MCH3421-TL-E

MCH3421 MCH3421 Ordering number : ENN7997 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 100 V ±20 V ID 0.8 A 3.2 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 0.9 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Symbol Conditions V(BR)DSS IDSS Ratings min typ ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±16V, VDS=0 100 VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=400mA 0.5 ID=400mA, VGS=10V RDS(on)2 Ciss IGSS VGS(off) Unit max V 1 µA ±10 µA 2.6 V 0.68 0.89 Ω ID=400mA, VGS=4V 0.85 1.2 VDS=20V, f=1MHz 165 13 pF 8.0 pF 1.0 S Ω pF Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns tr See specified Test Circuit. 3 ns Rise Time Turn-OFF Delay Time Fall Time td(off) See specified Test Circuit. 22 ns tf See specified Test Circuit. 10 ns Marking : KW © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: MCH3421/D MCH3421 Continued from preceding page. Parameter Symbol Ratings Conditions min Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=0.8A VDS=50V, VGS=10V, ID=0.8A VDS=50V, VGS=10V, ID=0.8A Diode Forward Voltage VSD IS=0.8A, VGS=0 typ 4.8 nC 0.9 nC 0.9 1.2 VDD=50V VIN 10V 0V 0.15 3 ID=0.4A RL=125Ω 1.6 D 0.25 2 1 VOUT PW=10µs D.C.≤1% 0.07 2.1 VIN 0.65 V Switching Time Test Circuit 0.3 0.25 nC 0.86 Package Dimensions unit : mm 2167A Unit max G 2.0 3 MCH3421 P.G 0.85 1 : Gate 2 : Source 3 : Drain 2 SANYO : MCPH3 (Top view) ID -- VDS ID -- VGS 2.0 VDS=10V V 6.0 1.8 0.4 1.2 1.0 0.8 0.6 Ta= 2 0.4 0.2 °C 0.6 1.4 5°C Drain Current, ID -- A VGS=3.0V V 4.0 V 10. 5.0 1.6 3.5 Drain Current, ID -- A 0.8 V 0V 8.0 V 1.0 S 75°C 1 50Ω --25 (Bottom view) 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 1.0 1.5 20 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V 4.0 IT05996 RDS(on) -- Ta 1.8 Ta=25°C ID=0.4A 1.8 0.5 IT05995 RDS(on) -- VGS 2.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 1.6 1.6 1.4 1.2 V 4 S= 1.0 VG A, .4 =0 ID 0.8 0.4 I D= 0.6 V 10 S= , VG A 0.4 0.2 0 --60 IT05997 Rev.0 I Page 2 of 4 I www.onsemi.com --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT05998 MCH3421 yfs -- ID 5 VGS=0 3 2 2 = Ta 5 --2 °C °C 75 1.0 °C 25 7 5 3 1.0 7 5 3 2 Ta= 75°C 25° C --25 °C 3 0.1 7 5 2 3 0.1 0.01 0.01 0.2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 0.8 1.0 1.2 IT06000 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 Ciss 2 3 td(off) 2 tf 10 7 td(on) 5 tr 3 100 7 5 Ciss, Coss, Crss -- pF 5 0.6 Diode Forward Voltage, VSD -- V VDD=50V VGS=10V 7 0.4 IT05999 SW Time -- ID 100 Switching Time, SW Time -- ns IF -- VSD 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 7 3 2 Coss 10 7 5 Crss 3 2 2 1.0 0.1 1.0 2 3 5 7 1.0 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 VDS=50V ID=0.8A 6 4 2 0 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 5 1.0 7 5 3 2 DC 0.1 7 5 3 2 0.01 7 5 3 2 on ac bo ar 0.4 d 0.001 0.1 2 IT06003 (9 00 m m2 ✕ 0. 8m 0.2 m ) 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 10 0m s tio n( Ta =2 5° C) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) am ic op Operation in this area is limited by RDS(on). er 0.6 30 IT06002 era nt ed 25