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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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MCH3333A
MOSFET – Power, Single P-Channel
-30 V, 215 mΩ, -2.0 A
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• Low On-Resistance
• 1.8V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
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VDSS
RDS(on) Max
215mΩ@ -4V
-30V
280mΩ@ -2.5V
ELECTRICAL CONNECTION
P-Channel
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Symbol
3
Value
Unit
Drain to Source Voltage
VDSS
-30
V
Gate to Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
-2.0
A
Drain Current (Pulse)
PW £ 10µs, duty cycle £ 1%
IDP
-8.0
A
Power Dissipation
When mounted on ceramic substrate
(1000mm2 ´ 0.8mm)
PD
0.9
W
Junction Temperature
Tj
150
°C
THERMAL RESISTANCE RATINGS
Junction to Ambient
When mounted on ceramic substrate
(1000mm2 ´ 0.8mm)
© Semiconductor Components Industries, LLC, 2015
May 2019 - Rev. 1
1
1 : Gate
2 : Source
3 : Drain
2
Storage Temperature
Tstg
-55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Parameter
-2A
430mΩ@ -1.8V
Typical Applications
• Load Switch
Parameter
ID Max
Symbol
RqJA
Value
138.8
1
Unit
PACKING TYPE : TL
MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
°C/W
Publication Order Number:
MCH3333A/D
MCH3333A
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
ID=-1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=-30V, VGS=0V
-1
µA
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
µA
Gate Threshold Voltage
VGS(th)
VDS=-10V, ID=-1mA
-1.3
V
Forward Transconductance
gFS
VDS=-10V, ID=-1.0A
2.5
RDS(on)1
ID=-1.0A, VGS=-4V
165
215
mW
RDS(on)2
ID=-0.5A, VGS=-2.5V
200
280
mW
RDS(on)3
ID=-0.2A, VGS=-1.8V
270
430
mW
Static Drain to Source On-State
Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Conditions
Value
Parameter
min
typ
max
-30
Unit
V
-0.4
S
240
pF
39
pF
Crss
31
pF
Turn-ON Delay Time
td(on)
5.7
ns
Rise Time
tr
9.7
ns
Turn-OFF Delay Time
td(off)
27
ns
16
ns
2.8
nC
0.3
nC
0.95
nC
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
VDS=-10V, f=1MHz
See specified Test Circuit
VDS=-15V, VGS=-4V, ID=-2.0A
VSD
Forward Diode Voltage
IS=-2.0A, VGS=0V
-0.87
-1.5
V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise
noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VDD= --15V
VIN
0V
--4V
ID= --1.0A
RL=15W
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
MCH3333A
P.G
50W
S
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2
MCH3333A
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3
MCH3333A
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4
MCH3333A
PACKAGE DIMENSIONS
unit : mm
Recommended
Soldering Footprint
0.6
0.4
1 : Gate
2 : Source
2.1
3 : Drain
0.65 0.65
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
QU
SC-70FL / MCPH3
(Pb-Free / Halogen Free)
3,000 / Tape & Reel
MCH3333A-TL-H
MCH3333A-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the MCH3333A is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
www.onsemi.com
5
