VOLV Quiet Output Minimum Dynamic VOL −0.9 −1.1 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V ORDERING INFORMATION Device MC74VHCT244ADWRG Package Shipping† SOIC−20WB (Pb−Free) 1000 / Tape & Reel MC74VHCT244ADTG MC74VHCT244ADTRG 75 Units / Rail TSSOP−20 (Pb−Free) NLV74VHCT244ADTRG* 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. http://onsemi.com 4 MC74VHCT244A 3V A or B 1.5 V GND tPHL tPLH YA or YB VOH 1.5 V VOL Figure 3. Switching Waveform 3V OEA or OEB 1.5 V tPZL YA or YB HIGH IMPEDANCE 1.5 V tPZH YA or YB GND tPLZ VOL +0.3 V tPHZ VOH -0.3 V 1.5 V HIGH IMPEDANCE Figure 4. Switching Waveform TEST POINT OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance Figure 5. Test Circuit TEST POINT OUTPUT DEVICE UNDER TEST 1 kW CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 6. Test Circuit http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−20 WB CASE 751D−05 ISSUE H DATE 22 APR 2015 SCALE 1:1 A 20 q X 45 _ M E h 0.25 H NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 B M D 1 10 20X B b 0.25 M T A S B DIM A A1 b c D E e H h L q S L A 18X e SEATING PLANE A1 c T GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 20 20X 20X 1.30 0.52 20 XXXXXXXXXXX XXXXXXXXXXX AWLYYWWG 11 1 11.00 1 XXXXX A WL YY WW G 10 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ 98ASB42343B SOIC−20 WB = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−20 WB CASE 948E ISSUE D DATE 17 FEB 2016 SCALE 2:1 20X 0.15 (0.006) T U 2X L K REF 0.10 (0.004) S L/2 20 M T U S V ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ K K1 S J J1 11 B SECTION N−N −U− PIN 1 IDENT 0.25 (0.010) N 1 10 M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C G D H DETAIL E 0.100 (0.004) −T− SEATING PLANE DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 7.06 XXXX XXXX ALYWG G 1 0.65 PITCH 16X 0.36 16X 1.26 DOCUMENT NUMBER: 98ASH70169A DESCRIPTION: TSSOP−20 WB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DIMENSIONS: MILLIMETERS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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