MCH3474-TL-H

MCH3474 Power MOSFET 30V, 50mΩ, 4A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • High Speed Switching • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS 30V RDS(on) Max 50mΩ@ 4.5V ID Max 72mΩ@ 2.5V 4A 130mΩ@ 1.8V ELECTRICAL CONNECTION N-Channel Typical Applications • DC/DC Converter SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit VDSS 30 Gate to Source Voltage VGSS ±12 V V Drain Current (DC) ID 4 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 16 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD Junction Temperature Tj PACKING TYPE : TL W 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter Symbol Value RθJA © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 1 FF TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) LOT No. 1 MARKING LOT No. Drain to Source Voltage Unit 125 1 °C/W Publication Order Number : MCH3474/D MCH3474 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V 30 VDS=10V, ID=1mA 0.4 VDS=10V, ID=2A 2.0 typ max Unit V 1 μA ±10 μA 1.3 V 3.4 S RDS(on)1 RDS(on)2 ID=2A, VGS=4.5V 38 50 mΩ ID=1A, VGS=2.5V 51 72 mΩ RDS(on)3 Ciss ID=0.5A, VGS=1.8V 80 130 mΩ Output Capacitance Coss VDS=10V, f=1MHz 59 pF Reverse Transfer Capacitance Crss 38 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 41 ns Turn-OFF Delay Time td(off) 36 ns Fall Time tf 37 ns 4.7 nC Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 430 See specified Test Circuit VDS=15V, VGS=4.5V, ID=4A pF 0.8 nC 1.1 nC VSD Forward Diode Voltage IS=4A, VGS=0V 0.82 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=15V 4.5V 0V VIN PW=10μs D.C.≤1% ID=2A RL=7.5Ω VIN VOUT D G P.G 50Ω S MCH3474 www.onsemi.com 2 MCH3474 www.onsemi.com 3 MCH3474 www.onsemi.com 4 MCH3474 PACKAGE DIMENSIONS unit : mm SC-70FL / MCPH3 CASE 419AQ ISSUE O Recommended Soldering Footprint 0.6 0.4 1 : Gate 2 : Source 2.1 3 : Drain 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) FF SC-70FL / MCPH3 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH3474-TL-H MCH3474-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3474 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5